US4721631A
Expired / Lapsed
US
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Method of manufacturing thin-film electroluminescent display panel
Assignee: Sharp Corp
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Filing: 1987-03-09
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Granted: 1988-01-26
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Expires: 2007-03-09
Abstract
Abstract According to a method of this invention for manufacturing a thin-film electroluminescent display panel of the type having a pair of electrodes sandwiching a three-layer structure composed of a layer covered with dielectric layers on both sides, a silicon nitride or silicon oxynitride film is formed on a layer comprising ZnS by a plasma chemical vapor deposition method with a mixture of silicon and nitrogen gases or of silicon, nitrogen and N 2 O gases. Alternatively, this film may be formed in a double-layer structure, the second layer being formed with a mixture of silicon and ammonia gases or of silicon, ammonia and N 2 O gases. A dielectric layer thus formed by a method embodying this invention can satisfactorily cover the protrusions and impurities in the layer underneath and thin-film electroluminescent elements manufactured by this method have superior brightness characteristics.
Inventors
- 👤 Yoshihiro Endo
- 👤 Takuo Yamashita
- 👤 Ikuo Ogawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:10
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/22; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/305; C23C16/34; C23C16/345; H05B33/10
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
71 words
In a method of manufacturing a thin-film electroluminescent display panel which comprises a structure including a luminescent layer with characteristics of electroluminescence in response to an applied electric field and dielectric layers covering said luminescent layer and a pair of electrodes sandwiching said structure, step of forming a silicon nitride film over a luminescent layer by a plasma chemical vapor deposition method with an ammonium-free mixture of silane and nitrogen gases.
Claim 2
Dependent Claim
71 words
In a method of manufacturing a thin-film electroluminescent display panel which comprises a structure including a luminescent layer with characteristics of electroluminescence in response to an applied electric field and dielectric layers covering said luminescent layer and a pair of electrodes sandwiching said structure, step of forming a silicon nitride film over a luminescent layer by a plasma chemical vapor deposition method with an ammonium-free mixture of silane and nitrogen gases.
Claim 3
Dependent Claim
17 words
The method of claim 1 further comprising step of forming aluminum electrodes on said silicon nitride film.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein said luminescent layer is made of an ZnS material doped with an active substance.
Claim 5
Dependent Claim
74 words
In a method of manufacturing a thin-film electroluminescent display panel which comprises a structure including a luminescent layer with characteristics of electroluminescence in response to an applied electric field and dielectric layers covering said luminescent layer and a pair of electrodes sandwiching said structure, step of forming a silicon oxynitride film over a luminescent layer by a plasma chemical vapor deposition method with an ammonium-free mixture of silane, nitrogen and N 2 O gases.
Claim 6
Dependent Claim
74 words
In a method of manufacturing a thin-film electroluminescent display panel which comprises a structure including a luminescent layer with characteristics of electroluminescence in response to an applied electric field and dielectric layers covering said luminescent layer and a pair of electrodes sandwiching said structure, step of forming a silicon oxynitride film over a luminescent layer by a plasma chemical vapor deposition method with an ammonium-free mixture of silane, nitrogen and N 2 O gases.
Claim 7
Dependent Claim
17 words
The method of claim 4 further comprising step of forming aluminum electrodes on said silicon oxynitride layer.
Claim 8
Dependent Claim
20 words
The method of claim 4 wherein said luminescent layer is made of a ZnS material doped with an active substance.
Claim 9
Dependent Claim
100 words
In a method of manufacturing a thin-film electroluminescent display panel which comprises a structure including a luminescent layer with characteristics of electroluminescence in response to an applied electric field and dielectric layers covering said luminescent layer and a pair of electrodes sandwiching said structure, steps of forming a first silicon nitride film by a plasma chemical vapor deposition method with an ammonium-free mixture of silane and nitrogen gases over a luminescent layer and forming a second silicon nitride film by a plasma chemical vapor deposition method with a mixture of silane and ammonia gases over said first silicon nitride film.
Claim 10
Dependent Claim
100 words
In a method of manufacturing a thin-film electroluminescent display panel which comprises a structure including a luminescent layer with characteristics of electroluminescence in response to an applied electric field and dielectric layers covering said luminescent layer and a pair of electrodes sandwiching said structure, steps of forming a first silicon nitride film by a plasma chemical vapor deposition method with an ammonium-free mixture of silane and nitrogen gases over a luminescent layer and forming a second silicon nitride film by a plasma chemical vapor deposition method with a mixture of silane and ammonia gases over said first silicon nitride film.
Claim 11
Dependent Claim
33 words
The method of claim 7 wherein said first silicon nitride film is about 100-800 A in tickness and the total thickness of said first and second silicon nitride films is about 1500-3000 A.
Claim 12
Dependent Claim
19 words
The method of claim 7 further comprising the step of forming aluminum electrodes on said second silicon nitride film.
Claim 13
Dependent Claim
26 words
The method of claim 7 wherein said first and second silicon nitride films are formed at temperature about 100°-300° C. and gas pressure about 0.2-2.0 torr.
Claim 14
Dependent Claim
20 words
The method of claim 7 wherein said luminescent layer is made of a ZnS material doped with an active substance.
Claim 15
Dependent Claim
105 words
In a method of manufacturing a thin-film electroluminescent display panel which comprises a structure including a luminescent layer with characteristics of electroluminescence in response to an applied electric field and dielectric layers covering said luminescent layer and a pair of electrodes sandwiching said structure, steps of forming a first silicone oxynitride film by a plasma chemical vapor deposition method with a mixture of silane, nitrogen and N 2 O gases over a luminescent layer and forming a second silicone oxynitride film by a plasma chemical vapor deposition method with a mixture of silane, ammonia and N 2 O gases over said first silicone oxynitride film.
Claim 16
Dependent Claim
105 words
In a method of manufacturing a thin-film electroluminescent display panel which comprises a structure including a luminescent layer with characteristics of electroluminescence in response to an applied electric field and dielectric layers covering said luminescent layer and a pair of electrodes sandwiching said structure, steps of forming a first silicone oxynitride film by a plasma chemical vapor deposition method with a mixture of silane, nitrogen and N 2 O gases over a luminescent layer and forming a second silicone oxynitride film by a plasma chemical vapor deposition method with a mixture of silane, ammonia and N 2 O gases over said first silicone oxynitride film.
Claim 17
Dependent Claim
33 words
The method of claim 12 wherein said first silicon oxynitride film is about 100-800 A in thickness and the total thickness of said first and second silicon oxynitride films is about 1500-3000 A.
Claim 18
Dependent Claim
19 words
The method of claim 12 further comprising the step of forming aluminum electrodes on said second silicon oxynitride film.
Claim 19
Dependent Claim
26 words
The method of claim 12 wherein said first and second silicon oxynitride films are formed at temperature about 100°-300° C. and gas pressure about 0.2-2.0 torr.
Claim 20
Dependent Claim
20 words
The method of claim 12 wherein said luminescent layer is made of a ZnS material doped with an active substance.
Claim 21
Dependent Claim
19 words
The method of claim 1 wherein said ammonium-free mixture is exclusive of any hydrogen-containing compound except said silane gas.
Claim 22
Dependent Claim
19 words
The method of claim 4 wherein said ammonium-free mixture is exclusive of any hydrogen-containing compound except said silane gas.
Claim 23
Dependent Claim
19 words
The method of claim 7 wherein said ammonium-free mixture is exclusive of any hydrogen-containing compound except said silane gas.
Claim 24
Dependent Claim
19 words
The method of claim 12 wherein said ammonium-free mixture is exclusive of any hydrogen-containing compound except said silane gas.
References Cited (Backward Citations)
US4587171A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1991-01-25 | 1991-07-27 | 1992-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-25 | 1995-07-27 | 1996-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-25 | 1999-07-27 | 2000-01-26 | $7700.00 | Window Closed / Lapsed |