US5956595A
Expired / Lapsed
US
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Method of fabricating a semiconductor integrated circuit having a capacitor with lower electrode comprising titanium nitride
Assignee: Longitude Semiconductor SARL
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Filing: 1997-07-15
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Granted: 1999-09-21
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Expires: 2017-07-15
Abstract
Abstract In order to fabricate a semiconductor device having a stacked capacitor cell, a silicon substrate is first prepared. A lower capacitor electrode having a porous surface is then formed on the silicon substrate. Following this, the lower capacitor electrode is selectively covered with a titanium nitride film. Further, a dielectric film of a material, exhibiting high permittivity or feroelectricity, is deposited on said titanium nitride film, and an upper capacitor electrode is deposited on the dielectric film.
Inventors
- 👤 Masanobu Zenke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:12
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/711; H10D1/712
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
103 words
A method of fabricating a semiconductor device, comprising the steps of: (a) preparing a substrate for an integrated circuit having a capacitor; (b) forming a lower capacitor electrode on said substrate, said lower capacitor electrode having a porous surface; (c) depositing a titanium nitride film on said lower capacitor electrode by depositing a titanium silicide film on said lower capacitor electrode and annealing said titanium silicide film in an atmosphere of nitrogen or ammonium; (d) depositing a dielectric film of a material, exhibiting high permittivity or feroelectricity, on said titanium nitride film; and (e) depositing an upper capacitor electrode on said dielectric film.
Claim 2
Independent Claim
103 words
A method of fabricating a semiconductor device, comprising the steps of: (a) preparing a substrate for an integrated circuit having a capacitor; (b) forming a lower capacitor electrode on said substrate, said lower capacitor electrode having a porous surface; (c) depositing a titanium nitride film on said lower capacitor electrode by depositing a titanium silicide film on said lower capacitor electrode and annealing said titanium silicide film in an atmosphere of nitrogen or ammonium; (d) depositing a dielectric film of a material, exhibiting high permittivity or feroelectricity, on said titanium nitride film; and (e) depositing an upper capacitor electrode on said dielectric film.
Claim 3
Dependent Claim
21 words
A method as claimed in claim 1, wherein said titanium silicide film is selectively deposited only on said lower capacitor electrode.
Claim 4
Independent Claim
109 words
A method of fabricating a semiconductor device comprising the steps of (a) preparing a substrate for an integrated circuit having a capacitor; (b) forming a lower capacitor electrode on said substrate said lower capacitor electrode having a porous surface; (c) depositing a titanium nitride film on said lower capacitor electrode by depositing a titanium film on said lower capacitor electrode and nitrogenizing a surface of said titanium film through annealing said titanium film in an atmosphere of nitrogen or ammonium; (d) depositing a dielectric film of a material exhibiting high permittivity or feroelectricity, on said titanium nitride film; and (e) depositing an upper capacitor electrode on said dielectric film.
Claim 5
Independent Claim
109 words
A method of fabricating a semiconductor device comprising the steps of (a) preparing a substrate for an integrated circuit having a capacitor; (b) forming a lower capacitor electrode on said substrate said lower capacitor electrode having a porous surface; (c) depositing a titanium nitride film on said lower capacitor electrode by depositing a titanium film on said lower capacitor electrode and nitrogenizing a surface of said titanium film through annealing said titanium film in an atmosphere of nitrogen or ammonium; (d) depositing a dielectric film of a material exhibiting high permittivity or feroelectricity, on said titanium nitride film; and (e) depositing an upper capacitor electrode on said dielectric film.
Claim 6
Dependent Claim
20 words
A method as claimed in claim 3, wherein said titanium film is selectively deposited only on said lower capacitor electrode.
Claim 7
Dependent Claim
23 words
A method as claimed in claim 1, further including, after step (e), annealing said dielectric film in an atmosphere of hydrogen or ozone.
Claim 8
Dependent Claim
19 words
A method as claimed in claim 1, wherein said dielectric film is made of Ta 2 O 5 .
Claim 9
Dependent Claim
23 words
A method as claimed in claim 3, further including, after step (e), annealing said dielectric film in an atmosphere of hydrogen or ozone.
Claim 10
Dependent Claim
19 words
A method as claimed in claim 3, wherein said dielectric film is made of Ta 2 O 5 .
References Cited (Backward Citations)
JPH0194645A
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JPH04101453A
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JPH05304273A
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US5110752A
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US5688724A
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JPH07202019A
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JPH07211796A
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JPH07335842A
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-09-20 | 2003-03-22 | 2003-09-21 | $2000.00 | Window Closed / Lapsed |
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