US4868005A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for photodeposition of films on surfaces
Assignee: Massachusetts Institute of Technology
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Filing: 1988-03-10
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Granted: 1989-09-19
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Expires: 2008-03-10
Abstract
Abstract The invention relates to visible-laser deposition reactions of metal containing oxyhalide and carbonyl vapors, such as, chromyl chloride vapor, CrO 2 Cl 2 , or cobalt carbonyl, Co 2 (CO) 8 , for direct writing of metal containing opaque patterns on various substrates (Si, SiO 2 , GaAs and glass). Deposition at low laser power is by photolysis of adsorbed reactant molecules. Higher powers initiate deposition photochemically and continue it with a combined photolytic/pyrolytic reaction, simultaneously inducing a solid-phase conversion of the deposited film. Mixed Cr 2 O 3 /CrO 2 or cobalt thin films of 1-nanometer to several-micrometer thickness, as well as 1-millimeter-long single crystals of Cr 2 O 3 or cobalt, can be grown with this process, the former at rates up to 3 μm/s. Thin chromium oxide films produced in this manner are strongly ferromagnetic.
Inventors
- 👤 Daniel J. Ehrlich
- 👤 Mordecai Rothschild
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:12
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/68; G03F1/72; C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/483; H; H01; H01F; H01F41/00; H01F41/14; H01F41/20; H01F41/32; H01F41/34
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
64 words
A method for a substantially photolytic photodepostion of cobalt film on a surface of a photomask substrate disposed in a reaction chamber comprising the steps of: (a) introducing gaseous Co 2 (CO) 8 at low vapor pressure into said chamber; (b) focusing a beam of coherent, visible light at or near the surface of said substrate to initiate deposition of cobalt on said surface.
Claim 2
Independent Claim
64 words
A method for a substantially photolytic photodepostion of cobalt film on a surface of a photomask substrate disposed in a reaction chamber comprising the steps of: (a) introducing gaseous Co 2 (CO) 8 at low vapor pressure into said chamber; (b) focusing a beam of coherent, visible light at or near the surface of said substrate to initiate deposition of cobalt on said surface.
Claim 3
Independent Claim
101 words
A method for deposition of metal containing films on a surface of a substrate disposed in a reaction chamber comprising the steps of: (a) introducing a gaseous metal oxyhalide vapor precursor into said chamber wherein the metal of the metal oxyhalide is selected from the group consisting of Tantalum (Ta), Niobium (Nb) and Vanadium (V); (b) generating a beam of visible light directed at or near the surface upon which deposition is desired; and (c) initiating deposition with said beam of visible light via a substantially photolytic dissociation of said precursor, resulting in formation of metallic material on said substrate surface.
Claim 4
Independent Claim
101 words
A method for deposition of metal containing films on a surface of a substrate disposed in a reaction chamber comprising the steps of: (a) introducing a gaseous metal oxyhalide vapor precursor into said chamber wherein the metal of the metal oxyhalide is selected from the group consisting of Tantalum (Ta), Niobium (Nb) and Vanadium (V); (b) generating a beam of visible light directed at or near the surface upon which deposition is desired; and (c) initiating deposition with said beam of visible light via a substantially photolytic dissociation of said precursor, resulting in formation of metallic material on said substrate surface.
Claim 5
Dependent Claim
11 words
The method of claim 2 wherein the precursor is VOClhd 3.
Claim 6
Independent Claim
79 words
A method for deposition of metal containing films on a surface of a substrate disposed in a reaction chamber comprising the steps of: (a) introducing a gaseous nitrosylcarbonyl vapor precursor into said chamber; (b) generating a beam of visible light directed at or near the surface upon which deposition is required; (c) initiating deposition with said beam of visible light via a substantially photolytic dissociation of said precursor resulting in formation of metal containing material on said substrate surface.
Claim 7
Independent Claim
79 words
A method for deposition of metal containing films on a surface of a substrate disposed in a reaction chamber comprising the steps of: (a) introducing a gaseous nitrosylcarbonyl vapor precursor into said chamber; (b) generating a beam of visible light directed at or near the surface upon which deposition is required; (c) initiating deposition with said beam of visible light via a substantially photolytic dissociation of said precursor resulting in formation of metal containing material on said substrate surface.
Claim 8
Dependent Claim
27 words
The method of claim 4 wherein the metal containing nitrosylcarbonyl vapor precursor is taken from the class comprising Co(CO) 3 NO and Fe(CO) 2 (NO) 2 .
Claim 9
Independent Claim
85 words
A method for deposition of metal films on a surface of a substrate disposed in a reaction chamber comprising the steps of: (a) introducing a visible absorbing gaseous metal precursor compound containing PF 3 groups into said reaction chamber; (b) generating a beam of visible light directed at or near the surface upon which deposition is required; (c) initiating deposition with said beam of visible light via a substantially photolytic dissociation of said precursor resulting in formation of metal containing material on said substrate surface.
Claim 10
Independent Claim
85 words
A method for deposition of metal films on a surface of a substrate disposed in a reaction chamber comprising the steps of: (a) introducing a visible absorbing gaseous metal precursor compound containing PF 3 groups into said reaction chamber; (b) generating a beam of visible light directed at or near the surface upon which deposition is required; (c) initiating deposition with said beam of visible light via a substantially photolytic dissociation of said precursor resulting in formation of metal containing material on said substrate surface.
Claim 11
Dependent Claim
14 words
The method of claim 6 wherein the precursor is Pt(PF 3 ) 4 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-18 | 1993-03-20 | 1993-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-18 | 1997-03-20 | 1997-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-18 | 2001-03-20 | 2001-09-19 | $7700.00 | Window Closed / Lapsed |