Patent US6208033B1 successfully refreshed from Google Patents.
US6208033B1
Expired / Lapsed
US
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Apparatus having titanium silicide and titanium formed by chemical vapor deposition
Assignee: Round Rock Research LLC
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Filing: 1999-08-19
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Granted: 2001-03-27
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Expires: 2019-08-19
Abstract
Abstract Apparatus having titanium silicide and titanium formed by chemical vapor deposition (CVD) in a contact. The chemical vapor deposition includes forming titanium silicide and/or titanium by combining a titanium precursor in the presence of hydrogen, H2. The chemical vapor deposition may further include forming titanium silicide and/or titanium by combining titanium tetrachloride, TiCl4, in the presence of hydrogen. The chemical vapor deposition may further include forming titanium silicide and/or by combining tetradimethyl amino titanium, Ti(N(CH3)2)4, in the presence of hydrogen. For production of titanium silicide, reaction of the titanium precursor may occur with a silicon precursor or a silicon source occurring as part of the contact. Use of a silicon precursor reduces depletion of a silicon base layer in the contact.
Inventors
- 👤 Trung T. Doan
- 👤 Gurtej Singh Sandhu
- 👤 Kirk Prall
- 👤 Sujit Sharan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:42
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0227; C23C16/0236; C23C16/22; C23C16/30; C23C16/42; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10W20/047; H10P14/43
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
137 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is produced by a method comprising forming titanium silicide by plasma-assisted chemical vapor deposition (CVD) in a CVD chamber according to a first chemical process described by TiCl 4 +Si n H 2n+2 +H 2 →TiS x +HCl, and a second chemical process described by TiCl 4 +Si+H 2 →TiSi x +HCl, wherein n is greater than or equal to 1, and x is less than or equal to 2; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 2
Dependent Claim
137 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is produced by a method comprising forming titanium silicide by plasma-assisted chemical vapor deposition (CVD) in a CVD chamber according to a first chemical process described by TiCl 4 +Si n H 2n+2 +H 2 →TiS x +HCl, and a second chemical process described by TiCl 4 +Si+H 2 →TiSi x +HCl, wherein n is greater than or equal to 1, and x is less than or equal to 2; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 3
Dependent Claim
139 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide formed on an exposed silicon base layer, wherein the titanium suicide is produced by a method comprising forming titanium silicide in a chemical vapor deposition chamber according to a first chemical process described by TiCl 4 +Si n H 2n+2 +H 2 →TiSi x +HCl, and a second chemical process described by TiCl 4 +Si+H 2 →TiSi x +HCl, wherein n is greater than or equal to 1, and x is less than or equal to 2; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 4
Dependent Claim
139 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide formed on an exposed silicon base layer, wherein the titanium suicide is produced by a method comprising forming titanium silicide in a chemical vapor deposition chamber according to a first chemical process described by TiCl 4 +Si n H 2n+2 +H 2 →TiSi x +HCl, and a second chemical process described by TiCl 4 +Si+H 2 →TiSi x +HCl, wherein n is greater than or equal to 1, and x is less than or equal to 2; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 5
Dependent Claim
215 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is formed by a method comprising: combining a titanium precursor in the presence of hydrogen in a chemical vapor deposition chamber; forming the titanium silicide on an exposed silicon base layer defining a bottom of a contact hole by reacting the titanium precursor with the silicon base layer; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide; titanium, wherein the titanium is formed by a method comprising: combining the titanium precursor in the presence of hydrogen in the chemical vapor deposition chamber; forming the titanium on an insulator defining sidewalls of the contact hole by reacting the titanium precursor with the hydrogen; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium, wherein forming the titanium and forming the titanium silicide occur substantially simultaneously; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 6
Dependent Claim
215 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is formed by a method comprising: combining a titanium precursor in the presence of hydrogen in a chemical vapor deposition chamber; forming the titanium silicide on an exposed silicon base layer defining a bottom of a contact hole by reacting the titanium precursor with the silicon base layer; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide; titanium, wherein the titanium is formed by a method comprising: combining the titanium precursor in the presence of hydrogen in the chemical vapor deposition chamber; forming the titanium on an insulator defining sidewalls of the contact hole by reacting the titanium precursor with the hydrogen; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium, wherein forming the titanium and forming the titanium silicide occur substantially simultaneously; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 7
Dependent Claim
231 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is formed by a method comprising: combining TiCl 4 in the presence of hydrogen in a chemical vapor deposition chamber; forming the titanium silicide on an exposed silicon base layer defining a bottom of a contact hole using a first chemical process described by TiCl 4 +Si+H 2 →TiSi x +HCl, wherein x is less than or equal to 2; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide; titanium, wherein the titanium is formed by a method comprising: combining the TiCl 4 in the presence of hydrogen in the chemical vapor deposition chamber; forming the titanium on an insulator defining sidewalls of the contact hole using a second chemical process described by TiCl 4 +H 2 →Ti+HCl; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium, wherein forming the titanium and forming the titanium silicide occur substantially simultaneously; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 8
Dependent Claim
231 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is formed by a method comprising: combining TiCl 4 in the presence of hydrogen in a chemical vapor deposition chamber; forming the titanium silicide on an exposed silicon base layer defining a bottom of a contact hole using a first chemical process described by TiCl 4 +Si+H 2 →TiSi x +HCl, wherein x is less than or equal to 2; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide; titanium, wherein the titanium is formed by a method comprising: combining the TiCl 4 in the presence of hydrogen in the chemical vapor deposition chamber; forming the titanium on an insulator defining sidewalls of the contact hole using a second chemical process described by TiCl 4 +H 2 →Ti+HCl; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium, wherein forming the titanium and forming the titanium silicide occur substantially simultaneously; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 9
Dependent Claim
218 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is formed by a method comprising: combining tetradimethyl amino titanium in the presence of hydrogen in a chemical vapor deposition chamber; forming the titanium silicide on an exposed silicon base layer defining a bottom of a contact hole by reacting the tetradimethyl amino titanium with the silicon base layer; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide; titanium, wherein the titanium is formed by a method comprising: combining the tetradimethyl amino titanium in the presence of hydrogen in a chemical vapor deposition chamber; forming the titanium on an insulator defining sidewalls of the contact hole by reacting the tetradimethyl amino titanium with the hydrogen; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium, wherein forming the titanium and forming the titanium silicide occur substantially simultaneously; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 10
Dependent Claim
218 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is formed by a method comprising: combining tetradimethyl amino titanium in the presence of hydrogen in a chemical vapor deposition chamber; forming the titanium silicide on an exposed silicon base layer defining a bottom of a contact hole by reacting the tetradimethyl amino titanium with the silicon base layer; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide; titanium, wherein the titanium is formed by a method comprising: combining the tetradimethyl amino titanium in the presence of hydrogen in a chemical vapor deposition chamber; forming the titanium on an insulator defining sidewalls of the contact hole by reacting the tetradimethyl amino titanium with the hydrogen; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium, wherein forming the titanium and forming the titanium silicide occur substantially simultaneously; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 11
Dependent Claim
143 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is formed by a method comprising: combining a titanium precursor and a silicon precursor in the presence of hydrogen in a chemical vapor deposition chamber; forming the titanium silicide on a silicon base layer by reacting the titanium precursor with the silicon precursor and by reacting the titanium precursor with the silicon base layer; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 12
Dependent Claim
143 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is formed by a method comprising: combining a titanium precursor and a silicon precursor in the presence of hydrogen in a chemical vapor deposition chamber; forming the titanium silicide on a silicon base layer by reacting the titanium precursor with the silicon precursor and by reacting the titanium precursor with the silicon base layer; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 13
Dependent Claim
169 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is formed by a method comprising: combining TiCl 4 and Si n H 2n+2 in the presence of hydrogen in a chemical vapor deposition chamber, wherein n is greater than 1; forming the titanium silicide on a silicon base layer using a first chemical process described by TiCl 4 +Si n H 2n+2 →TiSi x +HCl and using a second chemical process described by TiCl 4 +Si+H 2 →TiSi x +HCl, wherein x is less than or equal to 2; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 14
Dependent Claim
169 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is formed by a method comprising: combining TiCl 4 and Si n H 2n+2 in the presence of hydrogen in a chemical vapor deposition chamber, wherein n is greater than 1; forming the titanium silicide on a silicon base layer using a first chemical process described by TiCl 4 +Si n H 2n+2 →TiSi x +HCl and using a second chemical process described by TiCl 4 +Si+H 2 →TiSi x +HCl, wherein x is less than or equal to 2; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 15
Dependent Claim
163 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is formed by a method comprising: combining Ti(N(CH 3 ) 2 ) 4 and Si n H 2n+2 in the presence of hydrogen in a chemical vapor deposition chamber, wherein n is greater than 1; forming the titanium silicide on a silicon base layer by reacting the Ti(N(CH 3 ) 2 ) 4 with the Si n H 2n+2 and by reacting the Ti(N(CH 3 ) 2 ) 4 with the silicon base layer; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
Claim 16
Dependent Claim
163 words
A memory, comprising: a memory array; a control circuit, operatively coupled to the memory array; and address logic, operatively coupled to the memory array and the control circuit; wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising: titanium silicide, wherein the titanium silicide is formed by a method comprising: combining Ti(N(CH 3 ) 2 ) 4 and Si n H 2n+2 in the presence of hydrogen in a chemical vapor deposition chamber, wherein n is greater than 1; forming the titanium silicide on a silicon base layer by reacting the Ti(N(CH 3 ) 2 ) 4 with the Si n H 2n+2 and by reacting the Ti(N(CH 3 ) 2 ) 4 with the silicon base layer; and operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide; titanium nitride on the titanium silicide; and a plug material on the titanium nitride.
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