Patent US6143362A successfully refreshed from Google Patents.
US6143362A
Expired / Lapsed
US
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Chemical vapor deposition of titanium
Assignee: Round Rock Research LLC
•
Filing: 1998-02-25
•
Granted: 2000-11-07
•
Expires: 2018-02-25
Abstract
Abstract A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
Inventors
- 👤 Gurtej Singh Sandhu
- 👤 Donald L. Westmoreland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:39
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/0281; C23C16/06; H10P; H10P14/00; H10P14/40; H10P14/418; H10W20/033; H10W20/042; H10W20/045; H10W20/049
Claims Analysis
Total Claims: 49
Claim 1
Independent Claim
77 words
A method for forming a titanium layer supported by a substrate, comprising: forming a seed layer supported by the substrate by combining a first precursor with a first reducing agent; and forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer; wherein forming a seed layer comprises forming a zinc seed layer in accordance with the following chemical process (I): ZnR.sub.2 +H.sub.2 (gas)→Zn+alkanes, (I) wherein R is an alkyl group.
Claim 2
Independent Claim
77 words
A method for forming a titanium layer supported by a substrate, comprising: forming a seed layer supported by the substrate by combining a first precursor with a first reducing agent; and forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer; wherein forming a seed layer comprises forming a zinc seed layer in accordance with the following chemical process (I): ZnR.sub.2 +H.sub.2 (gas)→Zn+alkanes, (I) wherein R is an alkyl group.
Claim 3
Dependent Claim
15 words
The method of claim 1, further comprising annealing the titanium layer to form titanium silicide.
Claim 4
Dependent Claim
23 words
The method of claim 1, wherein forming a zinc seed layer is performed at a temperature between approximately 100 and 600 degrees Celsius.
Claim 5
Dependent Claim
14 words
The method of claim 1, wherein forming the titanium layer comprises forming titanium silicide.
Claim 6
Dependent Claim
24 words
The method of claim 4, wherein forming titanium silicide comprises forming titanium silicide at a temperature of between approximately 250 to 750 degrees Celsius.
Claim 7
Dependent Claim
20 words
The method of claim 1, wherein forming the titanium layer comprises forming the titanium layer comprising a titanium zinc alloy.
Claim 8
Independent Claim
69 words
A method for forming a titanium layer supported by a substrate, comprising: forming a seed layer supported by the substrate by combining a first precursor with a first reducing agent; and forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer; wherein forming the titanium layer comprises forming the titanium layer in accordance with the following chemical process (II): TiCl.sub.4 +Zn→Ti+ZnCl.sub.2. (II)
Claim 9
Independent Claim
69 words
A method for forming a titanium layer supported by a substrate, comprising: forming a seed layer supported by the substrate by combining a first precursor with a first reducing agent; and forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer; wherein forming the titanium layer comprises forming the titanium layer in accordance with the following chemical process (II): TiCl.sub.4 +Zn→Ti+ZnCl.sub.2. (II)
Claim 10
Dependent Claim
28 words
The method of claim 7, wherein forming the titanium layer in accordance with chemical process (II) is performed at a temperature between approximately 100 and 600 degrees Celsius.
Claim 11
Independent Claim
122 words
A method for forming a titanium layer on an integrated circuit, comprising: forming a seed layer on the integrated circuit by combining a first precursor with a reducing agent with chemical vapor deposition (CVD); forming the titanium layer on the integrated circuit by combining the seed layer with a second precursor with CVD; wherein the seed layer is zinc, and formed according to the following chemical process (I): ZnR.sub.2 (gas)+H.sub.2 (gas)→Zn(solid)+alkanes(gas),(I) wherein R is an alkyl group and chemical process (I) is performed at a temperature greater than 400 degrees Celsius; and wherein the titanium layer is formed according to the following chemical process (II): TiCl.sub.4 (gas)+Zn(solid)→Ti(solid)+ZnCl.sub.2 (gas),(II) wherein chemical process (II) is performed at a temperature greater than 400 degrees Celsius.
Claim 12
Independent Claim
122 words
A method for forming a titanium layer on an integrated circuit, comprising: forming a seed layer on the integrated circuit by combining a first precursor with a reducing agent with chemical vapor deposition (CVD); forming the titanium layer on the integrated circuit by combining the seed layer with a second precursor with CVD; wherein the seed layer is zinc, and formed according to the following chemical process (I): ZnR.sub.2 (gas)+H.sub.2 (gas)→Zn(solid)+alkanes(gas),(I) wherein R is an alkyl group and chemical process (I) is performed at a temperature greater than 400 degrees Celsius; and wherein the titanium layer is formed according to the following chemical process (II): TiCl.sub.4 (gas)+Zn(solid)→Ti(solid)+ZnCl.sub.2 (gas),(II) wherein chemical process (II) is performed at a temperature greater than 400 degrees Celsius.
Claim 13
Dependent Claim
15 words
The method of claim 9, further comprising annealing the titanium layer to form titanium silicide.
Claim 14
Dependent Claim
15 words
The method of claim 9, wherein forming the titanium layer further comprises forming titanium silicide.
Claim 15
Dependent Claim
25 words
The method of claim 11, wherein forming the titanium silicide comprises forming titanium silicide at a temperature of between approximately 250 to 750 degrees Celsius.
Claim 16
Dependent Claim
19 words
The method of claim 9, wherein forming the titanium layer comprises forming the titanium layer comprising a titanium alloy.
Claim 17
Dependent Claim
24 words
The method of claim 13, wherein forming the titanium layer comprising a titanium alloy comprises forming the titanium layer comprising a titanium zinc alloy.
Claim 18
Dependent Claim
68 words
A chemical vapor deposition method of providing a conformal layer of titanium on an integrated circuit within a chemical vapor deposition (CVD) reactor, the method comprising: mounting an integrated circuit in the CVD reactor; injecting a first precursor and reducing agent in the CVD reactor; forming zinc on the integrated circuit; injecting a second precursor in the CVD reactor; and forming the titanium layer on the integrated circuit.
Claim 19
Dependent Claim
68 words
A chemical vapor deposition method of providing a conformal layer of titanium on an integrated circuit within a chemical vapor deposition (CVD) reactor, the method comprising: mounting an integrated circuit in the CVD reactor; injecting a first precursor and reducing agent in the CVD reactor; forming zinc on the integrated circuit; injecting a second precursor in the CVD reactor; and forming the titanium layer on the integrated circuit.
Claim 20
Dependent Claim
15 words
The method of claim 15, further comprising annealing the titanium layer to form titanium suicide.
Claim 21
Dependent Claim
28 words
The method of claim 15, wherein forming the zinc is in accordance with the following chemical process (I): ZnR.sub.2 +H.sub.2 (gas)→Zn+alkanes, (I) wherein R is an alkyl group.
Claim 22
Dependent Claim
28 words
The method of claim 17, wherein forming the zinc comprises forming the zinc according to chemical process (I) at a temperature between approximately 100 and 600 degrees Celsius.
Claim 23
Dependent Claim
26 words
The method of claim 15, wherein forming the titanium layer comprises forming the titanium layer in accordance with the following chemical process (II): TiCl.sub.4 +Zn→Ti+ZnCl.sub.2. (II)
Claim 24
Dependent Claim
29 words
The method of claim 19, wherein forming the titanium layer comprises forming the titanium layer according to chemical process (II) at a temperature between 100 and 600 degrees Celsius.
Claim 25
Dependent Claim
15 words
The method of claim 15, wherein forming the titanium layer further comprises forming titanium silicide.
Claim 26
Dependent Claim
24 words
The method of claim 21, wherein forming titanium silicide comprises forming titanium silicide at a temperature of between approximately 250 to 750 degrees Celsius.
Claim 27
Dependent Claim
17 words
The method of claim 15, wherein forming a titanium layer comprises forming a titanium zinc alloy layer.
Claim 28
Independent Claim
27 words
A method for forming a titanium layer supported by a substrate, comprising forming the titanium layer according to the following chemical process (III): TiCl.sub.4 +Zn(source)→Ti+ZnCl.sub.2. (III) 25.
Claim 29
Independent Claim
27 words
A method for forming a titanium layer supported by a substrate, comprising forming the titanium layer according to the following chemical process (III): TiCl.sub.4 +Zn(source)→Ti+ZnCl.sub.2. (III) 25.
Claim 30
Dependent Claim
15 words
The method of claim 24, further comprising annealing the titanium layer to form titanium silicide.
Claim 31
Dependent Claim
35 words
The method of claim 24, wherein forming the titanium layer comprises forming the titanium layer according to the following chemical process (IV): ZnR.sub.2 (gas)+H.sub.2 (gas)+TiCl.sub.4 (gas)→Ti (solid)+ZnCl.sub.2 (gas)+alkanes(gas), (IV) where R is an alkyl group.
Claim 32
Dependent Claim
25 words
The method of claim 26, wherein forming the titanium layer comprises forming the titanium layer at a temperature between approximately 100 and 700 degrees Celsius.
Claim 33
Dependent Claim
14 words
The method of claim 24, wherein forming the titanium layer comprises forming titanium silicide.
Claim 34
Dependent Claim
23 words
The method of claim 28, wherein forming titanium silicide comprises forming titanium silicide at a temperature between approximately 250 to 750 degrees Celsius.
Claim 35
Dependent Claim
19 words
The method of claim 24, wherein forming the titanium layer comprises forming the titanium layer comprising a titanium alloy.
Claim 36
Dependent Claim
24 words
The method of claim 30, wherein forming the titanium layer comprising a titanium alloy comprises forming the titanium layer comprising a titanium zinc alloy.
Claim 37
Dependent Claim
20 words
The method of claim 24, wherein forming the titanium layer comprises forming a titanium layer with chemical vapor deposition (CVD).
Claim 38
Independent Claim
58 words
A method for forming a titanium layer supported by a substrate, comprising: forming a zinc seed layer supported by the substrate by combining a zinc precursor of the form ZnR 2 , where R is an alkyl group, with hydrogen; and forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer.
Claim 39
Independent Claim
58 words
A method for forming a titanium layer supported by a substrate, comprising: forming a zinc seed layer supported by the substrate by combining a zinc precursor of the form ZnR 2 , where R is an alkyl group, with hydrogen; and forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer.
Claim 40
Independent Claim
67 words
A method for forming a titanium silicide layer supported by a substrate, comprising: forming a zinc seed layer supported by the substrate by combining a zinc precursor of the form ZnR 2 , where R is an alkyl group, with hydrogen; forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer; and annealing the titanium layer to form titanium silicide.
Claim 41
Independent Claim
67 words
A method for forming a titanium silicide layer supported by a substrate, comprising: forming a zinc seed layer supported by the substrate by combining a zinc precursor of the form ZnR 2 , where R is an alkyl group, with hydrogen; forming the titanium layer supported by the substrate by combining a titanium-containing precursor with the seed layer; and annealing the titanium layer to form titanium silicide.
Claim 42
Independent Claim
57 words
A method for forming a titanium layer supported by a substrate, comprising: forming a zinc seed layer supported by the substrate by combining a zinc-containing precursor of the form ZnR 2 , where R is an alkyl group, with hydrogen; and forming the titanium layer supported by the substrate by combining TiCl 4 with the seed layer.
Claim 43
Independent Claim
57 words
A method for forming a titanium layer supported by a substrate, comprising: forming a zinc seed layer supported by the substrate by combining a zinc-containing precursor of the form ZnR 2 , where R is an alkyl group, with hydrogen; and forming the titanium layer supported by the substrate by combining TiCl 4 with the seed layer.
Claim 44
Independent Claim
66 words
A method for forming a titanium silicide layer supported by a substrate, comprising: forming a zinc seed layer supported by the substrate by combining a zinc-containing precursor of the form ZnR 2 , where R is an alkyl group, with hydrogen; forming the titanium layer supported by the substrate by combining TiCl 4 with the seed layer; and annealing the titanium layer to form titanium silicide.
Claim 45
Independent Claim
66 words
A method for forming a titanium silicide layer supported by a substrate, comprising: forming a zinc seed layer supported by the substrate by combining a zinc-containing precursor of the form ZnR 2 , where R is an alkyl group, with hydrogen; forming the titanium layer supported by the substrate by combining TiCl 4 with the seed layer; and annealing the titanium layer to form titanium silicide.
Claim 46
Independent Claim
69 words
A method for forming a titanium alloy layer supported by a substrate, comprising: forming a zinc seed layer supported by the substrate by combining a zinc precursor of the form ZnR 2 , where R is an alkyl group, with hydrogen; and forming the titanium alloy layer supported by the substrate by combining a titanium-containing precursor with the seed layer, wherein the titanium alloy layer comprises titanium and zinc.
Claim 47
Independent Claim
69 words
A method for forming a titanium alloy layer supported by a substrate, comprising: forming a zinc seed layer supported by the substrate by combining a zinc precursor of the form ZnR 2 , where R is an alkyl group, with hydrogen; and forming the titanium alloy layer supported by the substrate by combining a titanium-containing precursor with the seed layer, wherein the titanium alloy layer comprises titanium and zinc.
Claim 48
Independent Claim
67 words
A method for forming a titanium alloy layer supported by a substrate, comprising: forming a zinc seed layer supported by the substrate by combining a zinc-containing precursor of the form ZnR 2 , where R is an alkyl group, with hydrogen; and forming the titanium layer supported by the substrate by combining TiCl 4 with the seed layer, wherein the titanium alloy layer comprises titanium and zinc.
Claim 49
Independent Claim
67 words
A method for forming a titanium alloy layer supported by a substrate, comprising: forming a zinc seed layer supported by the substrate by combining a zinc-containing precursor of the form ZnR 2 , where R is an alkyl group, with hydrogen; and forming the titanium layer supported by the substrate by combining TiCl 4 with the seed layer, wherein the titanium alloy layer comprises titanium and zinc.
References Cited (Backward Citations)
US4340617A
Cited
US4343870A
Cited
US4359490A
Cited
US4713258A
Cited
US4721631A
Cited
US4868005A
Cited
US4876112A
Cited
US4751101A
Cited
US4957777A
Cited
US5022905A
Cited
US5015330A
Cited
US5049975A
Cited
US4923717A
Cited
US4971655A
Cited
US5005519A
Cited
US5032233A
Cited
US5196360A
Cited
US5136362A
Cited
US5202579A
Cited
US5459353A
Cited
US5147819A
Cited
US5374591A
Cited
US5124780A
Cited
US5173327A
Cited
US5571572A
Cited
US5192589A
Cited
US5508066A
Cited
US5227334A
Cited
US5278100A
Cited
US5275715A
Cited
US5693557A
Cited
US5227331A
Cited
US5252518A
Cited
US5306951A
Cited
US5391410A
Cited
US5254499A
Cited
US5240739A
Cited
US5376405A
Cited
US5258096A
Cited
US5232873A
Cited
US5320880A
Cited
US5416045A
Cited
US5344792A
Cited
US5973402A
Cited
US5273783A
Cited
US5381302A
Cited
US5506166A
Cited
US5246881A
Cited
US5399379A
Cited
US5393564A
Cited
US5425392A
Cited
US5341016A
Cited
US5384289A
Cited
US5384284A
Cited
US5828131A
Cited
US5453640A
Cited
US5496762A
Cited
US5567243A
Cited
US5747116A
Cited
JPH08176823A
Cited
US5641545A
Cited
US5575708A
Cited
US5644166A
Cited
US5595784A
Cited
US5773890A
Cited
US5607722A
Cited
US5633200A
Cited
US5956595A
Cited
WO1998034445A1
Cited
US5834371A
Cited
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