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US6139905A
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Integrated CVD/PVD Al planarization using ultra-thin nucleation layers
Assignee: Applied Materials Inc
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Filing: 1997-04-11
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Granted: 2000-10-31
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Expires: 2017-04-11
Abstract
Abstract The present invention provides a method and apparatus for forming an interconnect with application in small feature sizes (such as quarter micron widths) having high aspect ratios. Generally, the present invention provides a method and apparatus for depositing a wetting layer for subsequent physical vapor deposition to fill the interconnect. In one aspect of the invention, the wetting layer is a metal layer deposited using either CVD techniques or electroplating, such as CVD aluminum (Al). The wetting layer is nucleated using an ultra-thin layer, denoted as +531 layer, as a nucleation layer. The +531 layer is preferably comprised of a material such as Ti, TiN, Al, Ti/TiN, Ta, TaN, Cu, a flush of TDMAT or the like. The +531 layer may be deposited using PVD or CVD techniques, preferably PVD techniques to improve film quality and orientation within the feature. Contrary to conventional wisdom, the +531 layer is not continuous to nucleate the growth of the CVD wetting layer thereon. A PVD deposited metal is then deposited on the wetting layer at low temperature to fill the interconnect.
Inventors
- 👤 Liang-Yuh Chen
- 👤 Mehul Naik
- 👤 Ted Guo
- 👤 Roderick Craig Mosely
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:58
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H10P14/46; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/041; H10W20/042; H10W20/045; H10W20/056; H10W20/062
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
69 words
A method for processing a substrate, comprising: (a) introducing the substrate into a first process zone; (b) depositing a dis-continuous nucleation layer having scattered nucleation sites within vias on the substrate; (c) introducing the substrate into a second process zone; (d) depositing a wetting layer on the dis-continuous nucleation layer; (e) introducing the substrate into a third process zone; and (f) depositing a conducting laster on the wretting layer.
Claim 2
Independent Claim
69 words
A method for processing a substrate, comprising: (a) introducing the substrate into a first process zone; (b) depositing a dis-continuous nucleation layer having scattered nucleation sites within vias on the substrate; (c) introducing the substrate into a second process zone; (d) depositing a wetting layer on the dis-continuous nucleation layer; (e) introducing the substrate into a third process zone; and (f) depositing a conducting laster on the wretting layer.
Claim 3
Dependent Claim
33 words
The method of claim 1, wherein the depositing a dis-continuous nucleation layer comprises depositing a dis-continuous layer selected from the group consisting of Ti, TiN, Ta, TaN, Al, Cu, TDMAT, and combinations thereof.
Claim 4
Dependent Claim
34 words
The method of claim 2, wherein the dis-continuous nucleation layer is deposited by physical vapor depositing a dis-continuous layer selected from the group consisting of Ti, TiN, Ta, TaN, Al, Cu, and combinations thereof.
Claim 5
Dependent Claim
25 words
The method of claim 3, wherein the wetting layer is comprised of a material selected from the group consisting of Al, Cu, and combinations thereof.
Claim 6
Dependent Claim
37 words
The method of claim 1, wherein the dis-continuous nucleation layer is comprised of a material selected from the group consisting of Ti, TiN, Al, Cu, Si, Nb, Ta, TaN, aluminum silicates, silica, high alumina, and combinations thereof.
Claim 7
Dependent Claim
27 words
The method of claim 1, wherein the depositing a conducting layer comprises depositing a metal layer by physical vapor deposition over a chemical vapor deposited conducting layer.
Claim 8
Dependent Claim
19 words
The method of claim 6, wherein the metal layer is deposited at a temperature greater than about 250° C.
Claim 9
Independent Claim
39 words
A method for filling vias on a substrate, comprising: depositing a discontinuous nucleation layer having scattered nucleation sites within the vias; depositing a wetting layer on the nucleation layer; and then depositing a conducting layer on the wetting layer.
Claim 10
Independent Claim
39 words
A method for filling vias on a substrate, comprising: depositing a discontinuous nucleation layer having scattered nucleation sites within the vias; depositing a wetting layer on the nucleation layer; and then depositing a conducting layer on the wetting layer.
Claim 11
Dependent Claim
37 words
The method of claim 8, wherein the dis-continuous nucleation layer is comprised of a material selected from the group consisting of Ti, TiN, Al, Cu, Si, Nb, Ta, TaN, aluminum silicates, silica, high alumina, and combinations thereof.
Claim 12
Dependent Claim
25 words
The method of claim 9, wherein the wetting layer is comprised of a material selected from the group consisting of Al, Cu, and combinations thereof.
Claim 13
Dependent Claim
36 words
The method of claim 9, wherein the discontinuous nucleation layer is comprised of Ti having a thickness a few atoms to about 500Å and TiN having a thickness of a few atoms to about 300 Å.
Claim 14
Dependent Claim
37 words
The method of claim 11, wherein the wetting layer comprises a material selected from the group consisting of Al, Cu, and combinations thereof, and the wetting layer has a thickness of about 50Å to about 500 Å.
Claim 15
Dependent Claim
13 words
The method of claim 8, wherein the conducting layer is a metal layer.
Claim 16
Dependent Claim
25 words
The method of claim 13, wherein the metal layer is comprised of a material selected from the group consisting of Al, Cu, and combinations thereof.
Claim 17
Dependent Claim
20 words
The method of claim 14, wherein the metal layer is deposited at a temperature of greater than about 250° C.
Claim 18
Dependent Claim
13 words
The method of claim 1, wherein the wetting layer conforms to the vias.
Claim 19
Dependent Claim
12 words
The method of claim 16, wherein the conducting layer fills the vias.
Claim 20
Dependent Claim
13 words
The method of claim 8, wherein the wetting layer conforms to the vias.
Claim 21
Dependent Claim
12 words
The method of claim 18, wherein the conducting layer fills the vias.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-31 | 2004-05-01 | 2004-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-31 | 2008-05-01 | 2008-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-31 | 2012-05-01 | 2012-10-31 | $7700.00 | Window Closed / Lapsed |