Blanket-selective deposition of cvd aluminum and reflectivity improvement using a self-aligning ultra-thin layer

Abstract

Abstract The present invention relates generally to an improved apparatus and process to provide a thin self-aligning layer prior to forming a conducting film layer there over to improve the film characteristics and deposition coverage. In one aspect of the invention, a dielectric layer (32) is formed over a conducting or semiconducting layer (36) and etched to form an aperture (38) exposing the underlying conducting or semiconducting layer (36) on the aperture floor (42). An ultra-thin nucleation layer (34) is then deposited by either vapor deposition or chemical vapor deposition onto the field (33) of the dielectric layer (32). A CVD metal layer is then deposited onto the structure (30) to achieve selective deposition on the floor (42) of the aperture (38), while preferably also forming a highly oriented blanket layer (46) on the field (33). In another aspect of the invention, a thin, self-aligning layer is formed over a barrier layer prior to deposition of a conducting film there over. It is believed that the self-aligning layer enhances the reflectivity of the films by improving the crystal structure in the resulting film and provides improved electromigration performance by providing 〈111〉 crystal orientation. The process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the process occurs without the formation of oxides between the layers.

Inventors

• 👤 Ted Tie Guo
• 👤 Liang-Yuh Chen
• 👤 Fusen Chen
• 👤 Roderick Craig Mosely

Bibliographic Details