US5582881A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for deposition of a Ti/TiN cap layer on aluminum metallization and apparatus
Assignee: Advanced Micro Devices Inc
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Filing: 1996-02-16
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Granted: 1996-12-10
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Expires: 2016-02-16
Abstract
Abstract A single chamber of a vapor deposition system is used to deposit both Ti and TiN, subsequent to deposition of Al or Al alloy. Because such layers are deposited in the same chamber, the process requires fewer handling steps than the conventional process, thereby increasing throughput. Still further, only three physical vapor deposition chambers of the four of the apparatus are used, thereby allowing the fourth chamber to be used for other deposition.
Inventors
- 👤 Paul R. Besser
- 👤 Raymond Lee
- 👤 Khanh Tran
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:59
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/16; C23C14/165; C23C14/0641; C23C14/22; C23C14/56; C23C14/568
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
86 words
A method of depositing an underlayer, aluminum or aluminum alloy, titanium, and titanium nitride in sequence on a sample comprising: positioning a sample in a first chamber; depositing an underlayer on the sample in the first chamber; positioning the sample in a second chamber; depositing aluminum or aluminum alloy on the underlayer in the second chamber; positioning the sample in a third chamber; depositing titanium on the aluminum or aluminum alloy in the third chamber; and depositing titanium nitride on the titanium in the third chamber.
Claim 2
Independent Claim
86 words
A method of depositing an underlayer, aluminum or aluminum alloy, titanium, and titanium nitride in sequence on a sample comprising: positioning a sample in a first chamber; depositing an underlayer on the sample in the first chamber; positioning the sample in a second chamber; depositing aluminum or aluminum alloy on the underlayer in the second chamber; positioning the sample in a third chamber; depositing titanium on the aluminum or aluminum alloy in the third chamber; and depositing titanium nitride on the titanium in the third chamber.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein the step of depositing the titanium on said aluminum or aluminum alloy comprises providing a target in the third chamber.
Claim 4
Dependent Claim
29 words
The method of claim 2 and further comprising the step of introducing N 2 gas into the third chamber during the step of depositing titanium nitride on the titanium.
Claim 5
Dependent Claim
28 words
The method of claim 3 wherein the step of depositing titanium comprises the step of creating a plasma in the third chamber between the target and the sample.
Claim 6
Dependent Claim
30 words
The method of claim 4 wherein the step of creating a plasma comprises the steps of introducing argon gas into the third chamber and providing electrical power in the chamber.
Claim 7
Independent Claim
81 words
A device for depositing an underlayer, aluminum or aluminum alloy, titanium, and titanium nitride in sequence on a sample comprising: an apparatus including first, second and third chambers; means for depositing an underlayer on the sample in the first chamber; means for depositing aluminum or aluminum alloy on the underlayer in the second chamber; means for depositing titanium on the aluminum or aluminum alloy in the third chamber; and means for depositing titanium nitride on the titanium in the third chamber.
Claim 8
Independent Claim
81 words
A device for depositing an underlayer, aluminum or aluminum alloy, titanium, and titanium nitride in sequence on a sample comprising: an apparatus including first, second and third chambers; means for depositing an underlayer on the sample in the first chamber; means for depositing aluminum or aluminum alloy on the underlayer in the second chamber; means for depositing titanium on the aluminum or aluminum alloy in the third chamber; and means for depositing titanium nitride on the titanium in the third chamber.
Claim 9
Dependent Claim
12 words
The device of claim 6 wherein the apparatus comprises a fourth chamber.
Claim 10
Dependent Claim
14 words
The device of claim 6 and further comprising a target in the third chamber.
Claim 11
Dependent Claim
23 words
The device of claim 8 and further comprising means for creating a plasma in the third chamber between the target and the sample.
Claim 12
Dependent Claim
28 words
The device of claim 9 and further comprising means for introducing N 2 gas into the third chamber during the step of depositing titanium nitride on the titanium.
Claim 13
Dependent Claim
34 words
The device of claim 10 wherein the means for creating the plasma in the third chamber comprise means for introducing argon gas into the third chamber and providing electrical power in the third chamber.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-10 | 2000-06-10 | 2000-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-10 | 2004-06-10 | 2004-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-10 | 2008-06-10 | 2008-12-10 | $7700.00 | Window Closed / Lapsed |