US5312774A
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Method for manufacturing a semiconductor device comprising titanium
Assignee: Sharp Corp
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Filing: 1992-12-03
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Granted: 1994-05-17
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Expires: 2012-12-03
Abstract
Abstract A method for manufacturing a semiconductor device comprising forming a titanium or titanium compound film by a CVD method which uses a material gas containing an organic titanium compound of the formula (I) <IMAGE> (I) wherein R is a hydrogen atom, a lower alkyl group, a C8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas.
Inventors
- 👤 Kazuyo Nakamura
- 👤 Keiichiro Uda
- 👤 Osamu Yamazaki
- 👤 Hiromi Hattori
- 👤 Nobutaka Fukushima
- 👤 Shigeo Onishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:32
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/055; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10W20/033; H10W20/037; H10W20/038; H10W20/039; H10W20/056
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
85 words
A method of manufacturing a semiconductor device comprising forming a titanium or titanium compound film by a CVD method which uses a gas containing an organic titanium compound of the formula (I) ##STR3## wherein R is a lower alkyl group, a C 8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas, and wherein a titanium silicide film is formed by using a gas containing silicon and hydrogen as a reducing gas.
Claim 2
Independent Claim
85 words
A method of manufacturing a semiconductor device comprising forming a titanium or titanium compound film by a CVD method which uses a gas containing an organic titanium compound of the formula (I) ##STR3## wherein R is a lower alkyl group, a C 8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas, and wherein a titanium silicide film is formed by using a gas containing silicon and hydrogen as a reducing gas.
Claim 3
Dependent Claim
55 words
The method of claim 1 wherein the titanium or titanium compound film is formed over any one of a substrate, a substrate having a desired element and an interlayer insulating film thereon or a substrate having desired elements and an interlayer insulating film thereon and further a contact hole formed in the interlayer insulating film.
Claim 4
Dependent Claim
27 words
The method of claim 2 wherein the titanium or titanium compound film is formed to cover the interlayer insulating film which has the contact hole formed therein.
Claim 5
Dependent Claim
25 words
The method of claim 1 wherein the organic titanium compound is of the formula (I) in which R is a methyl, t-butyl or trimethylsilyl group.
Claim 6
Independent Claim
140 words
A method of manufacturing a semiconductor device comprising: a) forming an interlayer insulating film on a lower conductive layer constituted by a substrate itself or formed on a substrate, b) forming a contact hole in the interlayer insulating film, c) forming a titanium or titanium compound film by a CVD method to bury the contact hole and cover the remaining interlayer insulating film, the CVD method using a gas containing an organic titanium compound of formula (I) ##STR4## wherein R is a hydrogen atom, a lower alkyl group, a C 8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas, d) etching the titanium or titanium compound film on the remaining interlayer insulating film to form a contact plug, and e) forming an upper conductive layer thereon.
Claim 7
Independent Claim
140 words
A method of manufacturing a semiconductor device comprising: a) forming an interlayer insulating film on a lower conductive layer constituted by a substrate itself or formed on a substrate, b) forming a contact hole in the interlayer insulating film, c) forming a titanium or titanium compound film by a CVD method to bury the contact hole and cover the remaining interlayer insulating film, the CVD method using a gas containing an organic titanium compound of formula (I) ##STR4## wherein R is a hydrogen atom, a lower alkyl group, a C 8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas, d) etching the titanium or titanium compound film on the remaining interlayer insulating film to form a contact plug, and e) forming an upper conductive layer thereon.
Claim 8
Dependent Claim
15 words
The method of claim 5, wherein a TiN film is further formed before step e).
Claim 9
Dependent Claim
14 words
The method of claim 5 wherein the upper conductive layer comprises Cu or Al.
Claim 10
Dependent Claim
14 words
The method of claim 5 wherein an annealing is further conducted before step e).
Claim 11
Dependent Claim
23 words
The method of claim 5 wherein the upper conductive layer comprises Ti, thereby completing the contact plug integrally with the upper conductive layer.
Claim 12
Dependent Claim
24 words
The method of claim 5 wherein a titanium silicide film is formed by using a gas containing silicon and hydrogen as a reducing gas.
Claim 13
Dependent Claim
25 words
The method of claim 5 wherein the organic titanium compound is of the formula (I) in which R is a methyl, t-butyl or trimethylsilyl group.
References Cited (Backward Citations)
JPS63278352A
Cited
JPH01290771A
Cited
JPH0215620A
Cited
US5130172A
Cited
JPH02210833A
Cited
US5080927A
Cited
JPH03248464A
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