Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To prevent wiring from being stepwisely disconnected at contact step due to contact miniaturization and a bonding layer from breaking by burying a polycrystalline silicon layer and a high melting point metal layer in a contact hole. CONSTITUTION:An integrated circuit device has an n<+> type diffused layer 2, an interlayer insulating film 3, a contact hole 4, a polycrystalline silicon layer 5, a tungsten layer 6, an aluminum electrode wiring layer 8 and an oxide film 9. In such a structure, the hole 4 is buried with the layers 5, 6 to prevent the contact of the wiring layer led through the layer 6 of the hole 4 from being disconnected. When the layer 5 is buried, even if the layer 6 is buried by selectively growing to generate an enchroachment, the layer 2 on the substrate 1 is not damaged. Further, the hole 4 is buried to form another layer having a through hole or the like on the contact, thereby easily realizing a high density.

Inventors

• 👤 Yukinobu Murao
• 👤 幸信 村尾

Bibliographic Details