Patent US6054331A successfully refreshed from Google Patents.
US6054331A
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US
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Apparatus and methods of depositing a platinum film with anti-oxidizing function over a substrate
Assignee: Tong Yang Cement Corp
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Filing: 1998-01-05
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Granted: 2000-04-25
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Expires: 2018-01-05
Abstract
Abstract A platinum film, which is used as a bottom electrode for a capacitor in a DRAM cell or a non-volatile ferroelectric memory cell, is formed in two separate processes, wherein a first thickness platinum part thereof is deposited under an inert gas atmosphere, and the second thickness platinum part is deposited under an atmosphere containing oxygen, nitrogen and/or a mixture thereof as well as an inert gas. The platinum film is annealed under a vacuum atmosphere to remove the oxygen an/or nitrogen introduced during the deposition of the second thickness platinum part. The annealed platinum film prevents formation of an oxide on a functional intermediate film such as a diffusion barrier layer or an adhesion layer, which is provided below the bottom electrode of platinum film.
Inventors
- 👤 Hyun Jung Woo
- 👤 Dong Yeon Park
- 👤 Dong Su Lee
- 👤 Dong il Chun
- 👤 Eui Joon Yoon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 03:12
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/16; C23C14/165; C23C14/58; C23C14/5806; H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/694
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
108 words
A method for forming a platinum film on silicon wafer comprising: providing a substrate; forming a functional intermediate film on the substrate; depositing a first thickness platinum layer on the functional intermediate film under an inert gas atmosphere; depositing a second thickness platinum layer on top of the first thickness platinum layer under an atmosphere containing oxygen or nitrogen, or a combination thereof, wherein the first and second platinum layers comprise a platinum film; annealing the platinum film under a vacuum atmosphere to remove the oxygen and/or nitrogen introduced during deposition of the second thickness platinum part; and controlling orientation of the platinum film to a preferred orientation.
Claim 2
Independent Claim
108 words
A method for forming a platinum film on silicon wafer comprising: providing a substrate; forming a functional intermediate film on the substrate; depositing a first thickness platinum layer on the functional intermediate film under an inert gas atmosphere; depositing a second thickness platinum layer on top of the first thickness platinum layer under an atmosphere containing oxygen or nitrogen, or a combination thereof, wherein the first and second platinum layers comprise a platinum film; annealing the platinum film under a vacuum atmosphere to remove the oxygen and/or nitrogen introduced during deposition of the second thickness platinum part; and controlling orientation of the platinum film to a preferred orientation.
Claim 3
Dependent Claim
25 words
The method of claim 1, wherein the functional intermediate film is a diffusion barrier layer, a conductive plug, an adhesion layer, or an insulation layer.
Claim 4
Dependent Claim
56 words
The method of claim 2, wherein the functional intermediate film is a conductive plug and is formed from a material selected from the group consisting of TiN, zirconium nitride, titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide, nickel silicide, cobalt silicide, tantalum carbide, tantalum boride, polysilicon, germanium, W, Ta, Ti, Mo, TiW, boron carbide, and Cu.
Claim 5
Dependent Claim
78 words
The method of claim 2, wherein the functional intermediate film is a diffusion barrier layer and is formed from a material selected from the group consisting of ternary component amorphous materials (Ti--Si--N, Ta--B--N, Ti--B--N), conductive nitride, titanium aluminum nitride, Zr nitride, Hf nitride, Y nitride, Se nitride, La nitride, rare earth nitride, N deficient Al nitride, doped Al nitride, Mg nitride, Ca nitride, Sr nitride, Ba nitride, TiN, GaN, Ni nitride, Ta nitride, Co nitride, and W nitride.
Claim 6
Dependent Claim
46 words
The method of claim 2, wherein the functional intermediate film is an adhesion layer and is formed from a material selected from the group consisting of TiN, W, Ta, Ti, Sn, Ru, In, Ir, Os, Rh, and a silicide compound (Ni silicide, Co silicide, W silicide).
Claim 7
Dependent Claim
41 words
The method of claim 1, wherein the first thickness platinum part is formed to an extent that it can prevent the diffusion of the oxygen which can be introduced into the platinum film during the second thickness platinum part depositing step.
Claim 8
Dependent Claim
29 words
The method of claim 6, wherein the thickness of the first thickness platinum part is 5 to 50% of the total thickness of the platinum film to be deposited.
Claim 9
Dependent Claim
81 words
The method of claim 1, wherein the preferred orientation of the platinum film is controlled by changing at least one of: partial pressure ratios of oxygen, nitrogen and the mixture thereof to the entire gas in the atmosphere employed in depositing the second thickness platinum part of the platinum film; the temperature of the substrate during the deposition step; annealing temperature; and the ratio of the thickness of the first thickness platinum part to the total thickness of the platinum film.
Claim 10
Dependent Claim
21 words
The method of claim 1, wherein the inert gas is selected from the group consisting of Ar, Ne, Kr, and Xe.
Claim 11
Dependent Claim
20 words
The method of claim 1, wherein the temperature of the substrate during the deposition step does not exceed 500° C.
Claim 12
Dependent Claim
14 words
The method of claim 1, wherein the annealing temperature does not exceed 700° C.
Claim 13
Dependent Claim
33 words
The method of claim 1, wherein the depositing is performed using DC/RF sputtering, DC/RF magnetron sputtering, metal organic chemical vapor deposition, vacuum evaporation deposition, laser ablation deposition, partially ionized beam deposition, or electroplating.
Claim 14
Dependent Claim
88 words
The method of claim 1, wherein the substrate is formed from a material selected from the group consisting of silicon (Si), germanium (Ge) and diamond (C); compound materials selected from the group consisting of GaAs, InP, SiGe and SiC; ceramic single crystal (SrTiO 3 , LaAlO 3 , sapphire, KBr, NaCl, ZrO 2 , Si 3 N 4 , TiO 2 , Ta 2 O 5 , AlN) or poly-crystals thereof; metal (Au, Ag, Al, Ir, Pt, Cu, Pd, Ru, W); and amorphous/glassy materials (BSG, PSG, BPSG, Si).
Claim 15
Dependent Claim
22 words
The method of claim 1, further comprising: forming a high dielectric or ferroelectric film on a top surface of the platinum film.
Claim 16
Dependent Claim
25 words
The method of claim 14, wherein the functional intermediate film is a diffusion barrier layer, a conductive plug, an adhesion layer, or an insulation layer.
Claim 17
Dependent Claim
56 words
The method of claim 15, wherein the functional intermediate film is a conductive plug and is formed from a material selected from the group consisting of TiN, zirconium nitride, titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide, nickel silicide, cobalt silicide, tantalum carbide, tantalum boride, polysilicon, germanium, W, Ta, Ti, Mo, TiW, boron carbide, and Cu.
Claim 18
Dependent Claim
78 words
The method of claim 15, wherein the functional intermediate film is a diffusion barrier layer and is formed from a material selected from the group consisting of ternary component amorphous materials (Ti--Si--N, Ta--B--N, Ti--B--N), conductive nitride, titanium aluminum nitride, Zr nitride, Hf nitride, Y nitride, Se nitride, La nitride, rare earth nitride, N deficient Al nitride, doped Al nitride, Mg nitride, Ca nitride, Sr nitride, Ba nitride, TiN, GaN, Ni nitride, Ta nitride, Co nitride, and W nitride.
Claim 19
Dependent Claim
46 words
The method of claim 15, wherein the functional intermediate film is an adhesion layer and is formed from a material selected from the group consisting of TiN, W, Ta, Ti, Sn, Ru, In, Ir, Os, Rh, and a silicide compound (Ni silicide, Co silicide, W silicide).
Claim 20
Dependent Claim
39 words
The method of claim 14, wherein the first thickness part is formed to an extent that it can prevent the diffusion of the oxygen which can be introduced into the platinum film during the second thickness part depositing step.
Claim 21
Dependent Claim
29 words
The method of claim 14, wherein the thickness of the first thickness platinum part is 5 to 50% of the total thickness of the platinum film to be deposited.
Claim 22
Dependent Claim
80 words
The method of claim 20, wherein the preferred orientation of the platinum film is controlled by changing at least one of: partial pressure ratios of oxygen, nitrogen and the mixture thereof to the entire gas in the atmosphere employed in depositing the second thickness part of the platinum film; the temperature of the substrate during the deposition step; annealing temperature; and the ratio of the thickness of the first thickness platinum part to the total thickness of the platinum film.
Claim 23
Dependent Claim
21 words
The method of claim 14, wherein the inert gas is selected from the group consisting of Ar, Ne, Kr, and Xe.
Claim 24
Dependent Claim
20 words
The method of claim 14, wherein the temperature of the substrate during the deposition step does not exceed 500° C.
Claim 25
Dependent Claim
14 words
The method of claim 14, wherein the annealing temperature does not exceed 700° C.
Claim 26
Dependent Claim
36 words
The method of claim 14, wherein the depositing of platinum film is performed using DC/RF sputtering, DC/RF magnetron sputtering, metal organic chemical vapor deposition, vacuum evaporation deposition, laser ablation deposition, partially ionized beam deposition, or electroplating.
Claim 27
Dependent Claim
88 words
The method of claim 14, wherein the substrate is formed from a material selected from the group consisting of silicon (Si), germanium (Ge), and diamond (C); compound materials selected from the group consisting of GaAs, InP, SiGe, and SiC; ceramic single crystal (SrTiO 3 , LaAlO 3 , sapphire, KBr, NaCl, ZrO 2 , Si 3 N 4 , TiO 2 , Ta 2 O 5 , AlN) or poly-crystals thereof; metal (Au, Ag, Al, Ir, Pt, Cu, Pd, Ru, W); and amorphous/glassy materials (BSG, PSG, BPSG, Si).
Claim 28
Dependent Claim
56 words
The method of claim 14, wherein an insulation is formed between the substrate and the functional intermediate film, and the insulation layer is selected from the group consisting of SiO 2 , Si 3 N 4 , BPSG, MgO, CaO, CaF 2 , Al 2 O 3 , B 2 O 3 , BSG, and PSG.
Claim 29
Dependent Claim
233 words
The method of claim 14, the high-dielectric or ferroelectric material is formed from a material selected from the group consisting of perovskite structure oxides {BT(BaTiO 3 ), BST(Ba 1-x Sr x TiO 3 ), ST(SrTiO 3 ), PT(PbTiO 3 ), PZT(Pb(Zr, Ti)O 3 ), PLT(Pb 1-x La x TiO 3 ), PLZT(Pb 1-x La x )(Zr y Ti z ) 1-x/4 O 3 ), PMN(PbMg 1/3 Nb 2/3 O 3 ), LiNbO 3 , LiTaO 3 , KNbO 3 , K(Ta, Nb)O 3 , CaTiO 3 , SrSnO 3 , NaNbO 3 , LaAlO 3 , YAlO 3 , KMGF 3 )}, bismuth-layered perovskite structure oxides {SrBi 2 Nb 2 O 9 , SrBi 2 Ti 2 O 9 , SrBi 2 Ta 2 O 9 , SrBi 2 (Ta x Nb 1-x ) 2 O 9 , Bi 4 Ti 3 O 12 }, tungsten-bronze type structure oxides {Sr 1-x Ba x Nb 2 O 6 , (Sr, Ba) 0 .8 R x Na 0 .4 Nb 2 O 6 (R,Cr,Zn,Y), (Pb,Ba)Nb 2 O 6 , (K,Sr)Nb 2 O 6 , (Pb,K)Nb 2 O 6 , Pb 2 KNb 5 O 15 , K 3 Li 2 Nb 5 O 15 , K, Na) 3 Li 2 Nb 5 O 15 , K 2 BiNb 5 O 15 ), ReMnO 3 Re: rear-earth element), and BaMF 4 (M:Mn, Co, Ni, Mg, Zn)}.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-04-25 | 2003-10-25 | 2004-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-25 | 2007-10-25 | 2008-04-25 | $3760.00 | Window Closed / Lapsed |
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