Abstract In order to provide a pattern of conductive platinum silicide on a silicon substrate, a layer of platinum is deposited in an atmosphere having a vacuum of 10 -8 Torr or less on a silicon substrate which was previously provided with selected oxide regions. This prevents oxygen from contaminating the deposited platinum layer. The substrate is then annealed for the first time in an atmosphere of 10 -8 Torr or less to form a platinum silicide pattern in regions in which the deposited platinum directly contacts the silicon substrate. The substrate is then annealed for a second time in an atmosphere oxygen to form a protective oxide layer over the silicide. Next the unreacted platinum deposited on the oxide regions is electively removed by an aqua regia wet etch.
A method of providing a pattern of conductive platinum silicide on a silicon substrate having selective oxide regions comprising in the following order the steps of: (a) depositing a layer of platinum in an atmosphere having a vacuum of 10 -8 Torr or less on a silicon substrate; (b) annealing for the first time, the substrate at a temperature of between about 250°-800° C. in an atmosphere of 10 -8 Torr or less to form a platinum silicide in regions in which the deposited platinum directly contacts silicon; (c) annealing for the second time, the substrate in an atmosphere having oxygen to form a protective oxide layer over the silicide; and (d) selectively removing the unreacted platinum deposited on the oxide regions by an aqua regia wet etch.
Claim 2
Independent Claim
128 words
A method of providing a pattern of conductive platinum silicide on a silicon substrate having selective oxide regions comprising in the following order the steps of: (a) depositing a layer of platinum in an atmosphere having a vacuum of 10 -8 Torr or less on a silicon substrate; (b) annealing for the first time, the substrate at a temperature of between about 250°-800° C. in an atmosphere of 10 -8 Torr or less to form a platinum silicide in regions in which the deposited platinum directly contacts silicon; (c) annealing for the second time, the substrate in an atmosphere having oxygen to form a protective oxide layer over the silicide; and (d) selectively removing the unreacted platinum deposited on the oxide regions by an aqua regia wet etch.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein the aqua regia etch comprises three parts, by volume, hydrochloric acid, one part, by volume, nitric acid and four parts, by volume, deionized water.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein the oxide regions are etched using HF-containing chemicals to avoid plasma etch damage to the silicon surface.
Claim 5
Dependent Claim
20 words
The method of claim 1 wherein the platinum thickness is deposited at 90 Angstroms or less to improve infrared response.