US4590093A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a pattern of conductive material
Assignee: US Philips Corp
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Filing: 1984-10-05
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Granted: 1986-05-20
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Expires: 2004-10-05
Abstract
Abstract A method of providing narrow conductor tracks of metal silicide is provided. According to this technique, a pattern of polycrystalline silicon covered by a protective layer is converted along the edges into the silicide by covering the device with a metal. The edges are then silicidized laterally over a distance of 20 to 500 nm. The remaining silicon is selectively removed, and the tracks obtained can serve as conductor masks, such as, for example, a plate of a capacitor.
Inventors
- 👤 Pierre H. Woerlee
- 👤 Johannes F. C. M. Verhoeven
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 08:52
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D44/00; H10D44/01; H10D44/041; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10D64/0133; H10P; H10P30/00; H10P30/20; H10P30/22; H10P50/00; H10P50/71; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/947
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
68 words
A method of manufacturing a pattern of conductive material, in which a substrate is covered at least in part by a silicon layer, after which the silicon layer is converted at least along a part of its edge into conductive material and the remaining part of the silicon layer is removed by means of a selective removal treatment, characterized in that the conductive material comprises a metal silicide.
Claim 2
Independent Claim
68 words
A method of manufacturing a pattern of conductive material, in which a substrate is covered at least in part by a silicon layer, after which the silicon layer is converted at least along a part of its edge into conductive material and the remaining part of the silicon layer is removed by means of a selective removal treatment, characterized in that the conductive material comprises a metal silicide.
Claim 3
Dependent Claim
54 words
A method as claimed in claim 1, characterized in that the silicon layer is covered by a silicidation-preventing layer and in that, after the silicon covered by the silicidation-preventing layer has been patterned, the device is covered by a metal which forms along the edges of the silicon with the silicon a metal silicide.
Claim 4
Dependent Claim
34 words
A method as claimed in claim 1 or 2, characterized in that the silicon is converted into silicide from the edge over a distance of at least 20 nm and at most 500 nm.
Claim 5
Dependent Claim
15 words
A method as claimed in claim 3, characterized in the metal silicide is platinum silicide.
Claim 6
Dependent Claim
75 words
A method as claimed in claim 4, characterized in that the substrate comprises a semiconductor body, in which surface zones of a second conductivity type are formed in a surface zone of a first conductivity type, and in that, using the conductor track of metal silicide as a mask, impurities causing the second conductivity type are provided for forming said surface zones to obtain source and drain zones of at least a field effect transistor.
Claim 7
Dependent Claim
69 words
A method as claimed in claim 3, characterized in that there is provided a number of silicon tracks which are converted along their edges into metal silicide, which forms part of a first plate of a capacitor, after which at least the metal silicide is covered by a layer of dielectric material, which is covered by a metal layer which forms part of the second plate of the capacitor.
Claim 8
Dependent Claim
40 words
A method as claimed in claim 6, characterized in that the silicon tracks form parallel strips having a width of at most 2 μm, which are separated from each other by grooves having a width of at most 1 μm.
Claim 9
Dependent Claim
18 words
A method as claimed in claim 1 or 2, characterized in that the metal silicide is platinum silicide.
Claim 10
Dependent Claim
77 words
A method as claimed in claim 1 or 2, characterized in that the substrate comprises a semiconductor body, in which surface zones of a second conductivity type are formed in a surface zone of a first conductivity type, and in that, using the conductor track of metal silicide as a mask, impurities causing the second conductivity type are provided for forming said surface zones to obtain source and drain zones of at least a field effect transistor.
Claim 11
Dependent Claim
71 words
A method as claimed in claim 1 or 2, characterized in that there is provided a number of silicon tracks which are converted along their edges into metal silicides, which forms part of a first plate of a capacitor, after which at least the metal silicide is covered by a layer of dielectric material, which is covered by a metal layer which forms part of the second plate of the capacitor.
Claim 12
Dependent Claim
40 words
A method as claimed in claim 10, characterized in that the silicon tracks form parallel strips having a width of at most 2 μm, which are separated from each other by grooves having a width of at most 1 μm.
References Cited (Backward Citations)
EP0052038A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-19 | 1989-11-18 | 1990-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-19 | 1993-11-18 | 1994-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-19 | 1997-11-18 | 1998-05-20 | $7700.00 | Window Closed / Lapsed |