US5331187A
Expired / Lapsed
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Ferroelectric thin film element with (III) orientation
Assignee: Murata Manufacturing Co Ltd
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Filing: 1993-02-22
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Granted: 1994-07-19
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Expires: 2013-02-22
Abstract
Abstract A ferroelectric thin film element constructed by forming a first electrode composed of an alloy thin film of a Ni-Cr-Al system or Ni-Al system on a substrate and forming a ferroelectric thin film composed of a ferroelectric material having a composition having a spontaneous axis in the direction (111) and having a crystal orientation in the direction (111) on the first electrode composed of a thin film.
Inventors
- 👤 Toshio Ogawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:59
CPC Classifications
H; H10; H10N; H10N15/00; H10N15/10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/689
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
79 words
A ferroelectric thin film element comprising: a substrate; an electrode formed on said substrate and composed of an alloy thin film in which the alloy is selected from the group consisting of the Ni-Cr-Al system and the Ni-Al system; and a ferroelectric thin film formed on said electrode and having a crystal orientation in the direction (111), said ferroelectric thin film being composed of a ferroelectric material having a composition with a spontaneous polarization axis in the direction (111).
Claim 2
Dependent Claim
79 words
A ferroelectric thin film element comprising: a substrate; an electrode formed on said substrate and composed of an alloy thin film in which the alloy is selected from the group consisting of the Ni-Cr-Al system and the Ni-Al system; and a ferroelectric thin film formed on said electrode and having a crystal orientation in the direction (111), said ferroelectric thin film being composed of a ferroelectric material having a composition with a spontaneous polarization axis in the direction (111).
Claim 3
Dependent Claim
29 words
The ferroelectric thin film element according to chain 1, wherein said ferroelectric material has a composition of a rhombohedral phase of ferroelectric ceramics of a lead titanate zirconate system.
Claim 4
Dependent Claim
29 words
The ferroelectric thin film element according to chain 1, wherein said ferroelectric material has a composition of a rhombohedral phase of ferroelectric ceramics of a lead titanate zirconate system.
Claim 5
Dependent Claim
115 words
The ferroelectric thin film element according to claim 1, wherein said ferroelectric material is selected from the group consisting of Pb(Zn 1/3 Nb 2/3 )O 3 , Pb(Sc 1/2 Nb 1/2 )O 3 , Pb(Na 1/2 B 1/2 )O 3 , a two-component system composed of PbTiO 3 and one selected from Pb(Zn 1/3 Nb 2/3 )O 3 , Pb(Sc 1/2 Nb 1/2 )O 3 and Pb(Na 1/2 Bi 1/2 )O 3 , and a three-component system composed of lead titanate zirconate and two selected from Pb(Mg 1/3 Nb 2/3 )O 3 , Pb(Mn 1/3 Nb 2/3 )O 3 , Pb(Ni 1/3 Nb 2/3 )O 3 and Pb(Mg 1/2 W 1/2 ) O 3 .
Claim 6
Dependent Claim
22 words
The ferroelectric thin film element according to claim 1, wherein said substrate is a substrate composed of a (100) MgO single crystal.
Claim 7
Dependent Claim
26 words
The ferroelectric thin film element according to claim 1, wherein said substrate is a substrate composed of a Si wafer with a MgO single crystal film.
Claim 8
Dependent Claim
23 words
The ferroelectric thin film element according to claim 1, wherein said electrode is composed of an alloy thin film of a Ni-Cr-Al system.
Claim 9
Dependent Claim
23 words
The ferroelectric thin film element according to claim 1, wherein said electrode is composed of an alloy thin film of a Ni-Al system.
References Cited (Backward Citations)
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