US5793057A
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Conductive amorphous-nitride barrier layer for high dielectric-constant material electrodes
Assignee: Texas Instruments Inc
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Filing: 1995-06-07
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Granted: 1998-08-11
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Expires: 2015-06-07
Abstract
Abstract A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an amorphous nitride barrier layer (e.g. Ti--Si--N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the amorphous nitride layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The amorphous nitride barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
Inventors
- 👤 Scott R. Summerfelt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 11:56
CPC Classifications
H; H10; H10B; H10B12/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/692
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
62 words
A microelectronic structure comprising: an oxidizable layer, wherein said oxidizable layer is substantially conductive and unoxidized; a ternary or greater amorphous nitride layer overlying said oxidizable layer; an oxygen stable layer overlying said amorphous nitride layer; and a layer of a high-dielectric-constant material overlying said oxygen stable layer, whereby the amorphous nitride layer substantially inhibits diffusion of oxygen to the oxidizable layer.
Claim 2
Dependent Claim
62 words
A microelectronic structure comprising: an oxidizable layer, wherein said oxidizable layer is substantially conductive and unoxidized; a ternary or greater amorphous nitride layer overlying said oxidizable layer; an oxygen stable layer overlying said amorphous nitride layer; and a layer of a high-dielectric-constant material overlying said oxygen stable layer, whereby the amorphous nitride layer substantially inhibits diffusion of oxygen to the oxidizable layer.
Claim 3
Dependent Claim
13 words
The structure of claim 1, wherein said amorphous nitride layer is partially oxidized.
Claim 4
Dependent Claim
12 words
The structure of claim 1, wherein said amorphous nitride layer comprises Ti--Si--N.
Claim 5
Dependent Claim
24 words
The structure of claim 1, wherein said amorphous nitride layer is selected from the group consisting of: Ti--Si--N, Ta--Si--N, Ta--B--N, Ti--B--N, and combinations thereof.
Claim 6
Dependent Claim
16 words
The structure of 1, said structure further comprising an upper electrode overlying said high-dielectric-constant material layer.
Claim 7
Dependent Claim
16 words
The structure of 1, said structure further comprising an upper electrode overlying said high-dielectric-constant material layer.
Claim 8
Dependent Claim
40 words
The structure of claim 5, wherein said upper electrode is selected from the group consisting of: tungsten, tungsten nitride, titanium, titanium nitride, ruthenium dioxide, YBa 2 Cu 3 O 7-x , platinum, palladium, rhodium, gold, iridium, silver, and combinations thereof.
Claim 9
Dependent Claim
21 words
The structure of claim 1, further comprising an oxygen stable sidewall adjacent said amorphous nitride layer and said oxygen stable layer.
Claim 10
Dependent Claim
45 words
The structure of claim 1, wherein said oxidizable layer is selected from the group consisting of: tantalum, tungsten, titanium, molybdenum, titanium nitride, zirconium nitride, titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide, tantalum carbide, titanium boride, boron carbide, silicon, germanium, carbon, GaAs, and combinations thereof.
Claim 11
Dependent Claim
49 words
The structure of claim 1, wherein said high-dielectric-constant material is selected from the group consisting of: barium strontium titanate, lead zirconate titanate, lead lanthanum titanate, lead lanthanum zirconate titanate, bismuth titanate, potassium tantalate, lead scandium tantalate, lead niobate, lead zinc niobate, potassium niobate, lead magnesium niobate, and combinations thereof.
Claim 12
Dependent Claim
10 words
The structure of claim 1, wherein stable layer comprises platinum.
Claim 13
Dependent Claim
38 words
The structure of claim 1, wherein said oxygen stable layer is selected from the group consisting of: platinum, palladium, rhenium, rhodium, ruthenium oxide, tin oxide, indium oxide, rhenium oxide, osmium oxide, rhodium oxide, iridium oxide, and combinations thereof.
Claim 14
Dependent Claim
38 words
A microelectronic structure, said structure comprising: (a) a TiN layer; (b) a Ti--Si--N layer overlying said TiN layer; (c) a Pt layer overlying said Ti--Si--N layer; and (d) a high dielectric constant material layer overlying said Pt layer.
Claim 15
Dependent Claim
38 words
A microelectronic structure, said structure comprising: (a) a TiN layer; (b) a Ti--Si--N layer overlying said TiN layer; (c) a Pt layer overlying said Ti--Si--N layer; and (d) a high dielectric constant material layer overlying said Pt layer.
Claim 16
Dependent Claim
17 words
The structure of claim 12, further comprising an upper electrode overlying said high dielectric constant material layer.
Claim 17
Dependent Claim
16 words
The structure of claim 13, wherein said high dielectric constant material layer is barium strontium titanate.
References Cited (Backward Citations)
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