EP0404295A1
Expired / Lapsed
EP
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Method for fabricatinf integrated circuit capacitors
Assignee: Ramtron International Corp
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Filing: 1990-03-21
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Granted: —
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Expires: 2010-03-21
Abstract
Abstract Disclosed is a multilayer capacitor structure in an integrated circuit, including a first electrode constructed by forming at least one layer over a substrate and forming a plate layer over the previous layer(s). A dielectric layer is formed over this first electrode, and a second electrode is established over the dielectric layer by forming a plate layer over the dielectric layer, and forming at least one additional layer over the plate layer. Each layer may serve one or more functions. Also disclosed is a further embodiment including constructing a first electrode by forming at least one layer on a substrate, forming a plate layer over the previous layer(s), and forming a dielectric layer over the first electrode. The resulting structure is then heated, preferably in an oxygen ambient, to oxidize the lower layer. A second electrode can then be formed over the dielectric layer.
Inventors
- 👤 William L. Larson
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 20:02
CPC Classifications
H; H10; H10B; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D64/00; H10D64/60; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
47 words
A method for fabricating a capacitor on a substrate for an integrated circuit, including forming first and second electrodes separated by a dielectric material, including forming multiple layers for one of said electrodes, one of said multiple layers comprising a plate layer adjacent to said dielectric layer.
Claim 2
Independent Claim
47 words
A method for fabricating a capacitor on a substrate for an integrated circuit, including forming first and second electrodes separated by a dielectric material, including forming multiple layers for one of said electrodes, one of said multiple layers comprising a plate layer adjacent to said dielectric layer.
Claim 3
Dependent Claim
32 words
The method of claim 1 wherein said one electrode is formed by: establishing an adhesion layer, and establishing a plate layer adjacent to said dielectric layer and located over said adhesion layer.
Claim 4
Dependent Claim
30 words
The method of claim 2 wherein said establishing steps comprise establishing a lower layer and a plate layer thereover, and then reacting said lower layer to form said adhesion layer.
Claim 5
Independent Claim
101 words
A method for fabricating a multilayer electrode capacitor on an integrated circuit comprising the steps of: constructing a first multilayer electrode including the steps of (a) forming an adhesion layer on a substrate, (b) forming a diffusion barrier on said adhesion layer, (c) forming an electrical conductor on said diffusion barrier, and (d) forming a plate and nucleation layer on said electrical conductor; constructing a second multilayer electrode by (a) forming a second plate layer on said dielectric, (b) forming a second diffusion barrier on said second electrode, and (c) forming a second electrical conductor layer on said second diffusion barrier.
Claim 6
Independent Claim
101 words
A method for fabricating a multilayer electrode capacitor on an integrated circuit comprising the steps of: constructing a first multilayer electrode including the steps of (a) forming an adhesion layer on a substrate, (b) forming a diffusion barrier on said adhesion layer, (c) forming an electrical conductor on said diffusion barrier, and (d) forming a plate and nucleation layer on said electrical conductor; constructing a second multilayer electrode by (a) forming a second plate layer on said dielectric, (b) forming a second diffusion barrier on said second electrode, and (c) forming a second electrical conductor layer on said second diffusion barrier.
Claim 7
Dependent Claim
33 words
A capacitor for an integrated circuit comprising: first and second electrodes a dielectric located between said electrodes; one of said electrodes comprising a plate layer adjacent to said dielectric and a further layer.
Claim 8
Dependent Claim
33 words
A capacitor for an integrated circuit comprising: first and second electrodes a dielectric located between said electrodes; one of said electrodes comprising a plate layer adjacent to said dielectric and a further layer.
Claim 9
Dependent Claim
13 words
The capacitor of claim 5 wherein said further layer comprises a diffusion barrier.
Claim 10
Dependent Claim
14 words
The capacitor of claim 5 wherein said further layer comprises an electrical contact layer.
Claim 11
Dependent Claim
13 words
The capacitor of claim 5 wherein said further layer comprises an adhesion layer.
Claim 12
Dependent Claim
17 words
The capacitor of claim 5 wherein said one electrode comprises a plate layer and two further layers.
Claim 13
Dependent Claim
15 words
The capacitor of cliam 9 wherein said one electrode comprises at least three distinct layers.
Claim 14
Dependent Claim
15 words
The capacitor of cliam 9 wherein said one electrode comprises at least three distinct layers.
Claim 15
Dependent Claim
21 words
The capacitor of claim 10 wherein the other of said electrodes comprises a second plate layer and a second further layer.
Claim 16
Dependent Claim
23 words
The capacitor of claim 10 wherein one said electrode comprises said plate layer, an electrical contact layer, an adhesion layer and diffusion barrier.
Claim 17
Dependent Claim
28 words
The capacitor of claim 5 comprising: an adhesion layer on a substrate; a diffusion barrier and an electrical contact both located between said plate layer and said substrate.
Claim 18
Dependent Claim
20 words
The capacitor of claim 5 wherein said one electrode further layer includes an electrical contact layer and a diffusion barrier.
Claim 19
Dependent Claim
10 words
The capacitor of claim 14 further including an adhesion layer.
Claim 20
Dependent Claim
14 words
The capacitor of claim 5 wherein said further layer includes titanium or tinanium nitride.
Claim 21
Dependent Claim
48 words
A capacitor for an integrated circuit comprising: first and second electrodes; a dielectric located between said electrodes; one of said electrodes comprising a plate layer adjacent to said dielectric and a further layer, wherein said further layer comprises a layer of titanium and a layer of titanium nitride.
Claim 22
Dependent Claim
48 words
A capacitor for an integrated circuit comprising: first and second electrodes; a dielectric located between said electrodes; one of said electrodes comprising a plate layer adjacent to said dielectric and a further layer, wherein said further layer comprises a layer of titanium and a layer of titanium nitride.
Claim 23
Dependent Claim
15 words
The capacitor of Claim 17 wherein said further layer further includes a layer of aluminum.
Claim 24
Independent Claim
72 words
A method for fabricating a capacitor on an integrated circuit including the steps of forming first and second electrodes separated by a dielectric material, wherein one of said electrodes is constructed by (a) forming at least one layer, (b) forming a plate layer on said one layer, and (c) oxidizing said one electrode whereby said at least one layer is oxidized, and wherein said plate layer is adjacent to said dielectric layer.
Claim 25
Independent Claim
72 words
A method for fabricating a capacitor on an integrated circuit including the steps of forming first and second electrodes separated by a dielectric material, wherein one of said electrodes is constructed by (a) forming at least one layer, (b) forming a plate layer on said one layer, and (c) oxidizing said one electrode whereby said at least one layer is oxidized, and wherein said plate layer is adjacent to said dielectric layer.
Claim 26
Dependent Claim
55 words
The method of claim 19 wherein the other one of said electrodes is constructed by the steps of: (a) forming a second plate layer, (b) forming at least one further layer, and (c) oxidizing said other electrode whereby said further layer is oxidized, and wherein said second plate layer is adjacent to said dielectric layer.
References Cited (Backward Citations)
No citation records indexed.
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