US5514484A
Expired / Lapsed
US
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Oriented ferroelectric thin film
Assignee: EpiPhotonics Corp
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Filing: 1993-10-19
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Granted: 1996-05-07
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Expires: 2013-10-19
Abstract
Abstract An orientative ferroelectric thin film has such a structure that an epitaxial or orientative buffer layer having a double layer structure constituted by two layers is formed on a semiconductor single crystal (100) substrate, and an epitaxial or orientative perovskite ABO3 type ferroelectric thin film is further formed on the buffer layer. The epitaxial or orientative buffer layer has a structure in which a perovskite ABO3 type thin film is formed on an MgO thin film. Also, an orientative ferroelectric thin film has such a structure that an opitaxial MgO buffer layer is formed on a single crystal Si (100) substrate, and an epitaxial or orientative perovskite ABO3 type ferroelectric thin film is formed on the buffer layer.
Inventors
- 👤 Keiichi Nashimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 02:08
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; C; C04; C04B; C04B35/00; C04B35/01; C04B35/46; C04B35/462; C04B35/495; Y; Y10; Y10S; Y10S505/00; Y10S505/825; Y10S505/873
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
93 words
An oriented ferroelectric thin film, comprising: a semiconductor single crystal (100) substrate; an epitaxial or oriented buffer layer formed on said semiconductor single crystal (100) substrate wherein said epitaxial or oriented buffer layer has a structure in which a buffer thin film having a perovskite ABO 3 structure is formed on an MgO thin film; and an epitaxial or oriented ferroelectric thin film having a perovskite ABO 3 structure formed on said buffer thin film of said buffer layer, wherein said ferroelectric thin film is a different material than said buffer thin film.
Claim 2
Dependent Claim
93 words
An oriented ferroelectric thin film, comprising: a semiconductor single crystal (100) substrate; an epitaxial or oriented buffer layer formed on said semiconductor single crystal (100) substrate wherein said epitaxial or oriented buffer layer has a structure in which a buffer thin film having a perovskite ABO 3 structure is formed on an MgO thin film; and an epitaxial or oriented ferroelectric thin film having a perovskite ABO 3 structure formed on said buffer thin film of said buffer layer, wherein said ferroelectric thin film is a different material than said buffer thin film.
Claim 3
Dependent Claim
69 words
An oriented ferroelectric thin film according to claim 1, wherein said epitaxial or oriented ferroelectric thin film having a perovskite ABO 3 structure consists essentially of one member selected from the group consisting of BaTiO 3 , PbTiO 3 , Pb 1-x La x (Zr 1-y Ti y ) 1- (x/4) O 3 where 0≦x,y≦1, LiNbo 3 , KNbO 3 , and Bi 4 Ti 3 O 12 .
Claim 4
Dependent Claim
26 words
An oriented ferroelectric thin film according to claim 1, wherein said buffer thin film having a perovskite ABO 3 structure consists essentially of SrTiO 3 .
Claim 5
Dependent Claim
61 words
An oriented ferroelectric thin film according to claim 1, wherein said buffer thin film having a perovskite ABO 3 structure of said epitaxial or oriented buffer layer has a lattice constant closer to an a-axis of said ferroelectric thin film having a perovskite ABO 3 structure than to a c-axis of said ferroelectric thin film having a perovskite ABO 3 structure.
Claim 6
Dependent Claim
45 words
An oriented ferroelectric thin film according to claim 1, wherein a crystallographic relationship among said single crystal substrate, said buffer layer and said ferroelectric thin film having a perovskite ABO 3 structure is expressed by ABO 3 (001)//ABO 3 (100)//MgO (100)// semiconductor single crystal (100).
Claim 7
Dependent Claim
46 words
An oriented ferroelectric thin film, comprising: a single crystal Si (100) substrate; an epitaxial MgO (100) buffer layer formed on said single crystal Si (100) substrate; and an epitaxial or oriented ferroelectric thin film having a perovskite ABO 3 (001) structure formed on said buffer layer.
Claim 8
Dependent Claim
46 words
An oriented ferroelectric thin film, comprising: a single crystal Si (100) substrate; an epitaxial MgO (100) buffer layer formed on said single crystal Si (100) substrate; and an epitaxial or oriented ferroelectric thin film having a perovskite ABO 3 (001) structure formed on said buffer layer.
Claim 9
Dependent Claim
69 words
An oriented ferroelectric thin film according to claim 6, wherein said epitaxial or oriented ferroelectric thin film having a perovskite ABO 3 structure consists essentially of a member selected from the group consisting of BaTiO 3 , PbTiO 3 , Pb 1-x La x (Zr 1-y Ti y ) 1- (x/4) O 3 where 0≦x,y≦1, LiNbo 3 , KNbO 3 , and Bi 4 Ti 3 O 12 .
Claim 10
Dependent Claim
34 words
An oriented ferroelectric thin film according to claim 6, wherein crystallographic relationship between said single crystal Si (100) substrate and said epitaxial MgO buffer layer is expressed by MgO 001!//Si 001! in intra-surface orientation.
Claim 11
Dependent Claim
93 words
An oriented ferroelectric thin film, comprising: a single crystal Si (100) substrate; an epitaxial MgO buffer layer formed on said single crystal Si (100) substrate; and an epitaxial or oriented ferroelectric thin film having a perovskite ABO 3 structure formed on said buffer layer wherein a crystallographic relationship between said epitaxial MgO buffer layer and said epitaxial or oriented ferroelectric thin film having a perovskite ABO 3 structure is expressed by ABO 3 (001)//MgO (100) or ABO 3 (100)//MgO (100), and ABO 3 (010)//MgO (001), or ABO 3 (001)//MgO (001) in intra-surface orientation.
Claim 12
Dependent Claim
93 words
An oriented ferroelectric thin film, comprising: a single crystal Si (100) substrate; an epitaxial MgO buffer layer formed on said single crystal Si (100) substrate; and an epitaxial or oriented ferroelectric thin film having a perovskite ABO 3 structure formed on said buffer layer wherein a crystallographic relationship between said epitaxial MgO buffer layer and said epitaxial or oriented ferroelectric thin film having a perovskite ABO 3 structure is expressed by ABO 3 (001)//MgO (100) or ABO 3 (100)//MgO (100), and ABO 3 (010)//MgO (001), or ABO 3 (001)//MgO (001) in intra-surface orientation.
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