US5323023A
Expired / Lapsed
US
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Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors
Assignee: Xerox Corp
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Filing: 1992-12-02
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Granted: 1994-06-21
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Expires: 2012-12-02
Abstract
Abstract An article of manufacture having an epitaxial (111) magnesium oxide (MgO) layer, suitable for use as a buffer layer, on a (111) surface of a tetrahedral semiconductor substrate, and method for its manufacture is described. The article may further include an epitaxial oxide overlayer on the (111) MgO layer. The overlayer may be a conducting, superconducting, and/or ferroelectric oxide layer. The method of producing the epitaxial (111) magnesium oxide (MgO) layer on the (111) surface of a tetrahedral semiconductor substrate proceeds at low temperature. The method may further include steps for forming the epitaxial oxide layer on the (111) MgO layer. The methods include the steps of preparing the (111) surface of a tetrahedral semiconductor substrate for deposition and the low temperature depositing of an MgO layer on the prepared surface. Further steps may include the depositing of the oxide layer over the MgO layer.
Inventors
- 👤 David K. Fork
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:08
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/13; G02B6/131; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632; H10P14/63; H10P14/6326; H10P14/6349; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/703; Y10S505/825; Y10S505/873
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
21 words
A structure comprising: a (111) oriented tetrahedral compound semiconductor substrate; and a layer of epitaxial (111) magnesium oxide on said substrate.
Claim 2
Dependent Claim
21 words
A structure comprising: a (111) oriented tetrahedral compound semiconductor substrate; and a layer of epitaxial (111) magnesium oxide on said substrate.
Claim 3
Dependent Claim
31 words
The structure of claim 1, wherein said substrate is a compound of at least one element from column III and at least one element from column V of the periodic table.
Claim 4
Dependent Claim
34 words
The structure of claim 2 wherein said substrate is selected from the group consisting of AlAs, AlSb, AlP, GaAs, GaP, GaSb, InP, InAs, InSb, AlGaP, AlInP, AlGaAs, AlInAs, AlAsSb, GaInAs, GaInSb, GaAsSb, and InAsSb.
Claim 5
Dependent Claim
11 words
The structure of claim 1, wherein said substrate is cubic SiC.
Claim 6
Dependent Claim
33 words
The structure of claim 1, wherein said substrate is a compound of at least one element selected from column II and at least one element selected from column VI of the periodic table.
Claim 7
Dependent Claim
24 words
The structure of claim 5 wherein said substrate is selected from the group consisting of ZnS, ZnSe, ZnTe, CdSe, CdTe, HgSe, HgTe, and CdS.
Claim 8
Dependent Claim
18 words
The structure of claim 1, further including an oxide overlayer formed on said epitaxial layer of magnesium oxide.
Claim 9
Dependent Claim
13 words
The structure of claim 7, wherein the oxide overlayer is conducting or superconducting.
Claim 10
Dependent Claim
13 words
The structure of claim 7, wherein the material of said overlayer is epitaxial.
Claim 11
Dependent Claim
62 words
The structure of claim 9 wherein said overlayer is selected from the group consisting of BaTiO 3 , PbTiO 3 , PbLaTiO 3 , Pb(ZrTi)O 3 , (Pb,La)(Zr,Ti)O 3 , SrTiO 3 , KNbO 3 , KTaO 3 , NaNbO 3 , NaTaO 3 , LiNbO 3 , LiTaO 3 , CaTiO 3 , LaAlO 3 , NaTaO 3 , and YBCO.
Claim 12
Dependent Claim
29 words
A structure comprising: a GaAs (111) substrate; a layer of epitaxial (111) magnesium oxide on said substrate; and an epitaxial overlayer formed on said layer of epitaxial magnesium oxide.
Claim 13
Dependent Claim
29 words
A structure comprising: a GaAs (111) substrate; a layer of epitaxial (111) magnesium oxide on said substrate; and an epitaxial overlayer formed on said layer of epitaxial magnesium oxide.
Claim 14
Dependent Claim
11 words
The structure of claim 11, wherein said epitaxial overlayer is superconducting.
Claim 15
Dependent Claim
11 words
The structure of claim 12, wherein said epitaxial overlayer is YBCO.
Claim 16
Dependent Claim
11 words
The structure of claim 11, wherein said epitaxial overlayer is ferroelectric.
Claim 17
Dependent Claim
53 words
The structure of claim 14, wherein said epitaxial overlayer is selected from the group consisting of LiNbO 3 , LiTaO 3 , BaTiO 3 , PbTiO 3 , PbLaTiO 3 , Pb(ZrTi)O 3 , (Pb,La)(Zr,Ti)O 3 , SrTiO 3 , KNbO 3 , KTaO 3 , NaNbO 3 , and NaTaO 3 .
Claim 18
Dependent Claim
29 words
A structure comprising: a Ge (111) substrate; a layer of epitaxial (111) magnesium oxide on said substrate; and an epitaxial overlayer formed on said layer of epitaxial magnesium oxide.
Claim 19
Dependent Claim
29 words
A structure comprising: a Ge (111) substrate; a layer of epitaxial (111) magnesium oxide on said substrate; and an epitaxial overlayer formed on said layer of epitaxial magnesium oxide.
Claim 20
Dependent Claim
11 words
The structure of claim 16, wherein said epitaxial overlayer is superconducting.
Claim 21
Dependent Claim
11 words
The structure of claim 16, wherein said epitaxial overlayer is ferroelectric.
Claim 22
Dependent Claim
53 words
The structure of claim 18, wherein said epitaxial overlayer is selected from the group consisting of LiNbO 3 , LiTaO 3 , BaTiO 3 , PbTiO 3 , PbLaTiO 3 , Pb(ZrTi)O 3 , (Pb,La)(Zr,Ti)O 3 , SrTiO 3 , KNbO 3 , KTaO 3 , NaNbO 3 , and NaTaO 3 .
Claim 23
Dependent Claim
29 words
A structure comprising: a diamond (111) substrate; a layer of epitaxial (111) magnesium oxide on said substrate; and an epitaxial overlayer formed on said layer of epitaxial magnesium oxide.
Claim 24
Dependent Claim
29 words
A structure comprising: a diamond (111) substrate; a layer of epitaxial (111) magnesium oxide on said substrate; and an epitaxial overlayer formed on said layer of epitaxial magnesium oxide.
Claim 25
Dependent Claim
11 words
The structure of claim 20, wherein said epitaxial overlayer is superconducting.
Claim 26
Dependent Claim
11 words
The structure of claim 20, wherein said epitaxial overlayer is ferroelectric.
Claim 27
Dependent Claim
53 words
The structure of claim 22, wherein said epitaxial overlayer is selected from the group consisting of LiNbO 3 , LiTaO 3 , BaTiO 3 , PbTiO 3 , PbLaTiO 3 , Pb(ZrTi)O 3 , (Pb,La)(Zr,Ti)O 3 , SrTiO 3 , KNbO 3 , KTaO 3 , NaNbO 3 , and NaTaO 3 .
Claim 28
Dependent Claim
38 words
A structure comprising: a (111) oriented tetrahedral compound semiconductor substrate; and a layer of epitaxial (111) magnesium oxide on said substrate and having a crystallographic axis aligned with at least one of the crystallographic axes of said substrate.
Claim 29
Dependent Claim
38 words
A structure comprising: a (111) oriented tetrahedral compound semiconductor substrate; and a layer of epitaxial (111) magnesium oxide on said substrate and having a crystallographic axis aligned with at least one of the crystallographic axes of said substrate.
Claim 30
Dependent Claim
31 words
The structure of claim 24, wherein said substrate is a compound of at least one element from column III and at least one element from column V of the periodic table.
Claim 31
Dependent Claim
37 words
The structure of claim 25 wherein said substrate is comprised of material selected from the group consisting of AlAs, AlSb, AlP, GaAs, GaP, GaSb, InP, InAs, InSb, AlGaP, AlInP, AlGaAs, AlInAs, AlAsSb, GaInAs, GaInSb, GaAsSb, and InAsSb.
Claim 32
Dependent Claim
11 words
The structure of claim 24, wherein said substrate in cubic SiC.
Claim 33
Dependent Claim
33 words
The structure of claim 24, wherein said substrate is a compound of at least one element selected from column II and at least one element selected from column VI of the periodic table.
Claim 34
Dependent Claim
27 words
The structure of claim 28 wherein said substrate is comprised of material selected from the group consisting of ZnS, ZnSe, ZnTe, CdSe, CdTe, HgSe, HgTe, and CdS.
Claim 35
Dependent Claim
19 words
The structure of claim 24, further including an oxide overlayer formed on said epitaxial (111) layer of magnesium oxide.
Claim 36
Dependent Claim
65 words
The structure of claim 30 wherein said overlayer is comprised of material selected from the group consisting of BaTiO 3 , PbTiO 3 , PbLaTiO 3 , Pb(ZrTi)O 3 , (Pb,La)(Zr,Ti)O 3 , SrTiO 3 , KNbO 3 , KTaO 3 , NaNbO 3 , NaTaO 3 , LiNbO 3 , LiTaO 3 , CaTiO 3 , LaAlO 3 , NaTaO 3 , and YBCO.
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