EP0304078A2
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EP
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Composite superconductor layer structure
Assignee: Panasonic Holdings Corp
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Filing: 1988-08-19
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Granted: —
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Expires: 2008-08-19
Abstract
Abstract A superconductive structure using an oxide superconductor material, featured by forming an oxide superconductor film on a semiconductor-film-coated substrate or a semiconductor substrate. It becomes possible to integrate the superconductive structure with a semiconductor device, affording varieties of practical uses and a high industrial value.
Inventors
- 👤 Takeshi Kamada
- 👤 Shinichiro Hatta
- 👤 Kentaro Setsune
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 08:07
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/087; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0408; H10N60/0576; H10N60/0632
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
88 words
A superconductor structure comprising: a substrate including at least a surface layer of semiconductor; an oxide superconductor film formed on said substrate and made of an oxide material containing composition a , composition b , and Cu where composition a is at least one species selected from the group consisting of Bi, Tl, Pb, Sc, Y and Lanthanide elements (atomic numbers 57 to 71), and composition b is at least one species of group IIa elements, and the molar ratio of the compositions a, b and Cu satisfy.
Claim 2
Dependent Claim
88 words
A superconductor structure comprising: a substrate including at least a surface layer of semiconductor; an oxide superconductor film formed on said substrate and made of an oxide material containing composition a , composition b , and Cu where composition a is at least one species selected from the group consisting of Bi, Tl, Pb, Sc, Y and Lanthanide elements (atomic numbers 57 to 71), and composition b is at least one species of group IIa elements, and the molar ratio of the compositions a, b and Cu satisfy.
Claim 3
Dependent Claim
30 words
A superconductor structure according to claim 1, wherein said surface layer is made of one selected from the group consisting of group II-VI compound semiconductors and the complex materials thereof.
Claim 4
Dependent Claim
30 words
A superconductor structure according to claim 1, wherein said surface layer is made of one selected from the group consisting of group III-V compound semiconductors and the complex materials thereof.
Claim 5
Dependent Claim
29 words
A superconductor structure according to claim 1, wherein said surface layer is made of a material selected from the group consisting of polycrystalline silicon and the complex materials thereof.
Claim 6
Dependent Claim
29 words
A superconductor structure according to claim 1, wherein said surface layer is made of a material selected from the group consisting of amorphous silicon and the complex materials thereof.
Claim 7
Dependent Claim
19 words
A superconductor structure according to claim 1, further comprising a film of semiconductor deposited on said oxide superconductor film.
Claim 8
Dependent Claim
19 words
A superconductor structure according to claim 6, further comprising another oxide superconductor film deposited on said film of semiconductor.
Claim 9
Dependent Claim
43 words
A superconductor structure according to claim 1, wherein said substrate includes a single crystal body and said surface layer of semiconductor formed of an epitaxial layer on said single crystal body, and said oxide superconductor film has strong orientation on the epitaxial layer.
Claim 10
Dependent Claim
44 words
A superconductor structure according to claim 1, wherein said substrate includes a single crystal body of at least one species selected from the group consisting of magnesium oxide (MgO), sapphire (α-Al₂O₃), spinel, strontium titanate (SrTiO₃), silicon, silicon compounds, gallium arsenide (GaAs), zirconium oxide (ZrO₂).
Claim 11
Dependent Claim
39 words
A superconductor structure according to claim 1, wherein said substrate includes a porcelain body of at least one species selected from the group consisting of alumina, magnesium oxide (MgO), zerconium oxide (ZrO₂), steatite, holstelite (2MgOSiO₂), berilia (BeO), and spinel.
Claim 12
Dependent Claim
28 words
A superconductor structure according to claim 8, wherein said single crystal body is a magnesium oxide single crystal body which has one of (100) planes and (110) planes.
Claim 13
Dependent Claim
26 words
A superconductor structure according to claim 8, wherein said single crystal body is a sapphire single crystal body which has one of R-planes, C-planes and a-planes.
Claim 14
Dependent Claim
29 words
A superconductor structure according to claim 8, wherein said single crystal body is a silicon single crystal body which has one of (100) planes, (110) planes, and (111) planes.
Claim 15
Dependent Claim
23 words
A superconductor structure according to claim 8, wherein said single crystal body is a spinel single crystal body which has a (111) plane.
Claim 16
Dependent Claim
22 words
A superconductor structure according to claim 8, wherein said single crystal body is a spinel crystal body which has a (110) plane.
Claim 17
Dependent Claim
23 words
A superconductor structure according to claim 8, wherein said single crystal body is a spinel single crystal body which has a (100) plane.
Claim 18
Dependent Claim
28 words
A superconductor structure according to claim 8, wherein said single crystal body is a strontium titanate single crystal body which has one of (100) planes and (110) planes.
References Cited (Backward Citations)
No citation records indexed.
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