US5212620A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for isolating SiO2 layers from PZT, PLZT, and platinum layers
Assignee: RADIANT TECHNOLOGIES A NM CORP
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Filing: 1992-03-03
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Granted: 1993-05-18
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Expires: 2012-03-03
Abstract
Abstract An improved method for constructing integrated circuit structures in which a buffer SiO 2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO 2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO 2 which is commonly observed when the SiO 2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO 2 layer from the ferroelectric material and/or the platinum regions.
Inventors
- 👤 Joseph T. Evans, Jr.
- 👤 Jeff A. Bullington
- 👤 Carl E. Montross, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 00:22
CPC Classifications
H; H01; H01H; H01H3/00; H01H3/02; H01H3/14; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
86 words
An improved integrated circuit structure comprising: a layer of SiO 2 ; an isolation since this obviously was intended which is substantially inert with respect to said layer of SiO 2 and which is substantially an electrical insulator; and an electrode layer of material chosen from the group PZT, PLZT, or platinum, wherein said isolation layer is disposed between, and in contact with, said layer of SiO 2 and said electrode layer, and wherein said isolation layer is substantially inert with respect to said electrode layer.
Claim 2
Dependent Claim
86 words
An improved integrated circuit structure comprising: a layer of SiO 2 ; an isolation since this obviously was intended which is substantially inert with respect to said layer of SiO 2 and which is substantially an electrical insulator; and an electrode layer of material chosen from the group PZT, PLZT, or platinum, wherein said isolation layer is disposed between, and in contact with, said layer of SiO 2 and said electrode layer, and wherein said isolation layer is substantially inert with respect to said electrode layer.
Claim 3
Dependent Claim
20 words
The structure of claim 1 wherein said isolation layer comprises TiO 2 , ZrO 2 , MgO, PZT, or PLZT.
Claim 4
Independent Claim
85 words
A method for isolating a first layer including SiO 2 from a second layer in an integrated circuit comprising the steps: depositing a bottom layer comprising either said first layer of said second layer; depositing a third layer of material which is substantially inert with respect to SiO 2 and said first and second layers and which is substantially an electrical insulator, said third layer being deposited on said bottom layer; and depositing the other of said first and second layers on said third layer.
Claim 5
Independent Claim
85 words
A method for isolating a first layer including SiO 2 from a second layer in an integrated circuit comprising the steps: depositing a bottom layer comprising either said first layer of said second layer; depositing a third layer of material which is substantially inert with respect to SiO 2 and said first and second layers and which is substantially an electrical insulator, said third layer being deposited on said bottom layer; and depositing the other of said first and second layers on said third layer.
Claim 6
Dependent Claim
29 words
The method of claim 3 wherein said step of depositing said third layer comprises the steps of: depositing a layer of titanium, magnesium, or zirconium; and oxidizing said layer.
Claim 7
Dependent Claim
23 words
The method of claim 4 further comprising the step of patterning said layer of titanium, magnesium, or zirconium prior to oxidizing said layer.
Claim 8
Dependent Claim
93 words
A ferroelectric capacitor structure comprising: a first layer comprising SiO 2 ; a first electrode comprising a second layer, said second layer comprising a conducting material; a third layer comprising a ferroelectric material, said third layer overlying said first electrode and extending laterally beyond said first electrode; a fourth layer of a substantially electrical insulating material which is substantially inert with respect to said ferroelectric material, said fourth layer being disposed adjacent to said first layer so as to prevent contact between said ferroelectric material and said first layer or said second layer.
Claim 9
Dependent Claim
93 words
A ferroelectric capacitor structure comprising: a first layer comprising SiO 2 ; a first electrode comprising a second layer, said second layer comprising a conducting material; a third layer comprising a ferroelectric material, said third layer overlying said first electrode and extending laterally beyond said first electrode; a fourth layer of a substantially electrical insulating material which is substantially inert with respect to said ferroelectric material, said fourth layer being disposed adjacent to said first layer so as to prevent contact between said ferroelectric material and said first layer or said second layer.
Claim 10
Dependent Claim
12 words
The capacitor structure of claim 6 wherein said conducting material comprises platinum.
Claim 11
Dependent Claim
14 words
The capacitor structure of claim 6 wherein said ferroelectric material comprises PZT or PLZT.
Claim 12
Dependent Claim
23 words
The capacitor structure of claim 6 wherein said substantially electrical insulating material is TiO 2 , ZrO 2 , MgO, PZT, or PLZT.
References Cited (Backward Citations)
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