US5453294A
Expired / Lapsed
US
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Method of controlling crystal orientation of PZT and PLZT thin films on platinum substrates
Assignee: Mitsubishi Materials Corp
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Filing: 1993-04-16
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Granted: 1995-09-26
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Expires: 2013-04-16
Abstract
Abstract In the production of ferroelectric PZT or PLZT thin film by the sol-gel method, application of precursor solution (sol) onto a substrate is followed by heat-treatment for pyrolysis at 150°-250° C., 250°-359° C., or 450°-550° C., and further firing for crystallization at 500°-800° C., whereby crystal orientation in the direction of the (111) plane, or the (111) and (100) planes, or the (100) and (200) planes can be effected.
Inventors
- 👤 Katsumi Ogi
- 👤 Nobuyuki Soyama
- 👤 Akihiko Mieda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:27
CPC Classifications
H; H10; H10N; H10N30/00; H10N30/01; H10N30/07; H10N30/074; H10N30/077; H10N30/078; H10N30/80; H10N30/85; H10N30/853; H10N30/8548; H10N30/8554
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
113 words
A method for forming a ferroelectric thin film having a preferential crystal orientation comprising the steps of: providing a platinum substrate; applying a film of an organic metal compound precursor solution for forming one of the group consisting of lead zirconate titanate and lanthanum-containing lead zirconate titanate onto the surface of the platinum substrate; pyrolyzing said applied film at a temperature of at least 150° C. and at most 250° C. for at least about 15 minutes; and subsequent heating of said platinum substrate and applied film in the range of 550°-800° C. to crystallize the film, whereby the film is composed of crystals preferentially oriented in a direction of a (111) plane.
Claim 2
Independent Claim
113 words
A method for forming a ferroelectric thin film having a preferential crystal orientation comprising the steps of: providing a platinum substrate; applying a film of an organic metal compound precursor solution for forming one of the group consisting of lead zirconate titanate and lanthanum-containing lead zirconate titanate onto the surface of the platinum substrate; pyrolyzing said applied film at a temperature of at least 150° C. and at most 250° C. for at least about 15 minutes; and subsequent heating of said platinum substrate and applied film in the range of 550°-800° C. to crystallize the film, whereby the film is composed of crystals preferentially oriented in a direction of a (111) plane.
Claim 3
Independent Claim
120 words
A method for forming a ferroelectric thin film having a preferential crystal orientation comprising the steps of: providing a platinum substrate; applying a film of an organic metal compound precursor solution for forming one of the group consisting of lead zirconate titanate and lanthanum-containing lead zirconate titanate onto the surface of the platinum substrate; pyrolyzing said applied film at a temperature of greater than 250° C. and up to a temperature of 350° C. for at least about 15 minutes; and subsequent heating of said platinum substrate and applied film in the range of 550°-800° C. to crystallize the film, whereby the film is composed of crystals preferentially oriented in a direction of a (111) plane and a (100) plane.
Claim 4
Independent Claim
120 words
A method for forming a ferroelectric thin film having a preferential crystal orientation comprising the steps of: providing a platinum substrate; applying a film of an organic metal compound precursor solution for forming one of the group consisting of lead zirconate titanate and lanthanum-containing lead zirconate titanate onto the surface of the platinum substrate; pyrolyzing said applied film at a temperature of greater than 250° C. and up to a temperature of 350° C. for at least about 15 minutes; and subsequent heating of said platinum substrate and applied film in the range of 550°-800° C. to crystallize the film, whereby the film is composed of crystals preferentially oriented in a direction of a (111) plane and a (100) plane.
Claim 5
Independent Claim
117 words
A method for forming a ferroelectric thin film having a preferential crystal orientation comprising the steps of: providing a platinum substrate; applying a film of an organic metal compound precursor solution for forming one of the group consisting of lead zirconate titanate and lanthanum-containing lead zirconate titanate onto the surface of the platinum substrate; pyrolyzing said applied film at a temperature of at least 450° C. and at most 550° C. for at least about 15 minutes; and subsequent heating of said platinum substrate and applied film in the range of 550°-800° C. to crystallize the film, whereby the film is composed of crystals preferentially oriented in a direction of a (100) plane and a (200) plane.
Claim 6
Independent Claim
117 words
A method for forming a ferroelectric thin film having a preferential crystal orientation comprising the steps of: providing a platinum substrate; applying a film of an organic metal compound precursor solution for forming one of the group consisting of lead zirconate titanate and lanthanum-containing lead zirconate titanate onto the surface of the platinum substrate; pyrolyzing said applied film at a temperature of at least 450° C. and at most 550° C. for at least about 15 minutes; and subsequent heating of said platinum substrate and applied film in the range of 550°-800° C. to crystallize the film, whereby the film is composed of crystals preferentially oriented in a direction of a (100) plane and a (200) plane.
References Cited (Backward Citations)
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