Patent US6025220A successfully refreshed from Google Patents.
US6025220A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a polysilicon diode and devices incorporating such diode
Assignee: Round Rock Research LLC
•
Filing: 1996-06-18
•
Granted: 2000-02-15
•
Expires: 2016-06-18
Abstract
Abstract A method for manufacturing a diode having a relatively improved on-off ratio. The diode is formed in a container in an insulative structure layered on a substrate of an integrated circuit. The container is then partially filled with a polysilicon material, by methods such as conformal deposition, leaving a generally vertical seam in the middle of the polysilicon material. An insulative material is deposited in the seam. The polysilicon material is appropriately doped and electrical contacts and conductors are added as required. The diode can be coupled to a chalcogenide resistive element to create a chalcogenide memory cell.
Inventors
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:49
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/01; H10D8/045; H10B; H10B63/00; H10B63/20; H10N; H10N70/00; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/882; H10N70/8828
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
64 words
A method forming a diode on a semiconductor substrate assembly, comprising the steps of: providing a container in an insulative layer in said substrate assembly; forming a volume of polysilicon material within said container, said polysilicon material formed to leave a void within said polysilicon material; and forming a p-n junction within said volume of polysilicon material filling an insulating material within said void.
Claim 2
Independent Claim
64 words
A method forming a diode on a semiconductor substrate assembly, comprising the steps of: providing a container in an insulative layer in said substrate assembly; forming a volume of polysilicon material within said container, said polysilicon material formed to leave a void within said polysilicon material; and forming a p-n junction within said volume of polysilicon material filling an insulating material within said void.
Claim 3
Dependent Claim
18 words
The method of claim 1, further comprising the step of placing a contact element above said polysilicon material.
Claim 4
Dependent Claim
12 words
The method of claim 1, wherein said insulating material comprises silicon nitride.
Claim 5
Dependent Claim
12 words
The method of claim 1, wherein said insulating material comprises silicon oxide.
Claim 6
Independent Claim
80 words
A method of forming a diode on a semiconductor substrate, comprising the steps of: depositing a volume of a insulating material on said substrate and forming a container therein; depositing a conformal layer of polysilicon material over said insulating material and said container formed therein, said volume of polysilicon material deposited to leave a generally central void therein; depositing a insulating material within said void; and doping said polysilicon to define a p-n junction within said volume of polysilicon material.
Claim 7
Independent Claim
80 words
A method of forming a diode on a semiconductor substrate, comprising the steps of: depositing a volume of a insulating material on said substrate and forming a container therein; depositing a conformal layer of polysilicon material over said insulating material and said container formed therein, said volume of polysilicon material deposited to leave a generally central void therein; depositing a insulating material within said void; and doping said polysilicon to define a p-n junction within said volume of polysilicon material.
Claim 8
Dependent Claim
45 words
The method of claim 5, wherein said volume of insulating material defining said container has an upper surface, and wherein said method further comprises the step of removing the portion of said conformal layer of polysilicon deposited above said upper surface of said insulating layer.
Claim 9
Dependent Claim
24 words
The method of claim 6, wherein said polysilicon material is removed by etching to a depth beneath said upper surface of said insulating layer.
Claim 10
Dependent Claim
28 words
The method of claim 5, wherein said p-n junction is formed within said volume of polysilicon material by doping a portion of said polysilicon material through ion implantation.
Claim 11
Independent Claim
74 words
A method for forming a polysilicon diode on a semiconductor substrate, comprising the steps of: providing an electrode on a substrate; providing an insulating layer including a container defined therein, said container providing electrical access to said electrode; forming a conformal layer of polysilicon within said container, while defining a void within said container; doping said polysilicon material within said container to form p-n junction; and substantially filling said void with a insulative material.
Claim 12
Independent Claim
74 words
A method for forming a polysilicon diode on a semiconductor substrate, comprising the steps of: providing an electrode on a substrate; providing an insulating layer including a container defined therein, said container providing electrical access to said electrode; forming a conformal layer of polysilicon within said container, while defining a void within said container; doping said polysilicon material within said container to form p-n junction; and substantially filling said void with a insulative material.
Claim 13
Dependent Claim
22 words
The method of claim 9, wherein said step of doping said polysilicon material is performed at least in part through ion implantation.
Claim 14
Independent Claim
91 words
A method for manufacturing a memory device having a memory cell therein, comprising the steps of: providing a semiconductor substrate; depositing a volume of a insulating material on said substrate and forming a container therein; depositing a conformal volume of polysilicon material within said container, said volume of polysilicon material deposited to leave a generally central void therein; depositing a insulating material within said void; doping said polysilicon to define a p-n junction within said volume of polysilicon material; and depositing a chalcogenide material in electrical communication with said polysilicon material.
Claim 15
Independent Claim
91 words
A method for manufacturing a memory device having a memory cell therein, comprising the steps of: providing a semiconductor substrate; depositing a volume of a insulating material on said substrate and forming a container therein; depositing a conformal volume of polysilicon material within said container, said volume of polysilicon material deposited to leave a generally central void therein; depositing a insulating material within said void; doping said polysilicon to define a p-n junction within said volume of polysilicon material; and depositing a chalcogenide material in electrical communication with said polysilicon material.
Claim 16
Dependent Claim
21 words
The method of claim 11, wherein said chalcogenide material is deposited at least partially within said void in said polysilicon material.
Claim 17
Independent Claim
65 words
A method of forming a diode in an integrated circuit, the method comprising the acts of: (a) forming a container having sidewalls in an insulative material formed on a substrate; (b) forming a layer of semiconductive material on the sidewalls of the container to create a peripheral semiconductive member having a substantially central void; and (c) doping the peripheral semiconductive material to create a diode.
Claim 18
Independent Claim
65 words
A method of forming a diode in an integrated circuit, the method comprising the acts of: (a) forming a container having sidewalls in an insulative material formed on a substrate; (b) forming a layer of semiconductive material on the sidewalls of the container to create a peripheral semiconductive member having a substantially central void; and (c) doping the peripheral semiconductive material to create a diode.
Claim 19
Dependent Claim
30 words
The method, as set forth in claim 13, wherein act (a) comprises the acts of: disposing an insulative material on a substrate; and forming the container in the insulative material.
Claim 20
Dependent Claim
24 words
The method, as set forth in claim 13, wherein act (a) comprises the act of: forming a generally cylindrical container in said insulative material.
Claim 21
Dependent Claim
36 words
The method, as set forth in claim 13, wherein act (b) comprises the act of: conformally depositing the layer of semiconductive material within the container to cover the sidewalls and a bottom portion of the container.
Claim 22
Dependent Claim
31 words
The method, as set forth in claim 13, wherein act (c) comprises the act of: doping an impurity into the peripheral semiconductive member after it has been formed within the container.
Claim 23
Dependent Claim
25 words
The method, as set forth in claim 13, wherein act (c) comprises the act of: forming a peripheral p-n junction within the peripheral semiconductive member.
Claim 24
Dependent Claim
21 words
The method, as set forth in claim 13, further comprising the act of: substantially filling the void with a insulative material.
Claim 25
Dependent Claim
25 words
The method, as set forth in claim 13, further comprising the act of: forming a memory element in electrical contact with the peripheral semiconductive member.
Claim 26
Dependent Claim
53 words
The method, as set forth in claim 20, wherein the act of forming a memory element comprises the acts of: forming a first electrode in electrical contact with the peripheral semiconductive member; forming a layer of chalcogenide material over the first electrode; and forming a second electrode over the layer of chalcogenide material.
Claim 27
Dependent Claim
17 words
The method, as set forth in claim 13, wherein the acts are performed in the recited order.
References Cited (Backward Citations)
US3423646A
Cited
GB1319388A
Cited
US3796926A
Cited
US4099260A
Cited
US4115872A
Cited
US4194283A
Cited
US4227297A
Cited
US4203123A
Cited
US4174521A
Cited
US4502208A
Cited
US4272562A
Cited
US4458260A
Cited
US4569698A
Cited
EP0117045A2
Cited
JPS60109266A
Cited
US4715109A
Cited
US4876668A
Cited
US4892840A
Cited
US4757359A
Cited
US4823181A
Cited
US4876220A
Cited
US4881114A
Cited
US4809044A
Cited
US4804490A
Cited
US5144404A
Cited
US5296716A
Cited
US5166758A
Cited
US5335219A
Cited
US5341328A
Cited
US5250461A
Cited
US5177567A
Cited
US5166096A
Cited
US5359205A
Cited
US5583348A
Cited
US5236863A
Cited
US5308783A
Cited
US5316978A
Cited
US5700712A
Cited
US5814150A
Cited
US5510629A
Cited
US5751012A
Cited
US5831276A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-14 | 2003-08-16 | 2004-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-14 | 2007-08-16 | 2008-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-14 | 2011-08-16 | 2012-02-15 | $7700.00 | Window Closed / Lapsed |