Process for the manufacture of a high density cell array of gain memory cells

Claim 1

A process for making an array of gain memory cells comprising an access transistor, a storage transistor and a diode, which comprises a) defining active device regions in a semiconductor substrate by etching a plurality of shallow trenches in said substrate, filling said trenches with a dielectric material and planarizing the surface of said substrate; b) forming a transistor gate stack by forming a thermal silicon oxide layer to form a transistor gate insulator and depositing a polysilicon layer thereover to form a gate conductor, forming a silicide layer thereover to minimize sheet resistance and depositing a layer of dielectric material thereover; c) integrating a diode into the gate stack formed in step b) by forming an opening in said gate stack, depositing polysilicon of a conductivity type opposite to that of the polysilicon gate conductor in said opening, forming a silicide layer thereover, filling said opening with silicon oxide and planarizing said opening; d) structuring the gate to form a plurality of gate stacks by etching through the gate stack layers to the surface of said substrate and depositing a spacer layer onto the sidewalls of the resultant gate stacks; e) ion implanting source and drain regions between the gate stacks formed in step d), thereby completing a plurality of transistors; f) forming a V DD line to connect the transistors formed in step e) to the power supply by depositing a nitride layer, forming openings in said nitride layer to expose the drain regions in said substrate, ion implanting through said openings and forming a silicide layer over the drain regions; g) forming a buried strap to connect the integrated diodes formed in step c) to the source regions of the storage transistors formed in step b) by depositing a barrier nitride layer and a first oxide layer thereover, planarizing said layers, forming openings in said first oxide and said nitride layers, depositing a low resistivity material in said openings as the buried strap material, and filling said openings with a second oxide layer; h) restructuring the gate stacks formed in step b) by etching the oxide over a portion of the gate stacks, depositing a silicon oxide layer, passivating the resultant gain memory devices by depositing a layer of silicon oxide thereover and planarizing the resultant array of gain memory devices.