US5021849A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Compact SRAM cell with polycrystalline silicon diode load
Assignee: Motorola Solutions Inc
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Filing: 1989-10-30
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Granted: 1991-06-04
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Expires: 2009-10-30
Abstract
Abstract A compact SRAM cell and method for its fabrication are disclosed. The small size of the SRAM cell is achieved by fabricating a diode load immediately above the gate electrode of each of the cross coupled transistors of the cell. In accordance with one embodiment, the gate electrode and diode structure include, in sequence, an N-type doped polycrystalline silicon layer, an electrically conductive diffusion barrier layer, a P-type doped polycrystalline silicon layer and an N-type doped polycrystalline layer.
Inventors
- 👤 John R. Pfiester
- 👤 Richard W. Mauntel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:27
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/412; H; H10; H10B; H10B10/00; Y; Y10; Y10S; Y10S257/00; Y10S257/903
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
212 words
A static RAM cell having first and second cross coupled transistors and integral diode loads, the cell comprising: a semiconductor substrate of first conductivity type having said first and second transistors formed at a surface thereof, each of said first and second transistors having spaced apart source and drain regions of second conductivity type formed in said substrate and separated by a channel region, a gate insulator overlaying said channel region, and a silicon gate electrode of second conductivity type overlaying said gate insulator; an electrically conductive diffusion barrier overlaying and electrically contacting said silicon gate electrodes; a diode load structure electrically coupled to each of said first and second transistors, each of said diode load structures comprising a first silicon layer of first conductivity type overlaying and electrically contacting said conductive diffusion barrier and a second silicon layer of second conductivity type overlaying said first silicon layer and having a rectifying junction between said first and second silicon layers; an electrical interconnection coupling said electrically conductive diffusion barrier overlaying said gate electrode of said first transistor to said drain region of said second transistor; and a second electrical interconnection coupling said electrically conductive diffusion barrier overlaying said gate electrode of said second transistor to said drain region of said first transistor.
Claim 2
Dependent Claim
212 words
A static RAM cell having first and second cross coupled transistors and integral diode loads, the cell comprising: a semiconductor substrate of first conductivity type having said first and second transistors formed at a surface thereof, each of said first and second transistors having spaced apart source and drain regions of second conductivity type formed in said substrate and separated by a channel region, a gate insulator overlaying said channel region, and a silicon gate electrode of second conductivity type overlaying said gate insulator; an electrically conductive diffusion barrier overlaying and electrically contacting said silicon gate electrodes; a diode load structure electrically coupled to each of said first and second transistors, each of said diode load structures comprising a first silicon layer of first conductivity type overlaying and electrically contacting said conductive diffusion barrier and a second silicon layer of second conductivity type overlaying said first silicon layer and having a rectifying junction between said first and second silicon layers; an electrical interconnection coupling said electrically conductive diffusion barrier overlaying said gate electrode of said first transistor to said drain region of said second transistor; and a second electrical interconnection coupling said electrically conductive diffusion barrier overlaying said gate electrode of said second transistor to said drain region of said first transistor.
Claim 3
Dependent Claim
16 words
The static RAM cell of claim 1 wherein said electrically conductive diffusion barrier comprises titanium nitride.
Claim 4
Dependent Claim
35 words
The static RAM cell of claim 1 further comprising an electrical contact to said second silicon layer of each of said diode load structures coupling said diode load structures to a sources of electrical potential.
Claim 5
Dependent Claim
118 words
A static RAM cell comprising: a first transistor having source and drain regions and a gate electrode; a second transistor having source and drain regions and a gate electrode; a first polycrystalline silicon diode electrically in series with said second transistor and positioned overlaying and forming a first electrical node with said gate electrode of said first transistor; a second polycrystalline silicon diode electrically in series with said first transistor and positioned overlaying and forming a second electrical node with said gate electrode of said second transistor; means for coupling said first electrical node to said drain region of said second transistor; and means for coupling said second electrical node to said drain region of said first transistor.
Claim 6
Dependent Claim
118 words
A static RAM cell comprising: a first transistor having source and drain regions and a gate electrode; a second transistor having source and drain regions and a gate electrode; a first polycrystalline silicon diode electrically in series with said second transistor and positioned overlaying and forming a first electrical node with said gate electrode of said first transistor; a second polycrystalline silicon diode electrically in series with said first transistor and positioned overlaying and forming a second electrical node with said gate electrode of said second transistor; means for coupling said first electrical node to said drain region of said second transistor; and means for coupling said second electrical node to said drain region of said first transistor.
Claim 7
Dependent Claim
154 words
A static RAM cell having first and second cross coupled transistors and diode loads comprising: a first transistor having source and drain regions and a first silicon gate electrode said source region coupled to a first source of electrical potential; a second transistor having source and drain regions and a second silicon gate electrode said source region coupled to a first source of electrical potential; a first silicon electrode overlaying said first silicon gate electrode and forming a first diode therewith said first silicon electrode coupled to a second source of electrical potential; a second silicon electrode overlaying said second silicon gate electrode and forming a second diode therewith, said second silicon electrode coupled to a second source of electrical potential; means for cross coupling said first gate electrode and said drain region of said second transistor; and means for cros coupling said second gate electrode and said drain region of said first transistor.
Claim 8
Dependent Claim
154 words
A static RAM cell having first and second cross coupled transistors and diode loads comprising: a first transistor having source and drain regions and a first silicon gate electrode said source region coupled to a first source of electrical potential; a second transistor having source and drain regions and a second silicon gate electrode said source region coupled to a first source of electrical potential; a first silicon electrode overlaying said first silicon gate electrode and forming a first diode therewith said first silicon electrode coupled to a second source of electrical potential; a second silicon electrode overlaying said second silicon gate electrode and forming a second diode therewith, said second silicon electrode coupled to a second source of electrical potential; means for cross coupling said first gate electrode and said drain region of said second transistor; and means for cros coupling said second gate electrode and said drain region of said first transistor.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-06-03 | 1994-12-03 | 1995-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-03 | 1998-12-03 | 1999-06-04 | $3760.00 | Window Closed / Lapsed |
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