US4922455A
Expired / Lapsed
US
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Memory cell with active device for saturation capacitance discharge prior to writing
Assignee: International Business Machines Corp
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Filing: 1987-09-08
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Granted: 1990-05-01
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Expires: 2007-09-08
Abstract
Abstract A transistor memory cell is disclosed of the type wherein an unclamped conducting transistor in each of a plurality of memory cells connected to a given word line is driven into saturation when storing data. The cell is equipped with controlled active devices for discharging the saturation capacitance of the conducting transistors prior to writing new data into the cells. Each active device is characterized with a forward low-impedance current direction and reverse high impedance current direction therethrough for each saturation transistor. Each active device is connected to discharge an associated saturation transistor in its forward current direction. In one embodiment, each active device discharges to a word line when the line is brought to an appropriate control potential. In another embodiment, each active device discharges to a separate discharge line not connected to the work line when the former line is brought to an appropriate control potential. The active devices may be diodes. In yet a further embodiment, the active devices may comprise diodes with leaky reverse bias characteristics. These diodes, in their reverse bias current direction, may be used as the memory cell loads. Alternatively, a PNP transistor may be used as the memory cell load. Resistors may be included in the discharge line to prevent word line-bit line voltage clamping.
Inventors
- 👤 William B. Chin
- 👤 Rudolph D. Dussault
- 👤 Ronald W. Knepper
- 👤 Friedrich C. Wernicke
- 👤 Robert C. Wong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:27
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/411; G11C11/4113
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
203 words
A transistor memory cell array of the type wherein each of a plurality of memory cells includes data storage transistors connected to a given word line, each of the data storage transistors being driven into saturation thereby charging respective saturation capacitance when storage data, comprising: a first word line; a second word line; each memory cell comprising two unclamped transistors with their current emitting terminals coupled to said second word line and with the control terminal for each transistor coupled to the current-collecting terminal of the other transistor, with one of said transistors conducting in saturation to store data; a pair of diodes each having a cathode connected to said first word line and an anode connected to the current-collecting terminal of a respective one of said two transistors, each said diode discharging in its forward bias direction the transistor saturation capacitance associated with the current-collecting terminal of said respective transistor prior to writing new data; and means for applying potentials to said first word line to cause the conduction of current in the forward bias direction to said diode prior to writing new data into each cell, and to cause nonconduction in the forward bias direction of said diodes at other times.
Claim 2
Dependent Claim
203 words
A transistor memory cell array of the type wherein each of a plurality of memory cells includes data storage transistors connected to a given word line, each of the data storage transistors being driven into saturation thereby charging respective saturation capacitance when storage data, comprising: a first word line; a second word line; each memory cell comprising two unclamped transistors with their current emitting terminals coupled to said second word line and with the control terminal for each transistor coupled to the current-collecting terminal of the other transistor, with one of said transistors conducting in saturation to store data; a pair of diodes each having a cathode connected to said first word line and an anode connected to the current-collecting terminal of a respective one of said two transistors, each said diode discharging in its forward bias direction the transistor saturation capacitance associated with the current-collecting terminal of said respective transistor prior to writing new data; and means for applying potentials to said first word line to cause the conduction of current in the forward bias direction to said diode prior to writing new data into each cell, and to cause nonconduction in the forward bias direction of said diodes at other times.
Claim 3
Dependent Claim
51 words
A memory cell array as defined in claim 1, wherein each of said diodes is disposed in a respective first current path between said first word line and the current-collecting terminal of said respective transistor; and further comprising means for providing a resistance in each of said respective first current paths.
Claim 4
Dependent Claim
36 words
A memory cell array as defined in claim 2, further comprising a different resistive second current path between said current-collecting terminal for each of said respective transistors and said first word line to provide a load.
Claim 5
Dependent Claim
39 words
A memory cell array as defined in claim 1, further comprising a load resistor connected between said current-collecting terminal of each of said respective transistors and said first word line, and in a current path not including said diodes.
Claim 6
Dependent Claim
75 words
A memory cell array as defined in claim 1, wherein said diodes are P type Schottky barrier diodes; and further comprising a first bit line; a first N type Schottky barrier diode for connecting said first bit line to the current-collecting terminals of one of said transistors; a second bit line; and a second N type Schottky barrier diode for connecting said second bit line to the current-collecting terminal of the other of said transistors.
Claim 7
Dependent Claim
35 words
A memory cell array as defined in claim 5, wherein said P type diodes have a leaky reverse bias characteristic which provides an equivalent resistance of at least 90 k-ohms for reverse bias current flow.
Claim 8
Dependent Claim
35 words
A memory cell as defined in claim 6, wherein said diodes are Schottky barrier diodes with a leaky reverse bias characteristic which provides a resistance of at least 90 k-ohms for reverse bias current flow.
Claim 9
Dependent Claim
51 words
A memory cell as defined in claim 7, wherein each of said different diodes is disposed in a respective first current path between said first word line and the current-collecting terminal of said respective transistor; and further comprising means for providing a resistance in each of said respective first current paths.
Claim 10
Dependent Claim
93 words
A memory cell array as defined in claim 1 further comprising a first bit line, a first N type Schottky barrier diode for connecting said first bit line to the current-collecting terminals of one of said transistors; a second bit line; and a second N type Schottky barrier diode for connecting said second bit line to the current-collecting terminal of the other of said transistors; and further comprising a resistor disposed between the cathode of each of said first and second Schottky barrier diodes and the current-collecting terminal of the associated said transistor.
Claim 11
Dependent Claim
241 words
A transistor memory cell array of the type wherein each of a plurality of memory cells includes data storage transistors connected to a given word line, each of the data storage transistors being driven into saturation thereby charging respective saturation capacitance when storing data, comprising a first word line; a second word line; a discharge line separate from said word lines; each memory cell comprising two unclamped transistors with their current-emitting terminals coupled to said second word line and with the control terminal for each of said transistors coupled to the current-collecting terminal of the other transistor, with one of said transistors conducting in saturation to store data; a pair of diodes, each having a cathode connected to said discharge line and an anode connected to the current-collecting terminal of a respective one of said transistors, each said diode discharging in its forward bias direction said transistor saturation capacitance prior to writing new data; means for applying potentials to said discharge line to cause the conduction of current in the forward bias direction of said diodes prior to writing new data into each cell, and to cause non-conduction in the forward current direction of said diodes at other times; and means for applying potentials to said first and said second word lines to cause the writing of new data into each cell after said saturation capacitance discharging has occurred and said diodes are no longer conducting in their forward bias direction.
Claim 12
Dependent Claim
241 words
A transistor memory cell array of the type wherein each of a plurality of memory cells includes data storage transistors connected to a given word line, each of the data storage transistors being driven into saturation thereby charging respective saturation capacitance when storing data, comprising a first word line; a second word line; a discharge line separate from said word lines; each memory cell comprising two unclamped transistors with their current-emitting terminals coupled to said second word line and with the control terminal for each of said transistors coupled to the current-collecting terminal of the other transistor, with one of said transistors conducting in saturation to store data; a pair of diodes, each having a cathode connected to said discharge line and an anode connected to the current-collecting terminal of a respective one of said transistors, each said diode discharging in its forward bias direction said transistor saturation capacitance prior to writing new data; means for applying potentials to said discharge line to cause the conduction of current in the forward bias direction of said diodes prior to writing new data into each cell, and to cause non-conduction in the forward current direction of said diodes at other times; and means for applying potentials to said first and said second word lines to cause the writing of new data into each cell after said saturation capacitance discharging has occurred and said diodes are no longer conducting in their forward bias direction.
Claim 13
Dependent Claim
20 words
A memory cell array as defined in claim 10, wherein said current paths including said diodes further include a resistor.
Claim 14
Dependent Claim
75 words
A memory cell array as defined in claim 10, wherein said diodes are P type Schottky barrier diodes; and further comprising a first bit line; a first N type Schottky barrier diode for connecting said first bit line to the current-collecting terminals of one of said transistors; a second bit line; and a second N type Schottky barrier diode for connecting said second bit line to the current-collecting terminal of the other of said transistors.
Claim 15
Dependent Claim
36 words
A memory cell array as defined in claim 12 wherein said P type Schottky barrier diodes have a leaky reverse bias characteristics which provides a resistance of at least 90 k-ohms for reverse bias current flows.
Claim 16
Dependent Claim
19 words
A memory cell array as defined in claim 12 further comprising a resistor in each of said current paths.
Claim 17
Dependent Claim
19 words
A memory cell array as defined in claim 10 further comprising a resistor in each of said current paths.
Claim 18
Dependent Claim
27 words
A memory cell as defined in claim 10, including a separate load resistor connected between the current-collecting terminal of each said transistor and said first word line.
Claim 19
Dependent Claim
22 words
A memory cell array as defined in claim 10, wherein said first word line is connected directly to a power supply line.
Claim 20
Dependent Claim
93 words
A memory cell array as defined in claim 10 further comprising a first bit line; a first N type Schottky barrier diode for connecting said first bit line to the current-collecting terminals of one of said transistors; a second bit line; and a second N type Schottky barrier diode for connecting said second bit line to the current-collecting terminal of the other of said transistors; and further comprising a resistor disposed between the cathode of each of said first and second Schottky barrier diodes and the current-collecting terminal of said transistor associated therewith.
Claim 21
Dependent Claim
36 words
A memory cell array as defined in claim 10, wherein said P type Schottky barrier diodes have a leaky reverse bias characteristic which provides a resistance of at least 90 k-ohms for reverse bias current flows.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-30 | 1993-10-30 | 1994-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-30 | 1997-10-30 | 1998-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-30 | 2001-10-30 | 2002-05-01 | $7700.00 | Window Closed / Lapsed |