Bipolar transistor read only or read-write store with low impedance sense amplifier

Claim 2

A data store of the type having bit lines and word lines and a semiconductor device located at cross over points of a word line and a bit line, wherein the semiconductor device comprises a single emitter bipolar transistor and means connecting the emitter terminal of the transistor to the associated bit line, and a plurality of current sensing circuits connected to conduct between the bit lines and a common point, said current sensing circuits having a low impedance in the circuit between said emitter terminals, wherein the improvement comprises, a first transistor and a second transistor in the current sensing circuit for each bit line each having an emitter terminal connected to a common current source, the current source providing a sufficiently high base current during a read operation to maintain said low impedance in the collector-emitter circuit of the first transistor, whereby the first and second transistors tend to have corresponding collector currents, means connecting the collector terminal of said first transistor to a bit line, and means connecting the collector terminal of said second transistor to signify the data storage state of a cell during a read operation.

Claim 3

The data store defined in claim 1 having a read-write section and a read only section, and a semiconductor device located at cross over points of a word line and a bit line, pairs of some of said bipolar transistors being cross connected between their base and collector terminals to form a bistable read-write storage cell, the impedance of said current responsive circuits being sufficiently low to maintain substantially the voltage between a word line and said common point as a collector difference voltage for a cell in a data storage state, others of said semiconductor devices being arranged to function as diodes forming the read only section of the store.

Claim 4

A data store of the type having bit lines and word lines and a semiconductor device located at cross over points of a word line and a bit line, wherein the semiconductor device comprises a single emitter bipolar transistor and means connecting the emitter terminal of the tranistor to the associated bit line, and a plurality of current sensing circuits connected to conduct between the bit lines and a common point, said current sensing circuits having a low impedance in the circuit between said emitter terminals, pairs of some of said bipolar transistors being cross connected between their base and collector terminals to form a bistable storage cell, the impedance of said current responsive circuits being sufficiently low to maintain substantially the voltage between a word line and said common point as a collector difference voltage for a cell in a data storage state, others of said some connector devices being arranged to function as diodes forming a read only section of the store, the current sensing circuit comprising a first transistor and a second transistor each having an emitter terminal connected to said common point and having a base terminal connected to a common current source, whereby the first and second transistors tend to have corresponding collector currents, means connecting the collector terminal of said first transistor to a bit line, and means connecting the collector terminal of said second transistor to signify the data storage state of a cell during a read operation, pairs of said bipolar transistors being cross connected between their base and collector terminals to form a bistable storage cell and wherein the impedance of said current responsive circuits is sufficiently low to maintain substantially the voltage between a word line and said common point as a collector difference voltage for a cell in a data storage state, said current source providing a sufficiently high base current during a read operation to maintain said low impedance in the collector-emitter circuit of the first transistor, and means connecting the current source at said common point, the impedance of said current sensing circuits having a low value such that current division between the two bit lines of a bistable storage cell is established substantially by the binary storage stage of the cell and independent of the impedance of the current sensing circuits.

Claim 5

A data store of the type having bit lines and word lines and a semiconductor device located at cross over points of a word line and a bit line, wherein the semiconductor device comprises a single emitter bipolar transistor and means connecting the emitter terminal of the tranistor to the associated bit line, and a plurality of current sensing circuits connected to conduct between the bit lines and a common point, said current sensing circuits having a low impedance in the circuit between said emitter terminals, pairs of some of said bipolar transistors being cross connected between their base and collector terminals to form a bistable storage cell, the impedance of said current responsive circuits being sufficiently low to maintain substantially the voltage between a word line and said common point as a collector difference voltage for a cell in a data storage state, others of said some connector devices being arranged to function as diodes forming a read only section of the store, the current sensing circuit comprising a first transistor and a second transistor each having an emitter terminal connected to said common point and having a base terminal connected to a common current source, whereby the first and second transistors tend to have corresponding collector currents, means connecting the collector terminal of said first transistor to a bit line, and means connecting the collector terminal of said second transistor to signify the data storage state of a cell during a read operation, pairs of said bipolar transistors being cross connected between their base and collector terminals to form a bistable storage cell and wherein the impedance of said current responsive circuits is sufficiently low to maintain substantially the voltage between a word line and said common point as a collector difference voltage for a cell in a data storage state, said current source providing a sufficiently high base current during a read operation to maintain said low impedance in the collector-emitter circuit of the first transistor, and means connecting the current source at said common point, the impedance of said current sensing circuits having a low value such that current division between the two bit lines of a bistable storage cell is established substantially by the binary storage stage of the cell and independent of the impedance of the current sensing circuits.