Semiconductor device

Abstract

Abstract PURPOSE:To obtain a stably manufactured semiconductor device by using Schottky diode as load elements of inverters which form a memory cell. CONSTITUTION:Schottky diodes constituting of the loads of the inverters have cathodes connected to a power source 10 and anodes connected to driving FETs 1 and 2 to utilize the reverse characteristic of the Schottky diode. The reverse currents of the Schottky diodes are much less than a current large enough to drive an FET in an on state and greater than the leak current of an FET in an off state, so the diodes are used suitably as the load elements of the inverters which constitute the flip-flop of the memory cell. In this example, access transistors 5 and 6 are represented merely as diodes, but Schottky diodes are usable.

Inventors

• 👤 Kenji Anami
• 👤 穴見　健治

Bibliographic Details