Semiconductor memory device with barrier layer

Claim 1

A static memory cell of a semiconductor device comprising: a first layer of polycrystal silicon containing semiconductor impurities of a selected conductivity type and having a resistance; a second layer of a predetermined length of polycrystal silicon overlapping said first layer and having a resistance higher than that of said first layer, said second layer having a first portion and a second portion, said second portion of said second layer forming a load resistor of the static memory cell; an insulation film provided between said first layer and said second layer and having a contact hole formed therein and an upper surface; and a barrier layer for preventing the semiconductor impurities contained in the silicon of said first layer from entering said second layer, the barrier layer comprising a silicide layer of a refractory metal contacting said first portion of said second layer of polycrystal silicon, the barrier layer extending in a current path of said first portion of said second layer of polycrystal silicon, through which an electric current flows, to reduce the resistance in said current path of said first portion of said second layer of polycrystal silicon, said barrier layer having a first portion formed in said contact hole and a second portion extending on the upper surface of a portion of said insulation film and between said insulation film and said second polycrystal silicon layer, the area of said second portion of said barrier layer establishing the resistance of said load resistor by determining the size of the area of said second portion of said second layer of polycrystal silicon wherein said semiconductor impurities contained in said silicon of said first layer may enter said second layer, the first portion of said barrier layer formed in said contact hole being sandwiched by said first and second silicon layers and connecting the first and second silicon layers.