US4533935A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and a method for manufacturing the same
Assignee: Toshiba Corp
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Filing: 1981-08-04
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Granted: 1985-08-06
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Expires: 2001-08-04
Abstract
Abstract A semiconductor device provided with a circuit resistor. The device comprises a first conductive layer overlying a semiconductor substrate, an insulation layer deposited on the first conductive layer, a second conductive layer formed on the insulation layer, and a resistor for connecting together the first and second conductive layers. The portion of the resistor which exerts resistance is provided in an opening selectively drilled in the insulation layer with a sufficient depth to contact the first conductive layer.
Inventors
- 👤 Toru Mochizuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:31
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/474; H10D88/00; H10P; H10P95/00; H10B; H10B10/00; H10B10/15
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
78 words
A semiconductor device which comprises: a first conductive layer formed of refractory metal silicide overlying a semiconductor substrate; an insulation layer formed on the first conductive layer; a second conductive layer formed on the insulation layer; and a resistor formed of an oxide or nitride of the refractory metal silicide which connects together the first and second conductive layers, that portion of said resistor which exerts resistance being formed in an opening selectively formed in the insulation layer.
Claim 2
Dependent Claim
78 words
A semiconductor device which comprises: a first conductive layer formed of refractory metal silicide overlying a semiconductor substrate; an insulation layer formed on the first conductive layer; a second conductive layer formed on the insulation layer; and a resistor formed of an oxide or nitride of the refractory metal silicide which connects together the first and second conductive layers, that portion of said resistor which exerts resistance being formed in an opening selectively formed in the insulation layer.
Claim 3
Dependent Claim
43 words
The semiconductor device according to claim 1, wherein said refractory metal silicide is formed with at least one refractory metal selected from the group consisting of titanium (Ti), platinum (Pt), tungsten (W), molybdenum (Mo), tantalum (Ta), palladium (Pd), hafnium (Hf), and zirconium (Zr).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-08-05 | 1989-02-04 | 1989-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-08-05 | 1993-02-04 | 1993-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-08-05 | 1997-02-04 | 1997-08-06 | $7700.00 | Window Closed / Lapsed |