US4282647A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating high density refractory metal gate MOS integrated circuits utilizing the gate as a selective diffusion and oxidation mask
Assignee: Standard Microsystems LLC
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Filing: 1979-09-26
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Granted: 1981-08-11
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Expires: 1999-09-26
Abstract
Abstract A method for fabricating an MOS integrated circuit having a refractory metal gate structure includes the formation of an insulating layer and a conductive refractory metal layer on a substrate, followed by the selective removal of portions of these layers to define the locations of source, drain, and other diffused regions. After the diffusion or implantation of the drain and source regions, using the refractory metal as a mask, the refractory metal, other than at the gate regions, is removed, and the portion of the underlying insulating layer that is thereby exposed is then etched away. An oxidizing step is performed to form a thick oxide region at those areas of the substrate not covered by the remaining portions of the refractory metal layer. Also disclosed is an MOS refractory metal gate MOS device fabricated by the method.
Inventors
- 👤 Paul Richman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 14:02
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10D64/66; H10D64/665; H10D64/667; H10D64/668; H10P; H10P14/00; H10P14/60; H10P14/61; H10P76/00; H10P76/40; H10P76/405; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/0126; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
176 words
A process for fabricating as MOS device comprising the steps of (a) providing a substrate of a first conductivity type, (b) forming on said substrate an insulating layer and an overlying refractory metal layer, (c) selectively removing portions of said refractory metal and the underlying portion of said insulating layer to define openings at the locations of source and drain regions, (d) introducing impurities of an opposite conductivity type through said openings into the exposed upper surface of said substrate to form source and drain regions, (e) removing the portions of said refractory metal remaining over the field regions while allowing the refractory metal to remain over predetermined gate regions; (f) removing the exposed insulating regions and then oxidizing the surface of said substrate to form an oxide region at locations other than those protected by the remaining portion of refractory metal, (g) forming a thick oxide layer by thermal oxidation in areas not protected by said refractory metal, and (h) selectively forming a metalization pattern over said thick oxide regions and over said refractory metal.
Claim 2
Dependent Claim
176 words
A process for fabricating as MOS device comprising the steps of (a) providing a substrate of a first conductivity type, (b) forming on said substrate an insulating layer and an overlying refractory metal layer, (c) selectively removing portions of said refractory metal and the underlying portion of said insulating layer to define openings at the locations of source and drain regions, (d) introducing impurities of an opposite conductivity type through said openings into the exposed upper surface of said substrate to form source and drain regions, (e) removing the portions of said refractory metal remaining over the field regions while allowing the refractory metal to remain over predetermined gate regions; (f) removing the exposed insulating regions and then oxidizing the surface of said substrate to form an oxide region at locations other than those protected by the remaining portion of refractory metal, (g) forming a thick oxide layer by thermal oxidation in areas not protected by said refractory metal, and (h) selectively forming a metalization pattern over said thick oxide regions and over said refractory metal.
Claim 3
Dependent Claim
38 words
The process of claim 1, further comprising the step of (f 1 ) introducing impurities of the same conductivity type as in the substrate through said oxide region into the surface of said substrate following said step (f).
Claim 4
Dependent Claim
25 words
The process of claim 1, further comprising the step of (g 1 ) selectively forming contact holes through said oxide region following said step (g).
Claim 5
Dependent Claim
75 words
The process of claim 1, wherein the portion of said refractory metal layer remaining after said step (c) acts as a barrier to the introduction of impurities into the portion of said substrate underlying said portion of refractory metal in said step (d), and the portion of said refractory metal layer remaining after said step (e) acts as a barrier to the thermal oxidation of the underlying portion of said substrate in said step (g).
Claim 6
Dependent Claim
30 words
The process of claim 4, in which the portion of said refractory metal layer remaining after the completion of said step (e) forms the gate electrode of an MOS transistor.
Claim 7
Dependent Claim
22 words
The method of claim 1, in which said refractory metal is selected from the group consisting of molybdenum silicide, platinum, and rhodium.
Claim 8
Dependent Claim
27 words
The process of claim 1, in which the portion of said refractory metal layer remaining after said oxidation step forms the gate electrode of an MOS transistor.
Claim 9
Dependent Claim
23 words
The process of claim 1, further comprising the step of introducing impurities of said first conductivity type into the surface of said substrate.
Claim 10
Dependent Claim
152 words
A process for fabricating an MOS device comprising the steps of providing a substrate of a first conductivity type, forming a refractory metal layer and an underlying insulating layer on said substrate, selectively removing portions of said refractory metal layer and said underlying insulating layer to define openings at the locations of source and drain regions, introducing impurities of an opposite conductivity type through said openings into the exposed upper surface of said substrate to form source and drain regions using the remaining portion of said refractory metal layer as a barrier to the impurities, removing an additional portion of said refractory metal while allowing refractory metal to remain over predetermined gate regions, oxidizing the surface of said substrate to form an oxide region at locations other than those protected by said refractory metal layer using the remaining refractory metal as an oxidation barrier, and thereafter selectively forming an overlying metalization pattern.
Claim 11
Dependent Claim
152 words
A process for fabricating an MOS device comprising the steps of providing a substrate of a first conductivity type, forming a refractory metal layer and an underlying insulating layer on said substrate, selectively removing portions of said refractory metal layer and said underlying insulating layer to define openings at the locations of source and drain regions, introducing impurities of an opposite conductivity type through said openings into the exposed upper surface of said substrate to form source and drain regions using the remaining portion of said refractory metal layer as a barrier to the impurities, removing an additional portion of said refractory metal while allowing refractory metal to remain over predetermined gate regions, oxidizing the surface of said substrate to form an oxide region at locations other than those protected by said refractory metal layer using the remaining refractory metal as an oxidation barrier, and thereafter selectively forming an overlying metalization pattern.
Claim 12
Dependent Claim
27 words
The process of claim 9, in which the portion of said refractory metal layer remaining after said oxidizing step forms the gate electrode of an MOS transistor.
Claim 13
Dependent Claim
23 words
The process of claim, 9, further comprising the step of introducing impurities of said first conductivity type into the surface of said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-10 | 1985-02-09 | 1985-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-10 | 1989-02-09 | 1989-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-10 | 1993-02-09 | 1993-08-11 | $7700.00 | Window Closed / Lapsed |