Interconnection structure for polycrystalline silicon resistor and methods of making same

Claim 1

In combination, a pair of conductive members of silicon semiconductor material of N-type conductivity and of low resistivity, a layer of insulating material overlying said conductive members of silicon, a pair of openings in said layer of insulating material exposing respective portions of said conductive members of silicon, a pair of conductive barrier layers, each barrier layer constituted of a silicide of a metal selected from the group consisting of platinum, palladium and nickel, each barrier layer situated in a respective one of said openings and each making contact with a respective exposed portion of said conductive members, a body of polycrystalline silicon of said N-type conductivity and of high resistivity overlying said insulating layer and having a pair of end portions, each end portion contacting a respective one of said barrier layers, each conductive barrier layer providing a barrier to the diffusion of N-type conductivity determining dopants from said conductive members of silicon into said body of polycrystalline silicon.