Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a back surface electrode having a low contact resistance without deteriorating the insulating property of a substrate surface and characteristics of an element by employing a nickel silicide as a contact layer with a silicon substrate. CONSTITUTION:After coating a nickel layer 7 on the back surface of a silicon substrate 1, it is heated in inert gas, and a nickel silicide layer 8 is formed. Then, a titanium layer 9, a nickel layer 10, a silver layer 11 are sequentially coated on the layer 8 to form a multilayer architecture back surface electrode 12. A base layer, an emitter layer and the like are formed on the main surface of the silicon substrate 1.

Inventors

• 👤 Koichi Inoue

Bibliographic Details