Novel integratable schottky barrier structure and method for the fabrication thereof

Claim 1

A METHOD OF FORMING SCHOTTKY-BARRIER CONTACTS TO A SILICON SURFACE COMPRISING DEPOSITING A LAYER CONSISTING ESSENTIALLY OF PLATINUM ON SAID SURFACE, HEATING TO FORM A PLATINUM SILICIDE LAYER ON A SILICON SUBSTRATE HAVING A MAXIMUM CONDUCTIVITY-DETERMINING IMPURITY C0 OF 10**18 ATOMS/CM3, DEPOSITING A METALLIC LAYER CONSISTING ESSENTIALLY OF ALUMINUM ON SAID PLATINUM SILICIDE LAYER, AND SINTERING THE SUBSTRATE AT A TEMPERATURE IN THE ORDER OF FROM 400* TO 550*C. FOR AT LEAST 1 HOUR

Claim 2

A METHOD OF FORMING SCHOTTKY-BARRIER CONTACTS TO A SILICON SURFACE COMPRISING DEPOSITING A LAYER CONSISTING ESSENTIALLY OF PLATINUM ON SAID SURFACE, HEATING TO FORM A PLATINUM SILICIDE LAYER ON A SILICON SUBSTRATE HAVING A MAXIMUM CONDUCTIVITY-DETERMINING IMPURITY C0 OF 10**18 ATOMS/CM3, DEPOSITING A METALLIC LAYER CONSISTING ESSENTIALLY OF ALUMINUM ON SAID PLATINUM SILICIDE LAYER, AND SINTERING THE SUBSTRATE AT A TEMPERATURE IN THE ORDER OF FROM 400* TO 550*C. FOR AT LEAST 1 HOUR

Claim 5

A method for simultaneously forming Schottky-Barrier and ohmic contacts in a silicon substrate comprising forming in one planar surface of said silicon substrate a first plurality of regions having maximum conductivity-determining impurity C0''s of 1018 atoms/cm3 and a second plurality of regions having conductivity-determining C0''s greater than 1018 atoms/cm3, forming an electrically insulative layer on said substrate, forming contacts through said insulative layer to said first and second pluralities of regions, depositing platinum layers in said contact holes, heating to form platinum silicide in said contact holes, depositing metallic layers consisting essentially of aluminum on said platinum silicide layers, and sintering the substrate at a temperature in the order of from 400* to 550*C. for at least 1 hour to form Schottky-Barrier contacts in the holes to said first plurality of regions and ohmic contacts in the holes to said second plurality of regions.

Claim 6

A method for simultaneously forming Schottky-Barrier and ohmic contacts in a silicon substrate comprising forming in one planar surface of said silicon substrate a first plurality of regions having maximum conductivity-determining impurity C0''s of 1018 atoms/cm3 and a second plurality of regions having conductivity-determining C0''s greater than 1018 atoms/cm3, forming an electrically insulative layer on said substrate, forming contacts through said insulative layer to said first and second pluralities of regions, depositing platinum layers in said contact holes, heating to form platinum silicide in said contact holes, depositing metallic layers consisting essentially of aluminum on said platinum silicide layers, and sintering the substrate at a temperature in the order of from 400* to 550*C. for at least 1 hour to form Schottky-Barrier contacts in the holes to said first plurality of regions and ohmic contacts in the holes to said second plurality of regions.

Claim 9

A method of forming Schottky-Barrier contacts to a silicon surface comprising depositing a layer consisting essentially of platinum on said surface, heating to form a platinum silicide layer on a siLicon substrate having a maximum conductivity-determining impurity C0 of 1018 atoms/cm3, depositing a metallic layer consisting essentially of aluminum and copper on said platinum silicide layer, and sintering the substrate at a temperature in the order of from 400* to 550*C. for at least 1 hour.

Claim 10

A method of forming Schottky-Barrier contacts to a silicon surface comprising depositing a layer consisting essentially of platinum on said surface, heating to form a platinum silicide layer on a siLicon substrate having a maximum conductivity-determining impurity C0 of 1018 atoms/cm3, depositing a metallic layer consisting essentially of aluminum and copper on said platinum silicide layer, and sintering the substrate at a temperature in the order of from 400* to 550*C. for at least 1 hour.

Claim 11

A method of forming Schottky-Barrier contacts to a silicon surface comprising depositing a layer consisting essentially of platinum on said surface, heating to form a platinum silicide layer on a silicon substrate having a maximum conductivity-determining impurity C0 of 1018 atoms/cm3, depositing a metallic layer consisting essentially of aluminum on said platinum silicide layer, depositing a layer of silicon on said metallic layer, and sintering the substrate at a temperature in the order of from 400* to 550*C. for at least 1 hour.

Claim 12

A method of forming Schottky-Barrier contacts to a silicon surface comprising depositing a layer consisting essentially of platinum on said surface, heating to form a platinum silicide layer on a silicon substrate having a maximum conductivity-determining impurity C0 of 1018 atoms/cm3, depositing a metallic layer consisting essentially of aluminum on said platinum silicide layer, depositing a layer of silicon on said metallic layer, and sintering the substrate at a temperature in the order of from 400* to 550*C. for at least 1 hour.

Claim 13

A method for simultaneously forming Schottky-Barrier and ohmic contacts in a silicon substrate comprising forming in one planar surface of said silicon substrate a first plurality of regions having maximum conductivity-determining impurity C0''s of 1018 atoms/cm3 and a second plurality of regions having conductivity-determining C0''s greater than 1018 atoms/cm3, forming an electrically insulative layer on said substrate, forming contacts through said insulative layer to said first and second pluralities of regions, depositing platinum layers in said contact holes, heating to form platinum silicide in said contact holes, depositing metallic layers consisting essentially of aluminum and copper on said platinum silicide layers, and sintering the substrate at a temperature in the order of from 400* to 550*C. for at least one hour to form Schottky-Barrier contacts in the holes to said first plurality of regions and ohmic contacts in the holes to said second plurality of regions.

Claim 14

A method for simultaneously forming Schottky-Barrier and ohmic contacts in a silicon substrate comprising forming in one planar surface of said silicon substrate a first plurality of regions having maximum conductivity-determining impurity C0''s of 1018 atoms/cm3 and a second plurality of regions having conductivity-determining C0''s greater than 1018 atoms/cm3, forming an electrically insulative layer on said substrate, forming contacts through said insulative layer to said first and second pluralities of regions, depositing platinum layers in said contact holes, heating to form platinum silicide in said contact holes, depositing metallic layers consisting essentially of aluminum and copper on said platinum silicide layers, and sintering the substrate at a temperature in the order of from 400* to 550*C. for at least one hour to form Schottky-Barrier contacts in the holes to said first plurality of regions and ohmic contacts in the holes to said second plurality of regions.

Claim 15

A method for simultaneously forming Schottky-Barrier and ohmic contacts in a silicon substrate comprising forming in one planar surface of said silicon substrate a first plurality of regions having maximum conductivity-determining impurity C0''s of 1018 atoms/cm3 and a second plurality of regions having conductivity-determining C0''s greater than 1018 atoms/cm3, forming an electrically insulative layer on said substrate, forming contacts through said insulative layer to said first and second pluralities of regions, depositing platinum layers in said contact holes, heating to form platinum silicide in said contact holes, depositing metallic layers consisting essentially of aluminum on said platinum silicide layers, depositing a layer of silicon on said metallic layer, and sintering the substrate at a temperature in the order of from 400* to 550*C. for at least 1 hour to form Schottky-Barrier contacts in the holes to said first plurality of regions and ohmic contacts in the holes to said second plurality of regions.

Claim 16

A method for simultaneously forming Schottky-Barrier and ohmic contacts in a silicon substrate comprising forming in one planar surface of said silicon substrate a first plurality of regions having maximum conductivity-determining impurity C0''s of 1018 atoms/cm3 and a second plurality of regions having conductivity-determining C0''s greater than 1018 atoms/cm3, forming an electrically insulative layer on said substrate, forming contacts through said insulative layer to said first and second pluralities of regions, depositing platinum layers in said contact holes, heating to form platinum silicide in said contact holes, depositing metallic layers consisting essentially of aluminum on said platinum silicide layers, depositing a layer of silicon on said metallic layer, and sintering the substrate at a temperature in the order of from 400* to 550*C. for at least 1 hour to form Schottky-Barrier contacts in the holes to said first plurality of regions and ohmic contacts in the holes to said second plurality of regions.