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US3753774A
Expired / Lapsed
US
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Method for making an intermetallic contact to a semiconductor device
Assignee: RCA Corp
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Filing: 1971-04-05
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Granted: 1973-08-21
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Expires: 1991-04-05
Abstract
Abstract The method includes the step of depositing a semiconductor layer on a surface of a semiconductor body. A metal layer, selected from the metals which will form an intermetallic compound with the semiconductor layer, is deposited on the semiconductor layer and treated to form an intermetallic compound. The treatment step and the thickness of the metal and semiconductor layers is controlled in order to control the depth to which the intermetallic contact extends into the body.
Inventors
- 👤 Veloric H Seymour
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 21:36
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/106; Y10S148/122; Y10S148/139; Y10S148/147; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49204
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
12 words
A method according to claim 1, wherein said semiconductor layer is monocrystalline.
Claim 2
Dependent Claim
20 words
A method according to claim 2, wherein said semiconductor layer is of the same conductivity type as said semiconductor body.
Claim 3
Dependent Claim
18 words
A method according to claim 1, wherein said semiconductor body and semiconductor layer comprise a like semiconductor material.
Claim 4
Dependent Claim
12 words
A method according to claim 4, wherein said semiconductor material comprises silicon.
Claim 5
Dependent Claim
23 words
A method according to claim 5, wherein said meTal layer is selected from a group consisting of gold, silver, platinum, palladium, and rhodium.
Claim 6
Independent Claim
98 words
A method for making an intermetallic ohmic contact to a semiconductor body, comprising the steps of: a. providing a silicon body having a surface with an insulating coating thereon, said coating having an opening extending to said surface; b. depositing a monocrystalline silicon layer in said opening and on said surface; c. depositing a platinum layer on said silicon layer; and d. heating said layers in an inert atmosphere to a temperature in excess of 750*C. to form a platinum silicide contact which extends through said silicon layer to a shallow depth below said surface into said body.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-20 | 1977-02-19 | 1977-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-20 | 1981-02-19 | 1981-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-20 | 1985-02-19 | 1985-08-21 | $7700.00 | Window Closed / Lapsed |