US3558366A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal shielding for ion implanted semiconductor device
Assignee: AT&T Inc
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Filing: 1968-09-17
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Granted: 1971-01-26
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Expires: 1988-09-17
Abstract
Abstract DESCRIBED HEREIN IS A PROCESS INVOLVING THE USE OF METAL MASKING AGAINST ION BOMBARDMENT IN THE FORMATION OF SEMICONDUCTOR DEVICES. IN PARTICULAR, THE METAL MASK IS OXIDIZED IN SITU, SUBSEQUENT TO THE ION BOMBARDMENT, IN ORDER TO PROTECT THE DEVICE. ESPECIALLY USEFUL FOR THE MASK ARE THOSE METALS WHICH EXPAND UPON OXIDATION, IN ORDER TO PROTECT THE EDGES OF THE P-N-JUNCTIONS FORMED BY THE ION BOMBARDMENT.
Inventors
- 👤 Martin P Lepselter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 21:36
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P76/00; H10P76/40; H10P95/00; H10W; H10W20/00; H10W20/40; H10W42/00; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69392; H10P14/69395
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-01-25 | 1974-07-27 | 1975-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-01-25 | 1978-07-27 | 1979-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-01-25 | 1982-07-27 | 1983-01-26 | $7700.00 | Window Closed / Lapsed |