Patent US2883518A successfully refreshed from Google Patents.
Patent US5565697A successfully refreshed from Google Patents.
US5565697A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor structure having island forming grooves
Assignee: Ricoh Co Ltd
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Filing: 1995-06-02
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Granted: 1996-10-15
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Expires: 2015-06-02
Abstract
Abstract A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.
Inventors
- 👤 Toshifumi Asakawa
- 👤 Daisuke Kosaka
- 👤 Haruo Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3814; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/381; H10P14/382; H10P34/00; H10P34/40; H10P34/42; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10W20/00; H10W20/01; H10W20/021; H10P90/1912; H10W10/011; H10W10/012; H10W10/13
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
265 words
A solid state structure comprising: a foundation made of a dielectric material; a first metal film made of an electrically conductive metal and disposed on said foundation; a monocrystalline semiconductor film disposed on said first metal film; a plurality of grooves formed in said monocrystalline semiconductor film so as to divide said monocrystalline semiconductor film into islands which are laterally spaced apart from each other and to reach an upper surface of said first metal film; a plurality of first dielectric films disposed at bottoms of some of said islands such that said first dielectric films are spaced apart from each other, each of said first dielectric films overlying an upper surface of said first metal film, and extending and projecting into adjacent islands; a plurality of second metal films each disposed on one of said first dielectric films in such a manner as to be sandwiched between said one of said first dielectric films and a selected island corresponding to each of said some of said islands, each of said second metal films extending and projecting into grooves defining said selected island; second dielectric films disposed on side walls of respective islands defining said grooves so that said islands are electrically isolated from each other; and a conductor material buried in each of grooves defined by said second dielectric films so that said selected island can be electrically connected to an outside of said structure through one of said second metal films, and islands other than said selected island can be electrically connected to the outside of said structure through said first metal film.
Claim 2
Dependent Claim
265 words
A solid state structure comprising: a foundation made of a dielectric material; a first metal film made of an electrically conductive metal and disposed on said foundation; a monocrystalline semiconductor film disposed on said first metal film; a plurality of grooves formed in said monocrystalline semiconductor film so as to divide said monocrystalline semiconductor film into islands which are laterally spaced apart from each other and to reach an upper surface of said first metal film; a plurality of first dielectric films disposed at bottoms of some of said islands such that said first dielectric films are spaced apart from each other, each of said first dielectric films overlying an upper surface of said first metal film, and extending and projecting into adjacent islands; a plurality of second metal films each disposed on one of said first dielectric films in such a manner as to be sandwiched between said one of said first dielectric films and a selected island corresponding to each of said some of said islands, each of said second metal films extending and projecting into grooves defining said selected island; second dielectric films disposed on side walls of respective islands defining said grooves so that said islands are electrically isolated from each other; and a conductor material buried in each of grooves defined by said second dielectric films so that said selected island can be electrically connected to an outside of said structure through one of said second metal films, and islands other than said selected island can be electrically connected to the outside of said structure through said first metal film.
Claim 3
Dependent Claim
41 words
A solid state structure according to claim 1, in which said selected island includes an active device, and said one of said second metal films serves as an electrode for making electrical contact to said active device in said selected island.
Claim 4
Dependent Claim
47 words
A solid state structure according to claim 1, in which an island which is laterally spaced apart from said selected island comprises MOS device of a first type formed therein, and said selected island comprises MOS device of a complementary type, said structure comprising a CMOS IC.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-15 | 2000-04-15 | 2000-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-15 | 2004-04-15 | 2004-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-15 | 2008-04-15 | 2008-10-15 | $7700.00 | Window Closed / Lapsed |