Thin silicon film electronic device

Claim 2

In an electronic device wherein a thin film of silicon is deposited on a substrate, the improvement wherein the substrate is an aluminosilicate glass having a linear coefficient of thermal expansion over the temperature range of 0°-300° C. of between 32-42×10 -7 /°C., an annealing temperature in excess of 800° C., and a viscosity at the liquidus temperature of at least about 100,000 poises, said glass consisting essentially, in percent by weight as calculated from the glass batch on an oxide basis, of 55 to 75% SiO 2 , 5 to 25% Al 2 O 3 , and at least one alkaline earth metal oxide selected from the group consisting of 9 to 15% CaO, 14 to 20% SrO, 18 to 26% BaO, and a mixture of such oxides wherein the total alkaline earth metal oxide content is equivalent on a molar basis to 9 to 15% CaO.

Claim 3

A device in accordance with claim 1 wherein the substrate glass contains a mixture of alkaline earth metal oxides and BaO is part of such mixture.

Claim 4

A device in accordance with claim 1 wherein the substrate glass is composed approximately of 66% SiO 2 , 19% Al 2 O 3 , 9% BaO and 6% CaO by weight.

Claim 5

A photovoltaic device in accordance with claim 1 wherein the substrate is in sheet form.

Claim 6

In a method of forming a photovoltaic device wherein a thin film of silicon is deposited on a substrate from a pyrolyzed vapor of a silicon compound, the improvement which comprises depositing the silicon on a substrate of aluminosilicate glass, the silicon being deposited at a temperature in excess of 700° C. but below the deformation temperature of the glass, the aluminosilicate glass having a linear coefficient of thermal expansion over the temperature range of 0°-300° C. of between 32-42×10 -7 /°C., an annealing temperature in excess of 800° C., a viscosity at the liquidus temperature of at least about 100,000 poises, and consisting essentially of, in percent by weight as calculated from the glass batch on an oxide basis, 55 to 75% SiO 2 , 5 to 25% Al 2 O 3 , and at least one alkaline earth metal oxide selected from the group consisting of 9 to 15% CaO, 14 to 20% SrO, 18 to 26% BaO, an a mixture of such alkaline earth metal oxides wherein the total alkaline earth metal oxide content is equivalent on a molar basis to 9 to 15% CaO.

Claim 7

In a method of forming a photovoltaic device wherein a thin film of silicon is deposited on a substrate from a pyrolyzed vapor of a silicon compound, the improvement which comprises depositing the silicon on a substrate of aluminosilicate glass, the silicon being deposited at a temperature in excess of 700° C. but below the deformation temperature of the glass, the aluminosilicate glass having a linear coefficient of thermal expansion over the temperature range of 0°-300° C. of between 32-42×10 -7 /°C., an annealing temperature in excess of 800° C., a viscosity at the liquidus temperature of at least about 100,000 poises, and consisting essentially of, in percent by weight as calculated from the glass batch on an oxide basis, 55 to 75% SiO 2 , 5 to 25% Al 2 O 3 , and at least one alkaline earth metal oxide selected from the group consisting of 9 to 15% CaO, 14 to 20% SrO, 18 to 26% BaO, an a mixture of such alkaline earth metal oxides wherein the total alkaline earth metal oxide content is equivalent on a molar basis to 9 to 15% CaO.

Claim 8

A method according to claim 5 wherein said silicon is deposited at a temperature between about 700°-1000° C.