US5060041A
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Amorphous silicon photosensor
Assignee: Ricoh Research Institute of General Electronics Co Ltd
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Filing: 1988-11-14
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Granted: 1991-10-22
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Expires: 2008-11-14
Abstract
Abstract An amorphous silicon photosensor comprising a substrate, a lower electrode formed on the substrate, an amorphous silicon photoelectric conversion layer formed on the lower electrode, and an upper electrode formed on the amorphous silicon photoelectric conversion layer, wherein the substrate is transparent to the incident light for photosensing, the lower electrode and the upper electrode comprises at least one of an electroconductive oxide or an electroconductive nitride, both of the electrodes for receiving the incident light for photosensing being transparent to the incident light, and the amorphous silicon photoelectric conversion layer comprises a plurality of amorphous silicon layers, and at least one of the amorphous silicon layers in contact with the electroconductive oxide or the electroconductive nitride comprises at least one of the same atoms as the constituent atoms of the electroconductive oxide or the electroconductive nitride.
Inventors
- 👤 Koichi Haga
- 👤 Akishige Murakami
- 👤 Hiroshi Miura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:52
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F10/00; H10F10/10; H10F10/17; H10F77/00; H10F77/20; H10F77/244; H10F77/247; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
193 words
An amorphous silicon photosensor, comprising a substrate, a lower electrode formed on said substrate, an amorphous silicon photoelectric conversion layer formed on said lower electrode, and an upper electrode formed on said amorphous silicon photoelectric conversion layer, wherein said substrate is transparent to incident light for photosensing, said lower electrode and said upper electrode each independently comprises at least one of an electroconductive oxide and an electroconductive nitride, both of said electrodes for receiving the incident light for photosensing being transparent to said incident light, and wherein said amorphous silicon photoelectric conversion layer comprises a plurality of amorphous silicon layers at least one of which is a hydrogenated amorphous silicon layer comprising at least one of oxygen atom and nitrogen atom, and further wherein at least one of said amorphous silicon layers in contact with at least one of said electroconductive oxide and electroconductive nitride, comprises at least one of the same atoms as constituent atoms of said electroconductive oxide and electroconductive nitride, and further wherein said amorphous photoelectric conversion layer comprises an a-Si:H layer and a pair of a-Si:O:H layers, with said a-Si:H layer being interposed between said pair of a-Si:O:H layers.
Claim 2
Dependent Claim
193 words
An amorphous silicon photosensor, comprising a substrate, a lower electrode formed on said substrate, an amorphous silicon photoelectric conversion layer formed on said lower electrode, and an upper electrode formed on said amorphous silicon photoelectric conversion layer, wherein said substrate is transparent to incident light for photosensing, said lower electrode and said upper electrode each independently comprises at least one of an electroconductive oxide and an electroconductive nitride, both of said electrodes for receiving the incident light for photosensing being transparent to said incident light, and wherein said amorphous silicon photoelectric conversion layer comprises a plurality of amorphous silicon layers at least one of which is a hydrogenated amorphous silicon layer comprising at least one of oxygen atom and nitrogen atom, and further wherein at least one of said amorphous silicon layers in contact with at least one of said electroconductive oxide and electroconductive nitride, comprises at least one of the same atoms as constituent atoms of said electroconductive oxide and electroconductive nitride, and further wherein said amorphous photoelectric conversion layer comprises an a-Si:H layer and a pair of a-Si:O:H layers, with said a-Si:H layer being interposed between said pair of a-Si:O:H layers.
Claim 3
Dependent Claim
63 words
The amorphous silicon photosensor as claimed in claim 1, wherein at least one of said amorphous silicon layers of said amorphous silicon photoelectric conversion layer in contact with at least one of said electroconductive oxide and said electroconductive nitride comprises at least an atom selected from the group consisting of third (III) group atoms and fifth (V) group atoms in the periodic table.
Claim 4
Dependent Claim
36 words
The photoelectric conversion layer photosensor as claimed in claim 1, wherein said electroconductive oxide is selected from the group consisting of ITO, TiO 2 , In 2 O 3 , SnO 2 and CrO 2 .
Claim 5
Dependent Claim
27 words
The amorphous silicon photosensor as claimed in claim 3, wherein said electroconductive oxide is selected from the group consisting of ITO and In 2 O 3 .
Claim 6
Dependent Claim
25 words
The amorphous silicon photosensor as claimed in claim 1, wherein said electroconductive nitride is selected from the group consisting of InN, SnN, TiN and Bn.
Claim 7
Dependent Claim
23 words
The amorphous silicon photosensor as claimed in claim 5, wherein said electroconductive nitride is selected from the group consisting of InN and Bn.
Claim 8
Dependent Claim
19 words
The amorphous silicon photosensor as claimed in claim 1, wherein said hydrogenated amorphous silicon layer is an A-Si:H layer.
Claim 9
Dependent Claim
19 words
The amorphous silicon photosensor as claimed in claim 1, wherein said hydrogenated amorphous silicon layer is an a-Si:N:H layer.
Claim 10
Dependent Claim
19 words
The amorphous silicon photosensor as claimed in claim 1, wherein said hydrogenated amorphous silicon layer is an α-Si:O:H layer.
Claim 11
Dependent Claim
24 words
The amorphous silicon photosensor as claimed in claim 1, wherein said amorphous silicon photoelectric conversion layer comprises an a-Si:H layer and an a-Si:O:H layer.
Claim 12
Dependent Claim
24 words
The amorphous silicon photosensor as claimed in claim 1, wherein said amorphous silicon photoelectric conversion layer comprises an a-Si:H layer and an a-Si:O:H layer.
Claim 13
Dependent Claim
193 words
An amorphous silicon photosensor, comprising a substrate, a lower electrode formed on said substrate, an amorphous silicon photoelectric conversion layer formed on said lower layer electrode, and an upper electrode formed on said amorphous silicon photoelectric conversion layer, wherein said substrate is transparent to incident light for photosensing, said lower electrode and said upper electrode each independently comprises at least one of an electroconductive oxide and an electroconductive nitride, both of said electrodes for receiving the incident light for photosensing being transparent to said incident light, and wherein said amorphous silicon photoelectric conversion layer comprises a plurality of amorphous silicon layers at least one which is a hydrogenated amorphous silicon layer comprising at least one of oxygen atom and nitrogen atom, and further wherein at least one of said amorphous silicon layers in contact with at least one of said electroconductive oxide and electroconductive nitride, comprises at least one of the same atoms as constituent atoms of said electroconductive and electroconductive nitride, and further wherein said amorphous silicon photoelectric conversion layer comprises an a-Si:H layer and a pair of a-Si:N:H layers, with said a-Si:H layer being interposed between said pair of a-Si:N:H layers.
Claim 14
Dependent Claim
193 words
An amorphous silicon photosensor, comprising a substrate, a lower electrode formed on said substrate, an amorphous silicon photoelectric conversion layer formed on said lower layer electrode, and an upper electrode formed on said amorphous silicon photoelectric conversion layer, wherein said substrate is transparent to incident light for photosensing, said lower electrode and said upper electrode each independently comprises at least one of an electroconductive oxide and an electroconductive nitride, both of said electrodes for receiving the incident light for photosensing being transparent to said incident light, and wherein said amorphous silicon photoelectric conversion layer comprises a plurality of amorphous silicon layers at least one which is a hydrogenated amorphous silicon layer comprising at least one of oxygen atom and nitrogen atom, and further wherein at least one of said amorphous silicon layers in contact with at least one of said electroconductive oxide and electroconductive nitride, comprises at least one of the same atoms as constituent atoms of said electroconductive and electroconductive nitride, and further wherein said amorphous silicon photoelectric conversion layer comprises an a-Si:H layer and a pair of a-Si:N:H layers, with said a-Si:H layer being interposed between said pair of a-Si:N:H layers.
Claim 15
Dependent Claim
63 words
The amorphous silicon photosensor as claimed in claim 12, wherein at least one of said amorphous silicon layers of said amorphous silicon photoelectric conversion layer in contact with at least one of said electroconductive oxide and said electroconductive nitride comprises at least an atom selected from the group consisting of third (III) group atoms and fifth (V) group atoms in the periodic table.
Claim 16
Dependent Claim
36 words
The photoelectric conversion layer photosensor as claimed in claim 12, wherein said electroconductive oxide is selected from the group consisting of ITO, TiO 2 , In 2 O 3 , SnO 2 and CrO 2 .
Claim 17
Dependent Claim
27 words
The amorphous silicon photosensor as claimed in claim 14, wherein said electroconductive oxide is selected from the group consisting of ITO and In 2 O 3 .
Claim 18
Dependent Claim
25 words
The amorphous silicon photosensor as claimed in claims 12, wherein said electroconductive nitride is selected from the group consisting of InN, SnN, TiN and Bn.
Claim 19
Dependent Claim
23 words
The amorphous silicon photosensor as claimed in claim 16, wherein said electroconductive nitride is selected from the group consisting of InN and Bn.
Claim 20
Dependent Claim
19 words
The amorphous silicon photosensor as claimed in claim 12, wherein said hydrogenated amorphous silicon layer is an A-Si:H layer.
Claim 21
Dependent Claim
19 words
The amorphous silicon photosensor as claimed in claim 12, wherein said hydrogenated amorphous silicon layer is an a-Si:N:H layer.
Claim 22
Dependent Claim
19 words
The amorphous silicon photosensor as claimed in claim 12, wherein said hydrogenated amorphous silicon layer is an α-Si:O:H layer.
Claim 23
Dependent Claim
24 words
The amorphous silicon photosensor as claimed in claim 12, wherein said amorphous silicon photoelectric conversion layer comprises an a-Si:H layer and an a-Si:O:H layer.
Claim 24
Dependent Claim
24 words
The amorphous silicon photosensor as claimed in claim 12, wherein said amorphous silicon photoelectric conversion layer comprises an a-Si:H layer and an a-Si:O:H layer.
Claim 25
Dependent Claim
198 words
An amorphous silicon photosensor, comprising a substrate, a lower electrode formed on said substrate, an amorphous silicon photoelectric conversion layer formed on said lower electrode, and an upper electrode formed on said amorphous silicon photoelectric conversion layer, wherein said substrate is transparent to incident light for photosensing, said lower electrode and said upper electrode each independently comprises at least one of an electrode conductive oxide and an electroconductive nitride, both of said electrodes for receiving the incident light for photosensing being transparent to said incident light, and wherein said amorphous silicon photoelectric conversion layer comprises a plurality of amorphous silicon layers at least one of which is a hydrogenated amorphous silicon layer comprising at least one of oxygen atom and nitrogen atom, and further wherein at least one of said amorphous silicon layers in contact with at least one of said electroconductive oxide and electroconductive nitride, comprises at least one of the same atoms as constituent atoms of said electroconductive oxide and electroconductive nitride, and further wherein said amorphous silicon photoelectric conversion layer comprises an a-Si:H layer, and a-Si:N:H layer and an a-Si:O:H layer, with said a-Si:H layer being interposed between said a-Si:N:H layer and said a-Si:O:H layer.
Claim 26
Dependent Claim
198 words
An amorphous silicon photosensor, comprising a substrate, a lower electrode formed on said substrate, an amorphous silicon photoelectric conversion layer formed on said lower electrode, and an upper electrode formed on said amorphous silicon photoelectric conversion layer, wherein said substrate is transparent to incident light for photosensing, said lower electrode and said upper electrode each independently comprises at least one of an electrode conductive oxide and an electroconductive nitride, both of said electrodes for receiving the incident light for photosensing being transparent to said incident light, and wherein said amorphous silicon photoelectric conversion layer comprises a plurality of amorphous silicon layers at least one of which is a hydrogenated amorphous silicon layer comprising at least one of oxygen atom and nitrogen atom, and further wherein at least one of said amorphous silicon layers in contact with at least one of said electroconductive oxide and electroconductive nitride, comprises at least one of the same atoms as constituent atoms of said electroconductive oxide and electroconductive nitride, and further wherein said amorphous silicon photoelectric conversion layer comprises an a-Si:H layer, and a-Si:N:H layer and an a-Si:O:H layer, with said a-Si:H layer being interposed between said a-Si:N:H layer and said a-Si:O:H layer.
Claim 27
Dependent Claim
63 words
The amorphous silicon photosensor as claimed in claim 23, wherein at least one of said amorphous silicon layers of said amorphous silicon photoelectric conversion layer in contact with at least one of said electroconductive oxide and said electroconductive nitride comprises at least an atom selected from the group consisting of third (III) group atoms and fifth (V) group atoms in the periodic table.
Claim 28
Dependent Claim
36 words
The photoelectric conversion layer photosensor as claimed in claim 23, wherein said electroconductive oxide is selected from the group consisting of ITO, TiO 2 , In 2 O 3 , SnO 2 and CrO 2 .
Claim 29
Dependent Claim
27 words
The amorphous silicon photosensor as claimed in claim 25, wherein said electroconductive oxide is selected from the group consisting of ITO and In 2 O 3 .
Claim 30
Dependent Claim
25 words
The amorphous silicon photosensor as claimed in claims 23, wherein said electroconductive nitride is selected from the group consisting of InN, SnN, TiN and Bn.
Claim 31
Dependent Claim
23 words
The amorphous silicon photosensor as claimed in claim 27, wherein said electroconductive nitride is selected from the group consisting of InN and Bn.
Claim 32
Dependent Claim
19 words
The amorphous silicon photosensor as claimed in claim 23, wherein said hydrogenated amorphous silicon layer is an A-Si:H layer.
Claim 33
Dependent Claim
19 words
The amorphous silicon photosensor as claimed in claim 23, wherein said hydrogenated amorphous silicon layer is an a-Si:N:H layer.
Claim 34
Dependent Claim
19 words
The amorphous silicon photosensor as claimed in claim 23, wherein said hydrogenated amorphous silicon layer is an α-Si:O:H layer.
Claim 35
Dependent Claim
24 words
The amorphous silicon photosensor as claimed in claim 23, wherein said amorphous silicon photoelectric conversion layer comprises an a-Si:H layer and an a-Si:O:H layer.
Claim 36
Dependent Claim
24 words
The amorphous silicon photosensor as claimed in claim 23, wherein said amorphous silicon photoelectric conversion layer comprises an a-Si:H layer and an a-Si:O:H layer.
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