US4892594A
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Photovoltaic element
Assignee: Canon Inc
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Filing: 1988-10-05
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Granted: 1990-01-09
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Expires: 2008-10-05
Abstract
Abstract A photovoltaic element comprises a p-type layer comprising a p-type transition metal oxide, an active layer comprising an amorphous silicon, a n-type layer comprising an amorphous silicon containing a n-type impurity, and an electrode.
Inventors
- 👤 Ryoji Fujiwara
- 👤 Minori Yamaguchi
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:11
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F10/12; H10F10/17; H10F77/00; H10F77/10; H10F77/12; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
70 words
A photovoltaic element having a p-i-n laminated structure on a substrate, comprising in sequence: a first electroconductive layer; a transparent iridium oxide layer having a thickness of 20 to 5000 Å and p-type conductivity; a hydrogenated amorphous silicon active layer having a thickness of 1000-20,000 Å and i-type conductivity; a hydrogenated amorphous silicon layer having a thickness of 50 to 2000 Å and n-type conductivity; and a second electrocondouctive layer.
Claim 2
Dependent Claim
70 words
A photovoltaic element having a p-i-n laminated structure on a substrate, comprising in sequence: a first electroconductive layer; a transparent iridium oxide layer having a thickness of 20 to 5000 Å and p-type conductivity; a hydrogenated amorphous silicon active layer having a thickness of 1000-20,000 Å and i-type conductivity; a hydrogenated amorphous silicon layer having a thickness of 50 to 2000 Å and n-type conductivity; and a second electrocondouctive layer.
Claim 3
Dependent Claim
28 words
A photovoltaic element according to claim 1, wherein the n-type layer contains a dopant impurity selected from the atoms belonging to the group VA of the periodic table.
Claim 4
Dependent Claim
12 words
A photovoltaic element according to claim 1, wherein the substrate is flexible.
Claim 5
Dependent Claim
15 words
A photovoltaic element according to claim 1, wherein the p-type iridium oxide contains hydrogen atoms.
Claim 6
Dependent Claim
25 words
A photovoltaic element according to claim 4, wherein the content of hydrogen atoms is 0.01 atomic % to 50 atomic % per one metal atom.
Claim 7
Dependent Claim
17 words
A photovoltaic element according to claim 1, wherein the iridium oxide has the formula: IrOx.sub.3 (1.5≦x.sub.3 ≦2.0.)
Claim 8
Dependent Claim
15 words
A photovoltaic element according to claim 6, wherein the iridium oxide further contains hydrogen atoms.
References Cited (Backward Citations)
JPS5693376A
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JPS5917287A
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US4535195A
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EP0155106A2
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US4689438A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-08 | 1993-07-10 | 1994-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-08 | 1997-07-10 | 1998-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-08 | 2001-07-10 | 2002-01-09 | $7700.00 | Window Closed / Lapsed |