Color sensor with amorphous pin structure

Claim 2

A color measuring apparatus comprising a color sensor having a layered body obtained by stacking a first photoelectric sensor which is constituted by an amorphous semiconductor having a PIN structure and a spectral sensitivity which has a peak with respect to blue light and a second photoelectric sensor which is constituted by an amorphous semiconductor having a PIN structure and a spectral sensitivity which has a peak with respect to red light, so that a p-n junction is formed therebetween, a pair of electrodes provided at both ends of said body, at least one of said pair of electrodes being transparent, bias voltage applying means for applying at least three different bias voltages between said pair of electrodes using a first bias voltage V a to obtain a first spectral sensitivity I a , a second bias voltage V b to obtain a second spectral sensitivity I b and a third bias voltage V c to obtain a third spectral sensitivity I c with the sensitivities I a , I b and I c being the three primary colors green, red and blue, respectively, with the spectral sensitivities being related by corresponding currents I Va , I Vb and I Vc produced by the respective bias voltages V a , V b and V c as I a =I Va , I b =I Vb -I Va and I c =I Vc -I Vb , photocurrent detecting means for detecting photocurrents I Va , I Vb and I Vc corresponding to respective bias voltages, and color discriminating means for discriminating a color of light incident on said color sensor on the basis of said photocurrent detecting means.

Claim 3

An apparatus as set forth in claim 1 wherein an I-layer of said first sensor is thinner than an I-layer of said second sensor and said transparent electrode of said pair of electrode faces said first sensor.

Claim 4

An apparatus as set forth in claim 2 wherein said I-layer of said first sensor is approximately 1000 Å and said I-layer of said second sensor is approximately 5000 Å,

Claim 5

An apparatus as set forth in claim 3 wherein said bias voltages V a , V b and V c are, respectively, 0 V, -3V and -6 V.

Claim 6

A color measuring apparatus comprising a color sensor having a layered body obtained by stacking a first photoelectric sensor which is constituted by an amorphous semiconductor having a "PIN" structure and a spectral sensitivity which has a peak with respect to blue light and a second photoelectric sensor which is constituted by an amorphous semiconductor having a "PIN" structure and a spectral sensitivity which has a peak with respect to red light, so that a p-n junction is formed therebetween, a common electrode provided at one end of said body, three individual electrodes provided at the other end of said body to respectively face said common electrode, at least either said common electrode or said individual electrodes being transparent, bias voltage applying means for applying different bias voltages between the respective individual electrodes and said common electrodes using a first bias voltage V a to obtain a first spectral sensitivity I a , a second bias voltage V b to obtain a second spectral sensitivity I b and a third bias voltage V c to obtain a third spectral sensitivity I c with the sensitivities I a , I b and I c being the three primary colors green, red and blue, respectively, with the spectral sensitivities being related by corresponding currents I Va , I Vb and I Vc produced by the respective bias voltages V a , V b and V c as I a =I Va , I b =I Vb -I Va and I c =I Vc -I Vb , photo-current detecting means for detecting a photo-current for each of said individual electrodes, and color discriminating means for discriminating a color of light incident on said color sensor on the basis of said photo-current detecting means.

Claim 7

A color measuring apparatus comprising a color sensor having a layered body obtained by stacking a first photoelectric sensor which is constituted by an amorphous semiconductor having a "PIN" structure and a spectral sensitivity which has a peak with respect to blue light and a second photoelectric sensor which is constituted by an amorphous semiconductor having a "PIN" structure and a spectral sensitivity which has a peak with respect to red light, so that a p-n junction is formed therebetween, a common electrode provided at one end of said body, three individual electrodes provided at the other end of said body to respectively face said common electrode, at least either said common electrode or said individual electrodes being transparent, bias voltage applying means for applying different bias voltages between the respective individual electrodes and said common electrodes using a first bias voltage V a to obtain a first spectral sensitivity I a , a second bias voltage V b to obtain a second spectral sensitivity I b and a third bias voltage V c to obtain a third spectral sensitivity I c with the sensitivities I a , I b and I c being the three primary colors green, red and blue, respectively, with the spectral sensitivities being related by corresponding currents I Va , I Vb and I Vc produced by the respective bias voltages V a , V b and V c as I a =I Va , I b =I Vb -I Va and I c =I Vc -I Vb , photo-current detecting means for detecting a photo-current for each of said individual electrodes, and color discriminating means for discriminating a color of light incident on said color sensor on the basis of said photo-current detecting means.

Claim 8

An apparatus as set forth in claim 5 wherein an I-layer of said first sensor is thinner than an I-layer of said second sensor and said transparent electrode of said pair of electrode faces said first sensor.

Claim 9

An apparatus as set forth in claim 6 wherein said I-layer of said first sensor is approximately 1,000 Å and said I-layer of said second sensor is approximately 5000 Å.

Claim 10

An apparatus as set forth in claim 7 wherein said bias voltages V a , V b and V c include, respectively, 0 V, -3V and -6 V.