US4616246A
Expired / Lapsed
US
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Enhancement of photoconductivity in pyrolytically prepared semiconductors
Assignee: Chronar Corp
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Filing: 1982-11-22
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Granted: 1986-10-07
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Expires: 2002-11-22
Abstract
Abstract A semiconductor device with an intrinsic layer that exhibits enhanced photoconductivity by the addition of a non-incidental amount of an n-type dopant.
Inventors
- 👤 Alan E. Delahoy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:40
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F10/00; H10F10/10; H10F10/17; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
69 words
In a semiconductor device comprising a first semiconductor layer of a first conductivity type, an intrinsic semiconductor layer on said first semiconductor layer, and a second semiconductor layer of a second conductivity type on said intrinsic semiconductor layer; said intrinsic semiconductor layer being formed by the decomposition of one or more gaseous semiconductanes, which layer exhibits enhanced photoconductivity by the addition of a non-incidental amount of an n-type dopant.
Claim 2
Dependent Claim
69 words
In a semiconductor device comprising a first semiconductor layer of a first conductivity type, an intrinsic semiconductor layer on said first semiconductor layer, and a second semiconductor layer of a second conductivity type on said intrinsic semiconductor layer; said intrinsic semiconductor layer being formed by the decomposition of one or more gaseous semiconductanes, which layer exhibits enhanced photoconductivity by the addition of a non-incidental amount of an n-type dopant.
Claim 3
Dependent Claim
22 words
The layer of claim 1 wherein said n-type dopant is present in an amount on the order of 100 parts per million.
Claim 4
Dependent Claim
21 words
The layer of claim 1 wherein said n-dopant is present in an amount on the order of 500 parts per million.
Claim 5
Dependent Claim
27 words
The layer of claim 1 wherein said n-type dopant is present in the range from about 500 parts per million to less than 1,000 parts per million.
Claim 6
Dependent Claim
18 words
The layer of claim 1 wherein said n-type dopant is selected from the class of phosphors, and arsenicals.
Claim 7
Dependent Claim
22 words
The layer of claim 1 wherein said n-type dopant is selected from the class of double donor element including sulfur and tellurium.
Claim 8
Dependent Claim
9 words
The layer of claim 1 formed by pyrolytic decomposition.
Claim 9
Dependent Claim
17 words
The layer of claim 1 formed into a device by the combination of a n-type contact therewith.
Claim 10
Dependent Claim
10 words
The device of claim 8 deposited on a non-conducting substrate.
References Cited (Backward Citations)
US4459163A
Cited
US4478654A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-10-06 | 1990-04-07 | 1990-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-10-06 | 1994-04-07 | 1994-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-10-06 | 1998-04-07 | 1998-10-07 | $7700.00 | Window Closed / Lapsed |