US4478654A
Expired / Lapsed
US
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Amorphous silicon carbide method
Assignee: CHRONAR CORP PRINCETON NJ A CORP OF
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Filing: 1982-01-07
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Granted: 1984-10-23
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Expires: 2002-01-07
Abstract
Abstract Preparation of amorphous semiconductor carbides that are suitable for use in a wide variety of devices by the pyrolytic decomposition of a mixture of one or more semiconductanes and one or more carbanes.
Inventors
- 👤 Shek-Chung Gau
- 👤 Vikram L. Dalal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:17
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/325; H; H10; H10D; H10D62/00; H10D62/40; H10D62/402; H10D62/80; H10D62/83; H10D8/00; H10D8/50; H10F; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; H10F77/1665; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S420/00; Y10S420/903; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
48 words
The method of preparing an amorphous semiconducting alloy of a semiconductor element, carbon, and hydrogen, which comprises pyrolytically decomposing a gaseous mixture of one or more polysemiconductanes and one or more carbanes exerting a partial pressure in the range above about 1 Torr and below about 1 atmosphere.
Claim 2
Independent Claim
48 words
The method of preparing an amorphous semiconducting alloy of a semiconductor element, carbon, and hydrogen, which comprises pyrolytically decomposing a gaseous mixture of one or more polysemiconductanes and one or more carbanes exerting a partial pressure in the range above about 1 Torr and below about 1 atmosphere.
Claim 3
Dependent Claim
10 words
The method of claim 1 wherein the carbanes are polycarbanes.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein the polysemiconductanes are polysilanes or polygermanes.
Claim 5
Dependent Claim
22 words
The method of claim 1 wherein the pyrolytic decomposition takes place in the range from about 300° C. to about 500° C.
Claim 6
Dependent Claim
12 words
The method of claim 1 wherein said mixture includes an inert gas.
Claim 7
Dependent Claim
22 words
The method of claim 5 wherein the inert gas is selected from the class consisting of argon, helium, xenon, neon, and hydrogen.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein said mixture includes one or more dopants.
Claim 9
Dependent Claim
16 words
The method of claim 7 wherein said mixture includes a dopant gas and an inert gas.
Claim 10
Dependent Claim
29 words
The method of claim 8 wherein the dopant is a gas selected from the class consisting of phosphine, arsine, and stibine; thereby to produce an n-type doped amorphous alloy.
Claim 11
Dependent Claim
19 words
The method of claim 8 wherein the dopant is diborane gas; thereby to produce a p-type doped amorphous alloy.
Claim 12
Dependent Claim
12 words
The method of claim 10 wherein said dopant is an organo-metallic material.
Claim 13
Dependent Claim
25 words
The method of claim 11 wherein said organo-metallic material is selected from the class consisting of tri-methyl aluminum, tri-ethyl aluminum, tri-methyl gallium and tri-ethyl gallium.
Claim 14
Dependent Claim
13 words
The method of claim 11 wherein said organo-metallic material is an aliphatic-metallic material.
References Cited (Backward Citations)
US3520740A
Cited
US4109271A
Cited
US4239554A
Cited
US4329699A
Cited
US4363828A
Cited
US4357179A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-10-23 | 1988-04-23 | 1988-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-10-23 | 1992-04-23 | 1992-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-10-23 | 1996-04-23 | 1996-10-23 | $7700.00 | Window Closed / Lapsed |