US3520740A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of epitaxial growth of alpha silicon carbide by pyrolytic decomposition of a mixture of silane,propane and hydrogen at atmospheric pressure
Assignee: General Electric Co
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Filing: 1967-05-18
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Granted: 1970-07-14
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Expires: 1987-05-18
Abstract
No abstract record available.
Inventors
- 👤 Arrigo Addamiano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:27
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; Y; Y10; Y10S; Y10S148/00; Y10S148/148; Y10S252/00; Y10S252/95; Y10S252/951; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1973-07-13 | 1974-01-12 | 1974-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1977-07-13 | 1978-01-12 | 1978-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1981-07-13 | 1982-01-12 | 1982-07-14 | $7700.00 | Window Closed / Lapsed |