US4329699A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing the same
Assignee: Panasonic Holdings Corp
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Filing: 1980-03-21
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Granted: 1982-05-11
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Expires: 2000-03-21
Abstract
Abstract A semiconductor device utilizing amorphous Si1-xCx(0</=x</=1) containing hydrogen. Through a high frequency glow discharge process or a high frequency sputtering process, the composition x is varied to form a heterojunction between amorphous Si1-xCx layers, and electrodes are mounted to the layers to complete the device. The amorphous material is desirably selected to have a forbidden band width of 1.7 to 3.2 eV so that the sensitivity of the device can cover the visible range. Because of the amorphous layers, freedom of type and shape of the substrate of the device is large. The dark resistance of the layers is large to improve the photoconductive characteristics of the semiconductor device.
Inventors
- 👤 Shin-ichiro Ishihara
- 👤 Koshiro Mori
- 👤 Tsuneo Tanaka
- 👤 Seiichi Nagata
- 👤 Masakazu Fukai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 04:28
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F10/165; H10F10/166; H10F30/00; H10F30/10; H10F30/15; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; H10F77/1665; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
60 words
A semiconductor device comprising: a substrate, first and second amorphous Si 1-x C x (0≦×<1) films including hydrogen formed on one surface of said substrate, said first and second amorphous Si 1-x C x films having different x values, respectively, and a pair of transparent electrodes provided to contact said first and second amorphous Si 1-x C x films respectively.
Claim 2
Dependent Claim
60 words
A semiconductor device comprising: a substrate, first and second amorphous Si 1-x C x (0≦×<1) films including hydrogen formed on one surface of said substrate, said first and second amorphous Si 1-x C x films having different x values, respectively, and a pair of transparent electrodes provided to contact said first and second amorphous Si 1-x C x films respectively.
Claim 3
Dependent Claim
13 words
A semiconductor device as claimed in claim 1, wherein said substrate is transparent.
Claim 4
Dependent Claim
52 words
A semiconductor device as claimed in claim 2, wherein one of said pair of electrodes is disposed between the transparent substrate and one of said first and second amorphous films and the other one of said pair of electrodes is disposed on the other one of said first and second amorphous films.
Claim 5
Dependent Claim
33 words
A semiconductor device as claimed in claim 3, wherein at least one of said first and second amorphous films is at least partly doped with an impurity of one of p-type and n-type.
References Cited (Backward Citations)
US3716844A
Cited
US4109271A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-05-10 | 1985-11-09 | 1986-05-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-05-10 | 1989-11-09 | 1990-05-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-05-10 | 1993-11-09 | 1994-05-11 | $7700.00 | Window Closed / Lapsed |