Semiconductor device

Claim 2

A semiconductor device comprising: a substrate having a main surface; a plurality of semiconductor single-crystal layers in spatially isolated relationship from each other which are formed on the main surface of the substrate; an insulation layer between said substrate and each of said semiconductor single-crystal layers; a plurality of single-crystal semiconductor intermetallic compound layers formed respectively on the semiconductor single-crystal layers and used as electrodes for semiconductor elements; a plurality of semiconductor epitaxial layers respectively formed on part of the semiconductor intermetallic compound layers, each said semiconductor epitaxial layer being used as an active layer of a semiconductor element; first wiring means respectively connected electrically to each of the semiconductor epitaxial layers; and second wiring means respectively connected electrically to each of the single-crystal semiconductor intermetallic compound layers by being in contact with a part of the surface of said single crystal semiconductor intermetallic compound layer on which the semiconductor epitaxial layer is not formed.

Claim 3

A semiconductor device according to claim 1, wherein the substrate includes a semiconductor single-crystal substrate, and the insulation layer includes an oxide layer formed by oxidizing a predetermined region of the substrate.

Claim 4

A semiconductor deice according to claim 1, wherein some of the semiconductor elements have a vertical current path in the semiconductor epitaxial layer thereof.

Claim 5

A semiconductor device according to claim 1, wherein some of the semiconductor elements have a horizontal current path in the semiconductor epitaxial layer thereof.

Claim 6

A semiconductor device according to claim 1, wherein a semiconductor element with a semiconductor epitaxial layer of N conduction type and a semiconductor element with a semiconductor epitaxial layer of P conduction type are disposed on the same substrate.

Claim 7

A semiconductor device comprising: a substrate formed of silicon, having a main surface; a plurality of silicon single-crystal layer means, spatially isolated from each other, formed on the main surface of the substrate; an oxide layer, between said silicon single-crystal layer means and said substrate; single-crystal semiconductor intermetallic compound layer means, formed on each of the silicon single-crystal layer means respectively; semiconductor epitaxial layer means formed on part of the semiconductor intermetallic compound layer means, the semiconductor epitaxial layer means being a type selected form the group consisting of N and P conduction types; first wiring means connected electrically to the semiconductor epitaxial layer means; and second wiring means connected electrically to the single-crystal semiconductor intermetallic compound layer means by being in contact with a part of the surface of said semiconductor intermetallic compound layer means on which the semiconductor epitaxial layer means is not formed.

Claim 8

A semiconductor device comprising: a substrate formed of silicon, having a main surface; a plurality of silicon single-crystal layer means, spatially isolated from each other, formed on the main surface of the substrate; an oxide layer, between said silicon single-crystal layer means and said substrate; single-crystal semiconductor intermetallic compound layer means, formed on each of the silicon single-crystal layer means respectively; semiconductor epitaxial layer means formed on part of the semiconductor intermetallic compound layer means, the semiconductor epitaxial layer means being a type selected form the group consisting of N and P conduction types; first wiring means connected electrically to the semiconductor epitaxial layer means; and second wiring means connected electrically to the single-crystal semiconductor intermetallic compound layer means by being in contact with a part of the surface of said semiconductor intermetallic compound layer means on which the semiconductor epitaxial layer means is not formed.

Claim 9

A semiconductor device comprising: a substrate having a main surface; an insulation layer on the main surface of the substrate; a semiconductor single-crystal layer formed on part of the insulation layer; a single-crystal semiconductor intermetallic compound layer formed on the semiconductor single-crystal layer and used as an electrode of a semiconductor element; a semiconductor epitaxial layer formed on part of the semiconductor intermetallic compound layer to be used as an active layer for the semiconductor element; first wiring means connected electrically to the semiconductor epitaxial layer; and second wiring means connected electrically to the single-crystal semiconductor intermetallic compound layer by being in contact with a part of the surface of said semiconductor intermetallic compound layer on which the semiconductor epitaxial layer is not formed.

Claim 10

A semiconductor device comprising: a substrate having a main surface; an insulation layer on the main surface of the substrate; a semiconductor single-crystal layer formed on part of the insulation layer; a single-crystal semiconductor intermetallic compound layer formed on the semiconductor single-crystal layer and used as an electrode of a semiconductor element; a semiconductor epitaxial layer formed on part of the semiconductor intermetallic compound layer to be used as an active layer for the semiconductor element; first wiring means connected electrically to the semiconductor epitaxial layer; and second wiring means connected electrically to the single-crystal semiconductor intermetallic compound layer by being in contact with a part of the surface of said semiconductor intermetallic compound layer on which the semiconductor epitaxial layer is not formed.

Claim 11

A semiconductor device according to claim 7, wherein the substrate includes a semiconductor single-crystal substrate, and the insulation layer includes an oxide layer formed by oxidizing a predetermined region in the semiconductor single-crystal substrate.

Claim 12

A semiconductor device according to claim 7, wherein the semiconductor element formed in and on the semiconductor epitaxial layer a has a vertical current path in the semiconductor epitaxial layer.

Claim 13

A semiconductor device according to claim 7, wherein a semiconductor element with a semiconductor epitaxial layer of N conduction type and a semiconductor element with a semiconductor epitaxial layer of P conduction type are formed on the same substrate.

Claim 14

A semiconductor device comprising: a substrate made of silicon having a main surface; an oxide layer on said substrate; a silicon single-crystal layer formed on a part of the main surface of the substrate with said oxide layer therebetween; a single-crystal semiconductor intermetallic compound layer formed on the silicon single-crystal layer; a semiconductor epitaxial layer formed partially on the semiconductor intermetallic compound layer and used as an active layer of a semiconductor element having a vertical current path, the semiconductor epitaxial layer selected from the group consisting of N and P conduction types; first wiring means connected electrically to the semiconductor epitaxial layer; an second wiring means connected electrically to the single-crystal semiconductor intermetallic compound layers by being in contact with a part of the surface of said semiconductor intermetallic layer surface on which the semiconductor epitaxial layer is not formed.

Claim 15

A semiconductor device comprising: a substrate made of silicon having a main surface; an oxide layer on said substrate; a silicon single-crystal layer formed on a part of the main surface of the substrate with said oxide layer therebetween; a single-crystal semiconductor intermetallic compound layer formed on the silicon single-crystal layer; a semiconductor epitaxial layer formed partially on the semiconductor intermetallic compound layer and used as an active layer of a semiconductor element having a vertical current path, the semiconductor epitaxial layer selected from the group consisting of N and P conduction types; first wiring means connected electrically to the semiconductor epitaxial layer; an second wiring means connected electrically to the single-crystal semiconductor intermetallic compound layers by being in contact with a part of the surface of said semiconductor intermetallic layer surface on which the semiconductor epitaxial layer is not formed.

Claim 16

A semiconductor device Comprising: a silicon single-crystal substrate having a main surface; a buried silicon oxide layer disposed on part of the silicon single-crystal substrate so that a silicon ingle-crystal area of a predetermined shape is left on the main surface; a silicon single-crystal layer disposed on a whole surface of the silicon single-crystal are a of the predetermined shape; a single-crystal silicide layer, said layer using the silicon single-crystal layer patterned on the predetermined shape as a seed material to transform the single-crystal silicide layer into plural single-crystal silicide layers, the single-crystal silicide layers being respectively used as electrodes of a semiconductor element having a vertical current path; first conduction type silicon epitaxial layers, each said layer partially using the single-crystal silicide layers respectively used as a seed material, which become respectively an active layer for a semiconductor element, and at least one of the first conduction type silicon epitaxial layers including the semiconductor element having the vertical current path; second conduction type silicon epitaxial layers partially disposed on areas excepting areas on which the first conduction type silicon epitaxial layers are disposed, by using the single-crystal single-crystal silicide layers respectively used as a seed material, and the second conduction type silicon epitaxial layers becoming respectively an active layer for a semiconductor element; first wiring means respectively connected electrically to each of the first and second conduction type silicon epitaxial layers; and second wiring means respectively electrically connected to each of the single-crystal silicide layers.

Claim 17

A semiconductor device Comprising: a silicon single-crystal substrate having a main surface; a buried silicon oxide layer disposed on part of the silicon single-crystal substrate so that a silicon ingle-crystal area of a predetermined shape is left on the main surface; a silicon single-crystal layer disposed on a whole surface of the silicon single-crystal are a of the predetermined shape; a single-crystal silicide layer, said layer using the silicon single-crystal layer patterned on the predetermined shape as a seed material to transform the single-crystal silicide layer into plural single-crystal silicide layers, the single-crystal silicide layers being respectively used as electrodes of a semiconductor element having a vertical current path; first conduction type silicon epitaxial layers, each said layer partially using the single-crystal silicide layers respectively used as a seed material, which become respectively an active layer for a semiconductor element, and at least one of the first conduction type silicon epitaxial layers including the semiconductor element having the vertical current path; second conduction type silicon epitaxial layers partially disposed on areas excepting areas on which the first conduction type silicon epitaxial layers are disposed, by using the single-crystal single-crystal silicide layers respectively used as a seed material, and the second conduction type silicon epitaxial layers becoming respectively an active layer for a semiconductor element; first wiring means respectively connected electrically to each of the first and second conduction type silicon epitaxial layers; and second wiring means respectively electrically connected to each of the single-crystal silicide layers.

Claim 18

A semiconductor device according to claim 12 wherein the single-crystal silicide layer is perfectly single-crystallized on the whole main surface of the silicon signle-crystal substrate by a process of converting a silicide forming metal film or silicide film into an amorphous state and thereafter heat treating the amorphous silicide forming metal film or silicide film.