US4643950A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: National Institute of Advanced Industrial Science and Technology
•
Filing: 1986-03-06
•
Granted: 1987-02-17
•
Expires: 2006-03-06
Abstract
Abstract In a laminated semiconductor device comprising a substrate, an insulating layer formed on the substrate and at least one active layer formed on the insulating layer, the insulating layer contains an AlN layer as an interlayer insulating film.
Inventors
- 👤 Atsushi Ogura
- 👤 Koji Egami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 05:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3814; H10P14/3818; H10P14/382; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/65; H10P14/6502; H10P14/6506; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
36 words
A semiconductor device comprising: a substrate, an insulating layer formed on said substrate, said insulating layer containing an AlN layer as an interlaid insulating film, and at lease one active layer formed on said insulating layer.
Claim 2
Dependent Claim
36 words
A semiconductor device comprising: a substrate, an insulating layer formed on said substrate, said insulating layer containing an AlN layer as an interlaid insulating film, and at lease one active layer formed on said insulating layer.
Claim 3
Dependent Claim
26 words
The semiconductor device according to claim 1 wherein said substrate is made of a material selected from the group consisting of silicon, sapphire, ceramic and glass.
Claim 4
Dependent Claim
28 words
The semiconductor device according to claim 1 said insulating layer further contains a barrier layer for preventing diffusion of aluminium atoms in said AlN layer into adjacent layer.
Claim 5
Dependent Claim
21 words
The semiconductor device according to claim 3 wherein said barrier layer is made of silicon nitride (Si 3 N 4 ).
Claim 6
Dependent Claim
38 words
A semiconductor device according to claim 3 wherein said insulating layer comprises one barrie layer formed on said substrate, the AlN layer, the other barrier layer, and a silicon oxide layer which are laminated in the order mentioned.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-16 | 1990-08-18 | 1991-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-16 | 1994-08-18 | 1995-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-16 | 1998-08-18 | 1999-02-17 | $7700.00 | Window Closed / Lapsed |