US4590130A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state zone recrystallization of semiconductor material on an insulator
Assignee: Intersil Corp
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Filing: 1984-03-26
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Granted: 1986-05-20
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Expires: 2004-03-26
Abstract
Abstract Dielectrically isolated, thin single crystal films of semiconductor material suitable for integrated circuit applications and preparation thereof by solid state zone recrystallization of a polycrystalline layer of the semiconductor material are disclosed.
Inventors
- 👤 Harvey E. Cline
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:54
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2926; C; C30; C30B; C30B1/00; C30B1/02; C30B29/00; C30B29/02; C30B29/06; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; H10P14/3422; H10P14/3466; H10P14/38; H10P14/3802; H10P14/382; Y; Y10; Y10S; Y10S148/00; Y10S148/154
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
87 words
In a laminated article of manufacture comprising a dielectrically isolated film of crystalline semiconductor material supported on a substrate, said substrate and said crystalline film being separated by an amorphous dielectric layer, the improvement wherein said crystalline film is a single crystal and has a substantially uniform thickness in the range of from 100 to about 10,000 Angstroms, said thickness varying no more than ±5% from a nominal thickness, and any sub grain boundaries present in said single crystal are not aligned but are not randomly oriented.
Claim 2
Dependent Claim
87 words
In a laminated article of manufacture comprising a dielectrically isolated film of crystalline semiconductor material supported on a substrate, said substrate and said crystalline film being separated by an amorphous dielectric layer, the improvement wherein said crystalline film is a single crystal and has a substantially uniform thickness in the range of from 100 to about 10,000 Angstroms, said thickness varying no more than ±5% from a nominal thickness, and any sub grain boundaries present in said single crystal are not aligned but are not randomly oriented.
Claim 3
Dependent Claim
18 words
The improvement of claim 1 wherein the maximum thickness of the single crystal film is about 5000 Angstroms.
Claim 4
Dependent Claim
29 words
The improvement of claim 1 wherein the material of the single crystal film is silicon, the material of the dielectric layer is silicon dioxide and the substrate is silicon.
Claim 5
Dependent Claim
16 words
The improvement of claim l wherein the orientation of the single crystal film is <010> (100).
Claim 6
Dependent Claim
25 words
The improvement of claim 1 wherein the substrate is single crystal material and the substrate and the single crystal film have the same crystal orientation.
Claim 7
Dependent Claim
23 words
The improvement of claim 1 wherein the semiconductor material is selected from the group consisting of silicon, gallium arsenide, indium antimonide and germanium.
Claim 8
Dependent Claim
14 words
The improvement of claim 1 wherein the crystalline film contains low angle grain boundaries.
Claim 9
Dependent Claim
17 words
The improvement of claim 1 wherein the crystalline film is substantially free of low angle grain boundaries.
References Cited (Backward Citations)
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Cited
US4320178A
Cited
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Cited
US4447497A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-19 | 1989-11-18 | 1990-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-19 | 1993-11-18 | 1994-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-19 | 1997-11-18 | 1998-05-20 | $7700.00 | Window Closed / Lapsed |