US4442178A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SOS Substrate for semiconductor device
Assignee: Toshiba Corp
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Filing: 1982-09-24
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Granted: 1984-04-10
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Expires: 2002-09-24
Abstract
Abstract The invention provides an SOS substrate for a semiconductor device wherein an epitaxial silicon layer which has an index of plane (100) is formed on a single crystal sapphire plate which has an index of plane (1012). An orientation flat is formed at an incline angle of 2.1 to 2.2° with respect to a [011] or [011] direction on the surface of the epitaxial silicon layer which has the index of plane (100). The direction of the orientation flat on the surface of the sapphire plate is aligned with the direction of a cleavage plane of the sapphire plate.
Inventors
- 👤 Minoru Kimura
- 👤 Bunzi Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:48
CPC Classifications
B; B28; B28D; B28D5/00; B28D5/0005; B28D5/0011; H; H10; H10D; H10D86/00; H10D86/01; H10D86/03; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2926; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
80 words
An SOS substrate for a semiconductor device, comprising: a single crystal sapphire plate which has a surface with an index of plane (1012); an epitaxial silicon layer which has a surface with an index of plane (100) and which is formed on the surface of said sapphire plate; and an end face on said SOS substrate, said end face being inclined by an angle of 2.1° to 2.2° with respect to the [011] or [011] crystallographic direction of said silicon.
Claim 2
Dependent Claim
80 words
An SOS substrate for a semiconductor device, comprising: a single crystal sapphire plate which has a surface with an index of plane (1012); an epitaxial silicon layer which has a surface with an index of plane (100) and which is formed on the surface of said sapphire plate; and an end face on said SOS substrate, said end face being inclined by an angle of 2.1° to 2.2° with respect to the [011] or [011] crystallographic direction of said silicon.
Claim 3
Dependent Claim
26 words
An SOS substrate according to claim 1, wherein said SOS substrate has a disc shape, except for a portion at which said end face is formed.
References Cited (Backward Citations)
US4131496A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-04-10 | 1987-10-10 | 1988-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-04-10 | 1991-10-10 | 1992-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-04-10 | 1995-10-10 | 1996-04-10 | $7700.00 | Window Closed / Lapsed |