US5374592A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming an aluminum metal contact
Assignee: STMicroelectronics lnc USA
•
Filing: 1994-02-07
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Granted: 1994-12-20
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Expires: 2014-02-07
Abstract
Abstract A method is provided for depositing aluminum thin film layers so as to form an improved metal contact in a semiconductor integrated circuit device. An initial layer of aluminum is deposited at a very low temperature, such as room temperature, to a depth sufficient to form a continuous layer. A second aluminum layer is then deposited at increasing temperatures and lower deposition rates in order to complete the deposition of the layer.
Inventors
- 👤 Robert B. MacNaughton
- 👤 De-Dui Liao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:41
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/042; H10W20/045; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10W20/033; H10W20/056; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
151 words
A method for forming an integrated circuit contact structure, comprising the steps of: forming an insulating layer on a semiconductor device: forming an opening through the insulating layer to the semiconductor device; depositing a first aluminum layer over the insulating layer and extending into the opening, wherein the first aluminum layer is deposited at a temperature less than approximately 100° C. at a rate greater than approximately 100 Å/sec, to a thickness less than approximately 1000 Å stopping aluminum deposition, then beginning to heat the integrated circuit; and depositing a second aluminum layer over the first aluminum layer while the temperature of the integrated circuit is increasing, wherein the second aluminum layer is deposited at a temperature of between approximately 400° C. and 500° C. at a deposition rate which is low enough to allow surface migration of the deposited second aluminum layer to fill low regions in the integrated circuit.
Claim 2
Independent Claim
151 words
A method for forming an integrated circuit contact structure, comprising the steps of: forming an insulating layer on a semiconductor device: forming an opening through the insulating layer to the semiconductor device; depositing a first aluminum layer over the insulating layer and extending into the opening, wherein the first aluminum layer is deposited at a temperature less than approximately 100° C. at a rate greater than approximately 100 Å/sec, to a thickness less than approximately 1000 Å stopping aluminum deposition, then beginning to heat the integrated circuit; and depositing a second aluminum layer over the first aluminum layer while the temperature of the integrated circuit is increasing, wherein the second aluminum layer is deposited at a temperature of between approximately 400° C. and 500° C. at a deposition rate which is low enough to allow surface migration of the deposited second aluminum layer to fill low regions in the integrated circuit.
Claim 3
Dependent Claim
33 words
The method according to claim 1 further comprising the step of forming a barrier layer over the insulating layer and extending into the opening before the step of forming the first aluminum layer.
Claim 4
Dependent Claim
15 words
The method according to claim 2 wherein the barrier layer is comprised of titanium nitride.
Claim 5
Dependent Claim
17 words
The method according to claim 1, wherein the first aluminum layer is deposited at approximately room temperature.
Claim 6
Dependent Claim
18 words
The method according to claim 1, wherein the first aluminum layer is deposited at less than room temperature.
Claim 7
Dependent Claim
18 words
The method according to claim 1 wherein the thickness of the first aluminum layer is approximately 200-300 angstroms.
Claim 8
Dependent Claim
22 words
The method according to claim 1 wherein the second aluminum layer is deposited at a rate of less than approximately 60 angstroms/second.
Claim 9
Dependent Claim
55 words
The method according to claim 1, further comprising the step of: after stopping aluminum deposition and before beginning to heat the integrated circuit, moving a semiconductor wafer containing the integrated circuit from a first sputtering chamber used for depositing the first aluminum layer to a second sputtering chamber used for depositing the second aluminum wafer.
Claim 10
Dependent Claim
20 words
The method according to claim 8, wherein the first and second sputtering chambers form part of a multi-chamber sputtering machine.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-19 | 1998-06-20 | 1998-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-19 | 2002-06-20 | 2002-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-19 | 2006-06-20 | 2006-12-20 | $7700.00 | Window Closed / Lapsed |