Patent US5310446A successfully refreshed from Google Patents.
US5310446A
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US
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Method for producing semiconductor film
Assignee: Ricoh Co Ltd
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Filing: 1992-07-13
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Granted: 1994-05-10
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Expires: 2012-07-13
Abstract
Abstract A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.
Inventors
- 👤 Junichi Konishi
- 👤 Kouichi Maari
- 👤 Toshihiko Taneda
- 👤 Akiko Kishimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:06
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B11/00; C30B13/00; H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/093
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
117 words
A method for producing a semiconductor single crystal film comprising the steps of: (a) preparing a first substrate and a second substrate, wherein said first substrate having a surface at least partially comprising a semiconductor layer; (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate; (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein; (d) cooling said molten portion to crystallize said molten portion of said semiconductor layer to form a single crystal semiconductor structure therein; and (e) separating said first substrate from said second substrate.
Claim 2
Independent Claim
117 words
A method for producing a semiconductor single crystal film comprising the steps of: (a) preparing a first substrate and a second substrate, wherein said first substrate having a surface at least partially comprising a semiconductor layer; (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate; (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein; (d) cooling said molten portion to crystallize said molten portion of said semiconductor layer to form a single crystal semiconductor structure therein; and (e) separating said first substrate from said second substrate.
Claim 3
Dependent Claim
48 words
A method for producing a semiconductor single crystal film according to claim 1, wherein said second substrate comprises a plate member and an electrically insulating film formed thereon which has a stronger affinity for said single crystal formed in said molten portion than that of said first substrate.
Claim 4
Dependent Claim
28 words
A method for producing a semiconductor single crystal film according to claim 1, wherein said second substrate comprises a plate member and an amorphous silicon film formed thereon.
Claim 5
Dependent Claim
30 words
A method for producing a semiconductor single crystal film according to claim 1, wherein said first substrate has at least one protrusion at a portion corresponding to said molten portion.
Claim 6
Dependent Claim
33 words
A method for producing a semiconductor single crystal film according to claim 1, wherein a cooling means is disposed on the first substrate side while applying said energy to said assembly of substrates.
Claim 7
Dependent Claim
21 words
A method for producing a semiconductor single crystal film according to claim 1, wherein said first substrate comprises a sapphire plate.
Claim 8
Dependent Claim
29 words
A method for producing a semiconductor single crystal film according to claim 6, wherein said first substrate further comprises a single crystal silicon film formed on said sapphire plate.
Claim 9
Independent Claim
147 words
A method for producing a semiconductor single crystal film comprising the steps of: (a) preparing a first substrate and a second substrate, wherein said first substrate is essentially constituted by a single crystal and having a surface at least partially comprising a semiconductor layer; (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate; (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein; (d) cooling said molten portion so as to crystallize said molten portion of said semiconductor layer while imparting a crystal orientation of single crystal of said first substrate to said molten portion thereby to form a single crystal semiconductor structure in said molten portion; and (e) separating said first substrate from said second substrate.
Claim 10
Independent Claim
147 words
A method for producing a semiconductor single crystal film comprising the steps of: (a) preparing a first substrate and a second substrate, wherein said first substrate is essentially constituted by a single crystal and having a surface at least partially comprising a semiconductor layer; (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate; (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein; (d) cooling said molten portion so as to crystallize said molten portion of said semiconductor layer while imparting a crystal orientation of single crystal of said first substrate to said molten portion thereby to form a single crystal semiconductor structure in said molten portion; and (e) separating said first substrate from said second substrate.
Claim 11
Dependent Claim
48 words
A method for producing a semiconductor single crystal film according to claim 8, wherein said second substrate comprises a plate member and an electrically insulating film formed thereon which has a stronger affinity for said single crystal formed in said motion portion than that of said first substrate.
Claim 12
Dependent Claim
27 words
A method for producing a semiconductor single crystal film according to claim 9, wherein said second substrate further comprises an amorphous film formed on said insulating film.
Claim 13
Dependent Claim
27 words
A method for producing a semiconductor single crystal according to claim 9, wherein said second substrate further comprises a polycrystalline silicon film formed on said insulating film.
Claim 14
Dependent Claim
28 words
A method for producing a semiconductor single crystal film according to claim 8, wherein said second substrate comprises a plate member and a polycrystalline silicon film formed thereon.
Claim 15
Dependent Claim
28 words
A method for producing a semiconductor single crystal film according to claim 8, wherein said second substrate comprises a plate member and an amorphous silicon film formed thereon.
Claim 16
Dependent Claim
30 words
A method for producing a semiconductor single crystal film according to claim 8, wherein said first substrate has at least one protrusion at a portion corresponding to said molten portion.
Claim 17
Dependent Claim
24 words
A method for producing a semiconductor single crystal film according to claim 8, wherein an energy beam is used to form said molten portion.
Claim 18
Dependent Claim
33 words
A method for producing a semiconductor single crystal film according to claim 15, wherein a cooling means is disposed on the first substrate side while applying said energy to said assembly of substrates.
Claim 19
Dependent Claim
39 words
A method for producing a semiconductor single crystal according to claim 15, wherein said energy beam is irradiated to said assembly through a mask having a pattern of a single crystal film to be formed on said second substrate.
Claim 20
Dependent Claim
21 words
A method for producing a semiconductor single crystal film according to claim 8, wherein said first substrate comprises a sapphire plate.
Claim 21
Dependent Claim
29 words
A method for producing a semiconductor single crystal film according to claim 18, wherein said first substrate further comprises a single crystal silicon film formed on said sapphire plate.
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